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r5_per |
r6_pbr |
r7_yield |
r8_mratio |
r9_mvalue |
r10_taishaku |
r11_rstrength |
r12_settlement |
r13_continuity |
r14_atratio |
r15_vratio |
r16_ma5dratio |
r17_ma10dratio |
r18_ma25dratio |
r19_ma50dratio |
r20_ma75dratio |
r21_mrstrength |
r22_news |
r23_gratio |
r24_volaratio
レコード件数:994
| rdate | rtime | rcd | rname | ridx | 1dc | 1dm | 1dvm | 1dv | 1ds | 1dmax | 1dmin | 1dmed | 1dq25 | 1dq75 | 2dm | 2dvm | 2ds | 3dm | 3dvm | 3ds | 5dm | 5dvm | 5ds | sdate |
| 2025-07-14 |
16:50 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.997 |
-1.68 |
4415000 |
2.492 |
1.357 |
-6.897 |
-0.336 |
-0.924 |
0.005 |
0.149 |
2.521 |
1.011 |
0.056 |
6.366 |
0.443 |
0.47 |
22.624 |
0.657 |
|
| 2025-07-11 |
21:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.296 |
6.722 |
6016200 |
2.14 |
4.803 |
-1.463 |
1.031 |
-0.186 |
2.835 |
0.582 |
10.389 |
1.247 |
0.399 |
17.733 |
1.526 |
0.464 |
24.612 |
0.996 |
|
| 2025-07-10 |
20:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.131 |
14.056 |
6062700 |
0.958 |
1.864 |
-1.199 |
-0.069 |
-0.706 |
0.031 |
-0.05 |
23.239 |
1.527 |
0.685 |
36.026 |
1.318 |
0.157 |
31.388 |
0.782 |
|
| 2025-07-09 |
17:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.031 |
32.421 |
6206200 |
2.488 |
4.175 |
-4.472 |
0.316 |
-0.72 |
0.98 |
1.092 |
47.011 |
1.633 |
0.385 |
34.095 |
1.071 |
0.338 |
25.536 |
0.67 |
|
| 2025-07-08 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.154 |
61.601 |
10043200 |
2.587 |
7.967 |
-0.487 |
1.514 |
1.059 |
2.464 |
0.561 |
34.931 |
1.066 |
0.295 |
36.82 |
0.772 |
0.088 |
20.383 |
0.554 |
|
| 2025-07-07 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.031 |
8.262 |
3476800 |
1.462 |
0.316 |
-3.132 |
-0.181 |
-2.512 |
0.025 |
-0.634 |
24.43 |
0.685 |
-0.165 |
11.22 |
0.59 |
-0.545 |
4.153 |
0.587 |
|
| 2025-07-04 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.238 |
40.598 |
4016400 |
0.832 |
0.994 |
-1.526 |
-0.159 |
-0.886 |
0.353 |
0.269 |
12.698 |
0.808 |
-0.228 |
10.685 |
0.892 |
-0.388 |
-1.776 |
0.65 |
|
| 2025-07-03 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.775 |
-15.202 |
4832900 |
1.417 |
3.192 |
-0.645 |
0.2 |
-0.135 |
1.619 |
-0.223 |
-4.272 |
1.29 |
-0.485 |
-9.365 |
0.915 |
-0.073 |
76.706 |
0.809 |
|
| 2025-07-02 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.221 |
6.657 |
5318000 |
1.427 |
1.107 |
-2.947 |
-1.206 |
-2.271 |
-0.401 |
-1.115 |
-6.447 |
0.856 |
-0.827 |
-11.426 |
0.657 |
-0.04 |
83.118 |
0.698 |
|
| 2025-07-01 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.008 |
-19.552 |
5669300 |
0.976 |
0.84 |
-2.094 |
-1.383 |
-1.597 |
-0.613 |
-0.629 |
-20.467 |
0.555 |
0.027 |
130.692 |
0.846 |
0.233 |
85.419 |
0.984 |
|
| 2025-06-30 |
19:48 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.25 |
-21.383 |
6739100 |
0.562 |
0.585 |
-1.15 |
-0.249 |
-0.596 |
0.13 |
0.544 |
205.814 |
1.027 |
0.677 |
142.829 |
0.805 |
0.776 |
92.733 |
1.032 |
|
| 2025-06-27 |
12:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.339 |
433.011 |
10556500 |
1.955 |
3.511 |
-1.137 |
1.647 |
-0.352 |
3.029 |
1.14 |
224.935 |
1.24 |
0.808 |
156.011 |
1.391 |
0.449 |
92.281 |
1.26 |
|
| 2025-06-26 |
19:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.942 |
16.858 |
8049400 |
1.281 |
3.468 |
-0.599 |
0.696 |
0.127 |
1.488 |
0.542 |
17.51 |
1.338 |
0.93 |
17.346 |
1.223 |
0.281 |
26.094 |
1.195 |
|
| 2025-06-25 |
18:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.142 |
18.162 |
5678600 |
2.594 |
2.245 |
-5.964 |
0.672 |
0.224 |
1.484 |
0.924 |
17.589 |
1.72 |
-0.012 |
3.846 |
1.677 |
-0.148 |
16.43 |
1.374 |
|
| 2025-06-24 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.706 |
17.016 |
5327800 |
1.334 |
3.568 |
0.072 |
1.866 |
0.383 |
2.664 |
-0.089 |
-3.312 |
1.425 |
0.108 |
31.816 |
1.442 |
0.161 |
19.021 |
1.236 |
|
| 2025-06-23 |
17:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.884 |
-23.641 |
4118600 |
1.98 |
0.072 |
-5.99 |
-1.262 |
-2.212 |
-0.688 |
-0.692 |
39.216 |
1.749 |
-0.862 |
15.657 |
1.346 |
0.152 |
21.592 |
0.86 |
|
| 2025-06-20 |
16:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.501 |
102.074 |
9930500 |
2.47 |
5.604 |
-1.938 |
-0.119 |
-1.078 |
1.167 |
-0.351 |
35.306 |
1.233 |
0.328 |
33.909 |
1.407 |
0.803 |
19.355 |
0.689 |
|
| 2025-06-19 |
18:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.203 |
-31.461 |
4015400 |
1.382 |
0 |
-4.397 |
-0.736 |
-1.218 |
-0.558 |
0.241 |
-0.173 |
1.794 |
0.715 |
9.843 |
0.984 |
0.344 |
6.837 |
0.452 |
|
| 2025-06-18 |
17:13 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.686 |
31.115 |
5092700 |
2.646 |
6.148 |
-2.226 |
1.601 |
0 |
3.072 |
1.673 |
30.495 |
1.305 |
1.572 |
8.721 |
1.159 |
0.568 |
14.063 |
0.979 |
|
| 2025-06-17 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.661 |
29.874 |
5169000 |
1.889 |
5.083 |
-0.966 |
1.897 |
0.219 |
2.448 |
1.516 |
-2.475 |
2.087 |
0.413 |
11.511 |
1.377 |
0.519 |
11.14 |
1.564 |
|
| 2025-06-16 |
19:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.37 |
-34.825 |
5686000 |
2.577 |
7.456 |
-0.181 |
0.258 |
0 |
1.288 |
-0.212 |
2.329 |
1.507 |
-0.169 |
3.109 |
1.74 |
0.345 |
17.475 |
1.479 |
|
| 2025-06-13 |
18:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.793 |
39.483 |
7695500 |
1.64 |
0.376 |
-4.726 |
-1.522 |
-2.63 |
-1.035 |
-0.939 |
22.076 |
1.677 |
-0.146 |
20.217 |
1.758 |
0.08 |
20.898 |
0.959 |
|
| 2025-06-12 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.085 |
4.669 |
6437800 |
2.309 |
5.029 |
-1.612 |
-1.19 |
-1.506 |
0.341 |
0.678 |
10.584 |
2.172 |
0.716 |
27.573 |
1.652 |
0.558 |
13.528 |
1.339 |
|
| 2025-06-11 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.44 |
16.498 |
6575400 |
2.42 |
4.849 |
-2.57 |
0.966 |
0.265 |
3.154 |
1.116 |
39.025 |
1.567 |
0.759 |
20.112 |
0.83 |
0.423 |
13.183 |
0.791 |
|
| 2025-06-10 |
18:56 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.791 |
61.551 |
4598000 |
1.494 |
3.315 |
-0.917 |
0.487 |
-0.17 |
1.424 |
0.418 |
21.919 |
0.732 |
0.479 |
15.49 |
1.17 |
0.331 |
8.751 |
0.963 |
|
| 2025-06-09 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.045 |
-17.713 |
3539700 |
0.783 |
1.497 |
-1.193 |
-0.018 |
-0.367 |
0.389 |
0.322 |
-7.54 |
1.275 |
-0.039 |
-4.044 |
0.603 |
0.073 |
-0.3 |
0.546 |
|
| 2025-06-06 |
22:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.599 |
2.632 |
4349900 |
2.839 |
7.436 |
-1.32 |
-0.16 |
-0.669 |
0.213 |
-0.081 |
2.79 |
1.015 |
0.273 |
-0.027 |
1.468 |
-0.443 |
5.684 |
0.588 |
|
| 2025-06-05 |
21:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.762 |
2.948 |
5083000 |
1.797 |
1.428 |
-4.035 |
-0.44 |
-1.597 |
0.456 |
0.111 |
-1.357 |
0.92 |
-0.093 |
4.527 |
0.764 |
-0.165 |
7.398 |
0.399 |
|
| 2025-06-04 |
21:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.983 |
-5.661 |
5968700 |
2.81 |
7.684 |
-1.45 |
0.322 |
-0.156 |
0.737 |
0.241 |
5.317 |
0.935 |
-0.683 |
7.613 |
1.255 |
0.5 |
6.538 |
1.182 |
|
| 2025-06-03 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.501 |
16.295 |
5596200 |
2.232 |
2.697 |
-5.033 |
0.018 |
-1.278 |
0.344 |
-1.516 |
14.25 |
3.137 |
-0.348 |
13.235 |
0.348 |
0.508 |
18.336 |
0.641 |
|
| 2025-06-02 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-2.532 |
12.205 |
5115100 |
4.364 |
-0.179 |
-13.269 |
-1.178 |
-1.46 |
-0.713 |
-0.271 |
11.705 |
0.852 |
0.672 |
7.351 |
1.712 |
0.768 |
10.414 |
1.288 |
|
| 2025-05-30 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.989 |
11.204 |
7817700 |
5.873 |
16.413 |
-0.745 |
-0.268 |
-0.574 |
0.93 |
2.274 |
4.924 |
4.64 |
1.858 |
21.06 |
2.997 |
2.02 |
34.057 |
3.302 |
|
| 2025-05-29 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.56 |
-1.355 |
9301700 |
3.703 |
10.686 |
0.25 |
0.952 |
0.446 |
2.367 |
1.793 |
25.988 |
1.811 |
1.461 |
9.554 |
1.697 |
1.997 |
43.025 |
2.716 |
|
| 2025-05-28 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.026 |
53.332 |
8451800 |
1.191 |
3.762 |
0 |
0.88 |
0.292 |
1.06 |
0.912 |
15.009 |
0.862 |
1.851 |
53.479 |
2.508 |
1.382 |
45.47 |
2.022 |
|
| 2025-05-27 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.797 |
-23.314 |
4631100 |
1.595 |
4.532 |
-0.35 |
0.238 |
-0.035 |
0.837 |
2.263 |
53.553 |
3.918 |
2.133 |
54.382 |
3.501 |
1.041 |
29.085 |
2.235 |
|
| 2025-05-26 |
17:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
3.729 |
130.42 |
5957600 |
6.418 |
18.397 |
0 |
0.948 |
0.132 |
3.26 |
2.801 |
93.23 |
4.494 |
1.696 |
65.777 |
2.979 |
1.038 |
47.367 |
1.668 |
|
| 2025-05-23 |
17:12 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.872 |
56.041 |
9858200 |
3.124 |
8.384 |
-0.867 |
0.684 |
0.21 |
1.948 |
0.679 |
33.456 |
2.053 |
0.227 |
12.773 |
1.597 |
0.054 |
15.713 |
0.767 |
|
| 2025-05-22 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.515 |
10.871 |
6125800 |
2.416 |
2.61 |
-5.545 |
0.026 |
-1.289 |
0.561 |
-0.596 |
-8.86 |
1.555 |
-0.137 |
16.791 |
0.894 |
-0.273 |
3.033 |
0.644 |
|
| 2025-05-21 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.678 |
-28.592 |
6132700 |
1.461 |
1.277 |
-3.071 |
-0.31 |
-1.421 |
0.14 |
0.052 |
19.752 |
0.785 |
-0.363 |
3.884 |
0.548 |
-0.447 |
4.989 |
0.671 |
|
| 2025-05-20 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.782 |
68.095 |
7197600 |
2.652 |
4.654 |
-2.128 |
-0.08 |
-1.25 |
2.522 |
-0.205 |
20.122 |
1.346 |
-0.057 |
10.962 |
0.787 |
-0.183 |
12.005 |
0.804 |
|
| 2025-05-19 |
17:55 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.193 |
-27.85 |
4120800 |
0.773 |
-0.071 |
-2.182 |
-1.12 |
-1.884 |
-0.648 |
-0.477 |
-17.604 |
0.726 |
-0.779 |
-4.852 |
0.814 |
0.162 |
6.996 |
0.85 |
|
| 2025-05-16 |
12:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.24 |
-7.359 |
6337900 |
1.65 |
4.055 |
-1.559 |
-0.045 |
-0.484 |
0.199 |
-0.572 |
6.646 |
1.133 |
-0.168 |
6.593 |
1.287 |
0.739 |
29.8 |
0.989 |
|
| 2025-05-15 |
14:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.385 |
20.651 |
6535500 |
2.028 |
0.391 |
-5.935 |
-1.012 |
-1.731 |
-0.002 |
-0.372 |
13.569 |
1.695 |
0.588 |
23.396 |
1.498 |
0.983 |
36.075 |
1.147 |
|
| 2025-05-14 |
13:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.641 |
6.487 |
10395100 |
2.376 |
5.56 |
-1.645 |
-0.274 |
-0.803 |
1.326 |
1.575 |
24.768 |
1.555 |
1.613 |
45.237 |
1.424 |
1.255 |
29.486 |
0.958 |
|
| 2025-05-13 |
12:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.509 |
43.048 |
13384300 |
2.917 |
6.925 |
-1.05 |
1.427 |
0.637 |
4.893 |
2.099 |
64.611 |
2.131 |
1.886 |
51.078 |
1.494 |
1.097 |
25.543 |
0.907 |
|
| 2025-05-12 |
12:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.688 |
86.174 |
9633900 |
2.941 |
8.346 |
-1.616 |
0.968 |
0.524 |
1.961 |
1.574 |
55.094 |
1.637 |
1.042 |
32.631 |
1.071 |
0.662 |
21.56 |
0.767 |
|
| 2025-05-09 |
20:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.46 |
24.013 |
5216900 |
1.023 |
3.519 |
0.036 |
1.203 |
0.994 |
1.811 |
0.718 |
5.859 |
0.533 |
0.429 |
-0.502 |
0.757 |
0.362 |
2.106 |
0.412 |
|
| 2025-05-08 |
19:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.023 |
-12.294 |
4973200 |
0.834 |
1.244 |
-1.452 |
0.114 |
-0.428 |
0.403 |
-0.087 |
-12.759 |
0.845 |
0.053 |
-0.796 |
0.601 |
0.18 |
-4.05 |
0.589 |
|
| 2025-05-07 |
18:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.151 |
-13.225 |
6058800 |
1.497 |
2.395 |
-2.061 |
-0.171 |
-1.106 |
0.44 |
0.092 |
4.952 |
0.618 |
0.124 |
-0.397 |
0.469 |
0.219 |
8.231 |
0.56 |
|
| 2025-05-02 |
17:50 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.334 |
23.13 |
6573300 |
1.716 |
2.683 |
-2.887 |
0.211 |
-0.118 |
0.978 |
0.262 |
6.018 |
0.891 |
0.357 |
1.756 |
1.06 |
0.859 |
15.533 |
0.782 |
|
| 2025-05-01 |
12:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.189 |
-11.094 |
6913300 |
1.352 |
2.578 |
-1.794 |
0 |
-0.532 |
0.546 |
0.369 |
-8.93 |
1.265 |
0.303 |
10.416 |
0.928 |
1.131 |
16.268 |
0.931 |
|
| 2025-04-30 |
20:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.549 |
-6.766 |
7293000 |
1.606 |
3.125 |
-1.386 |
0.628 |
-0.767 |
1.523 |
0.36 |
21.171 |
0.819 |
1.257 |
21.877 |
0.875 |
1.454 |
22.666 |
0.918 |
|
| 2025-04-28 |
11:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.171 |
49.108 |
10814900 |
0.878 |
1.576 |
-0.973 |
0.016 |
-0.426 |
0.612 |
1.61 |
36.198 |
0.973 |
1.639 |
33.067 |
0.966 |
1.516 |
23.099 |
0.836 |
|
| 2025-04-25 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
3.049 |
23.287 |
7283500 |
2.271 |
6.753 |
0.036 |
2.792 |
1.507 |
4.352 |
2.373 |
25.047 |
1.575 |
2.184 |
23.662 |
1.385 |
1.046 |
21.853 |
0.857 |
|
| 2025-04-24 |
14:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.696 |
26.807 |
10730900 |
2.594 |
5.38 |
-1.93 |
1.251 |
-0.142 |
3.556 |
1.751 |
23.849 |
1.767 |
1.453 |
14.367 |
1.304 |
0.526 |
15.299 |
0.693 |
|
| 2025-04-23 |
14:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.806 |
20.892 |
5707600 |
1.53 |
4.178 |
-0.216 |
1.713 |
0.822 |
2.733 |
1.332 |
8.147 |
0.97 |
0.161 |
19.724 |
0.675 |
0.476 |
4.443 |
0.452 |
|
| 2025-04-22 |
11:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.857 |
-4.598 |
5029400 |
0.838 |
1.862 |
-0.448 |
0.777 |
0.344 |
1.653 |
-0.662 |
19.141 |
0.934 |
-0.291 |
9.598 |
0.722 |
-0.753 |
6.347 |
0.815 |
|
| 2025-04-21 |
09:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-2.18 |
42.879 |
4804700 |
2.134 |
0.107 |
-5.843 |
-2.376 |
-3.289 |
-0.085 |
-0.864 |
16.696 |
1.136 |
-0.094 |
1.974 |
0.992 |
-0.646 |
12.259 |
0.805 |
|
| 2025-04-18 |
08:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.451 |
-9.487 |
4958100 |
1.557 |
3.365 |
-1.203 |
0.458 |
-0.949 |
1.168 |
0.949 |
-18.479 |
1.262 |
-0.813 |
-2.183 |
1.21 |
0.253 |
4.606 |
0.952 |
|
| 2025-04-17 |
07:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.448 |
-27.47 |
6089000 |
2.252 |
6.278 |
-1.025 |
0.924 |
0.122 |
1.89 |
-1.446 |
1.469 |
1.691 |
-0.501 |
9.301 |
1.16 |
0.051 |
4.19 |
1.271 |
|
| 2025-04-16 |
12:55 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-4.339 |
30.409 |
6690500 |
2.671 |
0 |
-9.591 |
-4.036 |
-4.764 |
-3.714 |
-1.475 |
27.687 |
1.435 |
-0.212 |
19.996 |
1.335 |
1.516 |
7.615 |
1.48 |
|
| 2025-04-15 |
19:47 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.39 |
24.964 |
9017900 |
1.92 |
5.268 |
-0.973 |
1.008 |
0.223 |
2.198 |
1.852 |
14.789 |
2.112 |
1.049 |
6.004 |
2.366 |
1.461 |
4.87 |
1.671 |
|
| 2025-04-14 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.314 |
4.614 |
6147900 |
3.666 |
10.574 |
-0.439 |
0.887 |
0.313 |
2.558 |
0.878 |
-3.477 |
3.553 |
3.509 |
-5.766 |
2.398 |
3.071 |
-8.675 |
2.411 |
|
| 2025-04-11 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.557 |
-11.567 |
9332600 |
3.922 |
6.196 |
-5.257 |
-0.576 |
-3.643 |
1.696 |
4.107 |
-10.955 |
2.108 |
1.201 |
-1.743 |
1.443 |
0.164 |
1.745 |
1.236 |
|
| 2025-04-10 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
8.771 |
-10.343 |
13054300 |
4.553 |
15.07 |
0.036 |
8.388 |
7.179 |
11.701 |
2.08 |
3.169 |
1.461 |
4.533 |
-12.141 |
2.608 |
-1.045 |
15.371 |
0.719 |
|
| 2025-04-09 |
17:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-4.611 |
16.682 |
11997400 |
2.907 |
0.146 |
-7.806 |
-5.671 |
-6.811 |
-2.442 |
2.414 |
-13.04 |
2.8 |
-2.464 |
10.212 |
1.725 |
-3.649 |
34.514 |
1.69 |
|
| 2025-04-08 |
17:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
9.439 |
-42.761 |
13994000 |
5.559 |
17.195 |
1.292 |
9.279 |
5.146 |
13.852 |
-1.391 |
6.977 |
1.593 |
-3.128 |
23.505 |
1.48 |
-2.667 |
29.859 |
1.268 |
|
| 2025-04-07 |
18:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-12.221 |
56.714 |
20218000 |
5.582 |
-1.633 |
-18.892 |
-12.436 |
-16.372 |
-9.766 |
-9.412 |
56.639 |
4.187 |
-7.69 |
66.216 |
3.448 |
-4.685 |
32.503 |
2.202 |
|
| 2025-04-04 |
18:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-6.603 |
56.563 |
11396400 |
3.139 |
-0.253 |
-10.964 |
-6.996 |
-8.111 |
-5.876 |
-5.425 |
70.967 |
2.673 |
-3.518 |
45.114 |
1.725 |
-3.135 |
44.082 |
1.608 |
|
| 2025-04-03 |
18:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-4.248 |
85.37 |
8486400 |
2.27 |
-0.181 |
-7.84 |
-4 |
-5.548 |
-3.492 |
-1.975 |
39.389 |
1.14 |
-1.534 |
16.412 |
1.137 |
-2.16 |
32.449 |
1.222 |
|
| 2025-04-02 |
18:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.298 |
-6.592 |
5511100 |
0.948 |
1.586 |
-1.474 |
0.227 |
-0.097 |
0.962 |
-0.178 |
-18.067 |
0.717 |
-1.608 |
26.159 |
0.984 |
-1.434 |
22.734 |
0.998 |
|
| 2025-04-01 |
19:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.653 |
-29.542 |
8198500 |
1.617 |
2.472 |
-2.707 |
-0.516 |
-1.542 |
-0.204 |
-2.56 |
42.535 |
1.65 |
-2.283 |
27.822 |
1.46 |
-1.465 |
24.291 |
1.017 |
|
| 2025-03-31 |
19:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-4.468 |
114.612 |
7498500 |
2.215 |
-0.144 |
-6.881 |
-5.017 |
-5.954 |
-3.538 |
-3.098 |
56.505 |
1.746 |
-2.271 |
49.936 |
1.412 |
-1.27 |
34.682 |
0.834 |
|
| 2025-03-28 |
19:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.729 |
-1.602 |
6419800 |
1.752 |
0 |
-5.007 |
-1.447 |
-2.606 |
-0.285 |
-1.173 |
17.597 |
1.148 |
-0.735 |
12.128 |
0.805 |
-0.548 |
8.699 |
0.502 |
|
| 2025-03-27 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.618 |
36.797 |
7892600 |
1.648 |
2.178 |
-2.529 |
-0.594 |
-1.954 |
0.328 |
-0.238 |
18.993 |
0.972 |
-0.051 |
20.133 |
0.635 |
-0.25 |
11.968 |
0.261 |
|
| 2025-03-26 |
19:51 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.142 |
1.189 |
6114300 |
1.405 |
3.202 |
-0.825 |
-0.495 |
-0.723 |
0.3 |
0.232 |
11.801 |
0.765 |
-0.131 |
2.766 |
0.497 |
-0.468 |
36.847 |
0.909 |
|
| 2025-03-25 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.321 |
22.413 |
7329200 |
0.63 |
1.253 |
-0.269 |
0.054 |
-0.132 |
0.757 |
-0.268 |
3.555 |
0.805 |
-0.259 |
7.284 |
0.781 |
-0.308 |
33.954 |
1.077 |
|
| 2025-03-24 |
19:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.24 |
14.743 |
8923200 |
1.313 |
2.43 |
-1.517 |
-0.261 |
-1.318 |
0.039 |
-0.973 |
87.969 |
2.089 |
-0.334 |
54.22 |
1.489 |
0.087 |
44.451 |
0.913 |
|
| 2025-03-21 |
20:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.24 |
14.743 |
8923200 |
1.313 |
2.43 |
-1.517 |
-0.261 |
-1.318 |
0.039 |
-0.973 |
87.969 |
2.089 |
-0.334 |
54.22 |
1.489 |
0.087 |
44.451 |
0.913 |
|
| 2025-03-19 |
20:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.706 |
161.196 |
5260700 |
3.467 |
1.362 |
-9.323 |
-0.069 |
-2.694 |
0.141 |
-0.381 |
73.959 |
1.942 |
-0.12 |
49.413 |
1.401 |
-0.03 |
44.268 |
0.838 |
|
| 2025-03-18 |
20:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.945 |
-13.277 |
4021800 |
1.148 |
3.616 |
0.181 |
0.546 |
0.261 |
0.945 |
0.673 |
-6.479 |
0.839 |
0.794 |
15.439 |
0.615 |
0.342 |
7.426 |
0.531 |
|
| 2025-03-17 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.401 |
0.32 |
5166300 |
1.406 |
3.792 |
-0.572 |
0 |
-0.178 |
0.188 |
0.718 |
29.797 |
0.851 |
0.203 |
24.474 |
0.503 |
0.042 |
19.79 |
0.423 |
|
| 2025-03-14 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.035 |
59.274 |
6318600 |
1.081 |
3.298 |
0.036 |
0.87 |
0.152 |
1.398 |
0.104 |
36.55 |
0.684 |
0.122 |
16.696 |
1.018 |
0.069 |
17.504 |
0.491 |
|
| 2025-03-13 |
18:50 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.826 |
13.827 |
5002600 |
0.734 |
0.109 |
-1.96 |
-0.75 |
-1.202 |
-0.33 |
-0.334 |
-4.593 |
1.198 |
-0.408 |
13.118 |
0.669 |
-0.23 |
7.185 |
0.376 |
|
| 2025-03-12 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.157 |
-23.014 |
7298400 |
2.184 |
4.822 |
-1.991 |
-0.302 |
-1.055 |
0.5 |
-0.199 |
12.764 |
0.784 |
0.045 |
4.806 |
0.58 |
0.268 |
7.202 |
0.46 |
|
| 2025-03-11 |
23:53 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.556 |
48.541 |
9073700 |
2.012 |
3.16 |
-4.019 |
-0.482 |
-1.022 |
0 |
-0.011 |
18.716 |
1.563 |
-0.16 |
15.037 |
0.657 |
0.33 |
7.999 |
0.702 |
|
| 2025-03-10 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.534 |
-11.109 |
5145200 |
1.41 |
2.427 |
-1.961 |
0.364 |
-0.075 |
1.622 |
0.038 |
-1.715 |
0.428 |
0.579 |
3.495 |
0.555 |
0.241 |
3.598 |
0.381 |
|
| 2025-03-07 |
20:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.459 |
7.679 |
7849800 |
1.453 |
1.459 |
-3.438 |
-0.372 |
-0.779 |
0.322 |
0.601 |
10.796 |
0.923 |
0.557 |
0.854 |
0.876 |
0.125 |
0.449 |
0.412 |
|
| 2025-03-06 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.661 |
13.914 |
5139800 |
2.25 |
5.437 |
-1.496 |
1.211 |
0.23 |
3.117 |
1.065 |
-2.558 |
1.451 |
0.377 |
7.139 |
0.835 |
-0.329 |
9.113 |
0.707 |
|
| 2025-03-05 |
17:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.469 |
-19.03 |
5305100 |
1.149 |
1.991 |
-1.535 |
0.575 |
-0.163 |
1.248 |
-0.266 |
3.752 |
0.783 |
-0.193 |
-6.45 |
0.355 |
-0.462 |
5.235 |
0.425 |
|
| 2025-03-04 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.001 |
26.534 |
7728000 |
1.473 |
0.816 |
-3.333 |
-0.404 |
-2.31 |
-0.036 |
-0.524 |
-0.16 |
0.411 |
-1.258 |
16.894 |
0.643 |
-0.815 |
6.783 |
0.707 |
|
| 2025-03-03 |
19:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.047 |
-26.854 |
4847600 |
1.036 |
1.32 |
-1.637 |
0.127 |
-0.732 |
0.706 |
-1.386 |
12.074 |
1.052 |
-0.593 |
6.223 |
0.9 |
-0.755 |
4.528 |
0.775 |
|
| 2025-02-28 |
21:51 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-2.726 |
51.003 |
8408400 |
1.637 |
-0.253 |
-4.359 |
-3.274 |
-4.133 |
-1.215 |
-0.866 |
22.761 |
1.091 |
-1.01 |
11.411 |
1.207 |
-1.076 |
12.385 |
0.912 |
|
| 2025-02-27 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.993 |
-5.48 |
6891000 |
1.448 |
3.596 |
-0.714 |
0.58 |
-0.031 |
1.955 |
-0.152 |
-8.385 |
1.55 |
-0.334 |
-0.503 |
0.813 |
-0.725 |
6.869 |
0.627 |
|
| 2025-02-26 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.296 |
-11.29 |
5955800 |
2.12 |
1.062 |
-5.891 |
-0.621 |
-1.568 |
-0.382 |
-0.998 |
1.985 |
0.922 |
-1.215 |
5.468 |
1.025 |
-0.754 |
8.859 |
0.705 |
|
| 2025-02-25 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.699 |
15.261 |
7273400 |
1.927 |
2.318 |
-3.364 |
-0.706 |
-1.882 |
0.392 |
-1.174 |
13.846 |
1.136 |
-1.107 |
17.038 |
0.877 |
-0.608 |
19.782 |
0.678 |
|
| 2025-02-21 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.65 |
12.432 |
5587900 |
1.766 |
0.281 |
-5.132 |
-1.506 |
-2.336 |
-0.254 |
-1.311 |
17.927 |
0.628 |
-0.591 |
13.441 |
0.697 |
-0.562 |
10.616 |
0.532 |
|
| 2025-02-20 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.972 |
23.423 |
5153200 |
1.484 |
1.791 |
-3.107 |
-1.326 |
-1.654 |
-0.14 |
-0.061 |
13.946 |
1.126 |
-0.231 |
23.739 |
0.777 |
-0.643 |
11.575 |
0.654 |
|
| 2025-02-19 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.849 |
4.468 |
4331300 |
1.385 |
2.996 |
-1.46 |
0.718 |
0.152 |
1.807 |
0.14 |
23.897 |
1.175 |
-0.063 |
5.743 |
0.68 |
-0.311 |
6.578 |
0.767 |
|
| 2025-02-18 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.569 |
43.326 |
4324100 |
1.954 |
1.268 |
-5.158 |
0 |
-0.306 |
0.179 |
-0.519 |
6.38 |
0.936 |
-1.03 |
9.995 |
1.3 |
-0.142 |
19.111 |
0.716 |
|
| 2025-02-17 |
21:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.47 |
-30.566 |
4629000 |
1.016 |
1.077 |
-2.095 |
-0.205 |
-1.266 |
0.1 |
-1.261 |
-6.671 |
1.094 |
-0.611 |
-4.968 |
0.653 |
-0.034 |
8.943 |
0.549 |
|
| 2025-02-14 |
17:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-2.052 |
17.225 |
6031700 |
2.197 |
0 |
-7.19 |
-1.554 |
-2.024 |
-1.217 |
-0.682 |
7.831 |
1.011 |
0.11 |
27.598 |
0.67 |
-0.201 |
22.456 |
0.91 |
|
| 2025-02-13 |
23:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.688 |
-1.564 |
5484500 |
1.217 |
2.327 |
-1.383 |
1.094 |
-0.042 |
1.383 |
1.191 |
32.784 |
1.057 |
0.784 |
19.352 |
0.809 |
0.431 |
17.276 |
0.939 |
|
| 2025-02-12 |
19:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.694 |
67.132 |
7514600 |
2.607 |
5.779 |
-0.962 |
0.536 |
-0.148 |
4.119 |
0.831 |
29.81 |
1.363 |
0.12 |
32.206 |
1.609 |
0.316 |
13.866 |
1.034 |
|
| 2025-02-10 |
19:39 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.032 |
-7.512 |
5886100 |
0.581 |
0.681 |
-0.958 |
0.114 |
-0.286 |
0.321 |
-0.668 |
14.743 |
1.563 |
-0.076 |
6.937 |
1.038 |
0.348 |
-1.539 |
0.789 |
|
| 2025-02-07 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.304 |
36.998 |
7981600 |
2.954 |
1.752 |
-8.036 |
-1.199 |
-1.283 |
0.237 |
-0.098 |
14.162 |
1.351 |
-0.027 |
3.238 |
1.135 |
-0.326 |
13.407 |
0.666 |
|
| 2025-02-06 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.108 |
-8.674 |
7584700 |
1.916 |
3.453 |
-2.185 |
0.818 |
0.101 |
2.671 |
0.611 |
-13.643 |
1.334 |
1.026 |
-12.393 |
1.183 |
-0.107 |
5.824 |
0.584 |
|
| 2025-02-05 |
12:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.639 |
-79.225 |
4148800 |
1.209 |
1.837 |
-1.839 |
0.831 |
0.163 |
1.505 |
1.247 |
-44.559 |
1.634 |
-0.303 |
-7.302 |
0.986 |
-0.129 |
-6.096 |
0.966 |
|
| 2025-02-04 |
20:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.856 |
-9.894 |
14761600 |
3.032 |
8.043 |
-2.216 |
1.601 |
0.205 |
2.684 |
-0.774 |
28.66 |
1.175 |
-0.585 |
18.801 |
1.281 |
-0.402 |
19.273 |
1.454 |
|
| 2025-02-03 |
22:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-3.404 |
67.214 |
9681700 |
2.128 |
-0.036 |
-6.027 |
-3.867 |
-5.018 |
-1.955 |
-1.806 |
33.149 |
1.17 |
-1.046 |
19.546 |
0.973 |
-1.135 |
16.492 |
1.039 |
|
| 2025-01-31 |
21:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.207 |
-0.916 |
6436600 |
1.888 |
3.006 |
-2.638 |
0.109 |
-1.504 |
0.636 |
0.133 |
-4.288 |
1.55 |
-0.154 |
13.015 |
1.854 |
-0.664 |
24.345 |
1.151 |
|
| 2025-01-30 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.473 |
-7.659 |
5697800 |
1.836 |
3.879 |
-2.199 |
0.1 |
-0.156 |
0.775 |
-0.127 |
19.98 |
2.543 |
-0.688 |
5.388 |
1.714 |
-0.595 |
22.861 |
1.297 |
|
| 2025-01-29 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.727 |
47.62 |
8365200 |
3.842 |
2.807 |
-9.788 |
0.161 |
-0.67 |
1.15 |
-1.268 |
11.911 |
2.074 |
-1.196 |
43.434 |
2.409 |
-0.696 |
22.144 |
1.422 |
|
| 2025-01-28 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.81 |
-23.798 |
11932800 |
2.017 |
-0.13 |
-5.829 |
-1.032 |
-2.746 |
-0.251 |
-1.43 |
41.341 |
3.278 |
-0.907 |
24.781 |
2.341 |
0.005 |
34.687 |
0.742 |
|
| 2025-01-27 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.051 |
106.479 |
9807600 |
6.227 |
9.262 |
-12.423 |
0.413 |
-3.504 |
1.064 |
-0.456 |
49.07 |
3.295 |
-0.314 |
28.965 |
2.107 |
0.431 |
34.805 |
1.114 |
|
| 2025-01-24 |
20:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.139 |
-8.338 |
7160000 |
1.119 |
2.061 |
-1.276 |
-0.254 |
-0.609 |
1.001 |
0.054 |
-9.792 |
0.838 |
0.961 |
30.251 |
1.466 |
0.934 |
15.947 |
0.997 |
|
| 2025-01-23 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.032 |
-11.245 |
12057700 |
2.187 |
5.124 |
-1.908 |
-0.424 |
-1.029 |
-0.152 |
1.372 |
49.546 |
2.533 |
1.022 |
25.294 |
1.503 |
1.181 |
19.498 |
1.11 |
|
| 2025-01-22 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.775 |
110.336 |
10473500 |
3.818 |
10.147 |
-1.019 |
1.579 |
0.48 |
3.491 |
1.549 |
43.563 |
1.544 |
1.52 |
33.106 |
1.617 |
1.295 |
26.924 |
1.121 |
|
| 2025-01-21 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.322 |
-23.209 |
4441900 |
1.33 |
2.083 |
-2.347 |
0.112 |
0.027 |
1.287 |
0.893 |
-5.509 |
1.119 |
1.054 |
-0.534 |
1.124 |
0.595 |
4.038 |
0.693 |
|
| 2025-01-20 |
17:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.463 |
12.192 |
5045200 |
2.173 |
5.502 |
-1.191 |
1.223 |
-0.087 |
2.066 |
1.42 |
10.803 |
1.719 |
1.127 |
15.832 |
1.374 |
0.335 |
17.028 |
0.722 |
|
| 2025-01-17 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.376 |
9.414 |
6137700 |
2.605 |
6.517 |
-0.866 |
0.434 |
-0.627 |
2.661 |
0.958 |
17.651 |
1.729 |
0.396 |
10.403 |
0.821 |
0.051 |
8.861 |
0.772 |
|
| 2025-01-16 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.541 |
25.888 |
6804000 |
1.317 |
2.253 |
-1.073 |
0.282 |
-0.428 |
1.714 |
-0.094 |
10.897 |
0.694 |
-0.389 |
21.178 |
0.888 |
-0.624 |
8.797 |
0.747 |
|
| 2025-01-15 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.729 |
-4.093 |
6619900 |
2.075 |
2.24 |
-4.373 |
-0.395 |
-1.619 |
0.252 |
-0.853 |
18.823 |
1.381 |
-0.554 |
3.001 |
0.991 |
-0.829 |
-2.882 |
1.045 |
|
| 2025-01-14 |
11:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.977 |
41.739 |
7847600 |
2.109 |
3.148 |
-3.156 |
-1.459 |
-2.461 |
0.044 |
-0.467 |
6.548 |
1.436 |
-0.978 |
7.396 |
1.11 |
0.145 |
133.995 |
1.883 |
|
| 2025-01-10 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.044 |
-28.643 |
5034900 |
1.016 |
1.512 |
-1.408 |
-0.051 |
-0.506 |
0.65 |
-0.978 |
-9.775 |
0.75 |
-0.814 |
-17.352 |
0.915 |
-0.128 |
133.335 |
1.712 |
|
| 2025-01-09 |
21:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.999 |
9.092 |
5514400 |
1.425 |
0.254 |
-4.135 |
-1.965 |
-2.596 |
-1.195 |
-1.242 |
-11.707 |
1.233 |
0.553 |
218.959 |
2.788 |
-0.11 |
139.434 |
1.593 |
|
| 2025-01-08 |
20:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.486 |
-32.506 |
7813900 |
1.531 |
2.364 |
-2.377 |
-0.886 |
-1.493 |
0.429 |
1.83 |
323.892 |
3.702 |
0.439 |
228.741 |
2.495 |
0.74 |
137.579 |
1.594 |
|
| 2025-01-07 |
19:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
4.145 |
680.291 |
18798600 |
6.959 |
20.985 |
-0.302 |
1.91 |
0.78 |
3.136 |
0.902 |
359.365 |
3.541 |
0.645 |
240.195 |
2.321 |
0.972 |
149.367 |
1.681 |
|
| 2025-01-06 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-2.342 |
38.439 |
5936100 |
2.434 |
2.061 |
-6.17 |
-2.42 |
-3.694 |
-1.19 |
-1.104 |
20.147 |
1.84 |
0.013 |
13.37 |
1.7 |
0.364 |
15.908 |
1.138 |
|
| 2024-12-30 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.133 |
1.854 |
3857400 |
1.806 |
4.158 |
-1.523 |
-0.304 |
-1.079 |
0.559 |
1.19 |
0.836 |
1.681 |
1.018 |
9.369 |
1.44 |
0.571 |
3.227 |
0.794 |
|
| 2024-12-27 |
18:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.248 |
-0.183 |
4756500 |
1.895 |
5.82 |
-0.395 |
1.874 |
1.186 |
3.184 |
1.461 |
13.126 |
1.431 |
1.342 |
13.083 |
0.884 |
0.917 |
-1.326 |
0.676 |
|
| 2024-12-26 |
22:53 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.674 |
26.435 |
4579300 |
1.775 |
3.391 |
-1.702 |
0.108 |
-0.25 |
1.548 |
0.889 |
19.716 |
0.863 |
0.158 |
4.821 |
0.897 |
0.482 |
7.109 |
1.098 |
|
| 2024-12-25 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.104 |
12.997 |
3990800 |
1.551 |
4.087 |
-1.014 |
1.09 |
0.453 |
1.654 |
-0.1 |
-5.987 |
1.055 |
0.555 |
-10.961 |
1.024 |
0.28 |
9.071 |
1.59 |
|
| 2024-12-24 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.303 |
-24.97 |
3300200 |
2.069 |
0.981 |
-5.564 |
-0.964 |
-1.86 |
-0.137 |
0.28 |
-22.939 |
1.035 |
0.21 |
-1.296 |
1.763 |
0.457 |
6.898 |
1.03 |
|
| 2024-12-23 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.863 |
-20.908 |
4633400 |
3.863 |
10.636 |
-0.801 |
0.229 |
-0.256 |
2.008 |
0.967 |
10.542 |
3.469 |
0.534 |
19.11 |
2.724 |
0.782 |
19.022 |
1.59 |
|
| 2024-12-20 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.071 |
41.991 |
7918600 |
3.313 |
7.106 |
-4.252 |
-0.351 |
-1.459 |
0.357 |
-0.131 |
39.119 |
2.647 |
0.576 |
26.789 |
1.229 |
0.769 |
24.441 |
1.55 |
|
| 2024-12-19 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.332 |
36.246 |
7047800 |
3.666 |
5.249 |
-5.631 |
-1.291 |
-1.915 |
0.82 |
0.828 |
19.188 |
1.628 |
0.66 |
24.676 |
1.674 |
0.675 |
14.997 |
1.487 |
|
| 2024-12-18 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.989 |
2.129 |
4841300 |
4.132 |
11.875 |
-0.707 |
0.517 |
-0.129 |
1.727 |
1.156 |
18.891 |
2.036 |
1.369 |
14.656 |
2.315 |
0.702 |
12.499 |
1.251 |
|
| 2024-12-17 |
17:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.322 |
35.652 |
6303500 |
2.326 |
4.044 |
-1.529 |
-0.803 |
-1.124 |
0.998 |
1.059 |
20.919 |
2.209 |
0.572 |
12.204 |
1.46 |
0.346 |
11.311 |
0.826 |
|
| 2024-12-16 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.797 |
6.186 |
4307800 |
3.35 |
6.923 |
-1.922 |
0.36 |
-0.637 |
4.753 |
0.697 |
0.48 |
1.539 |
0.4 |
8.237 |
0.892 |
0.157 |
10.722 |
0.514 |
|
| 2024-12-13 |
20:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.403 |
-5.226 |
6466500 |
1.701 |
1.995 |
-2.781 |
-0.755 |
-1.271 |
0.937 |
-0.299 |
9.263 |
1.221 |
-0.13 |
4.906 |
0.746 |
-0.183 |
13.791 |
0.765 |
|
| 2024-12-12 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.195 |
23.752 |
7581100 |
1.048 |
1.211 |
-1.65 |
-0.324 |
-0.91 |
0.635 |
0.007 |
9.973 |
0.974 |
-0.203 |
17.55 |
1.002 |
-0.214 |
11.901 |
0.684 |
|
| 2024-12-11 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.209 |
-3.806 |
5520100 |
1.643 |
3.422 |
-2.057 |
0.022 |
-0.51 |
0.757 |
-0.207 |
14.449 |
1.218 |
-0.105 |
16.81 |
0.729 |
0.091 |
9.03 |
1.064 |
|
| 2024-12-10 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.623 |
32.704 |
5075200 |
2.927 |
1.935 |
-7.394 |
0 |
-0.607 |
0.823 |
-0.262 |
27.118 |
1.295 |
-0.362 |
13.186 |
1.02 |
-0.133 |
16.649 |
1.153 |
|
| 2024-12-09 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.098 |
21.532 |
7397300 |
1.012 |
1.737 |
-1.587 |
0.005 |
-0.402 |
0.57 |
-0.231 |
3.427 |
0.827 |
0.29 |
5.418 |
1.248 |
0.178 |
15.352 |
0.707 |
|
| 2024-12-06 |
12:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.56 |
-14.677 |
8610900 |
1.487 |
0.478 |
-3.965 |
-0.034 |
-0.681 |
0.334 |
0.386 |
-2.639 |
2.222 |
-0.047 |
9.669 |
1.488 |
0.226 |
17.602 |
0.8 |
|
| 2024-12-05 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.331 |
9.4 |
8947700 |
4.061 |
10.973 |
-1.701 |
-0.066 |
-0.553 |
0.843 |
0.21 |
21.843 |
2.069 |
0.45 |
23.302 |
1.291 |
0.265 |
14.462 |
0.802 |
|
| 2024-12-04 |
19:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.912 |
34.286 |
7034200 |
1.429 |
2.42 |
-1.907 |
-1.255 |
-1.835 |
-0.844 |
0.01 |
30.253 |
0.748 |
0.12 |
31.096 |
0.859 |
0.161 |
7.548 |
0.543 |
|
| 2024-12-03 |
17:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.932 |
26.22 |
7327600 |
0.867 |
2.136 |
-0.175 |
0.752 |
0.314 |
1.572 |
0.636 |
29.501 |
1.162 |
0.303 |
9.542 |
0.781 |
0.056 |
2.503 |
0.625 |
|
| 2024-12-02 |
20:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.34 |
32.782 |
5524200 |
1.54 |
2.587 |
-1.499 |
0.26 |
-0.977 |
1.369 |
-0.012 |
1.203 |
0.781 |
0.262 |
-7.588 |
0.685 |
-0.567 |
-4.13 |
0.649 |
|
| 2024-11-29 |
20:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.363 |
-30.376 |
4604400 |
0.659 |
0.593 |
-1.167 |
-0.43 |
-0.88 |
0.149 |
0.223 |
-27.773 |
0.694 |
-0.331 |
-15.496 |
0.639 |
-0.69 |
2.814 |
0.427 |
|
| 2024-11-28 |
20:54 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.809 |
-25.169 |
6867500 |
1.224 |
2.641 |
-1.022 |
0.692 |
0.014 |
1.474 |
-0.315 |
-8.056 |
1.041 |
-0.938 |
-7.685 |
0.854 |
-0.593 |
12.124 |
0.554 |
|
| 2024-11-27 |
17:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.438 |
9.058 |
9424400 |
1.293 |
0.543 |
-3.272 |
-1.47 |
-2.184 |
-0.914 |
-1.811 |
1.057 |
1.16 |
-1.299 |
23.206 |
0.717 |
-0.572 |
21.92 |
0.714 |
|
| 2024-11-26 |
16:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-2.184 |
-6.944 |
9190600 |
1.882 |
0.383 |
-5.116 |
-2.218 |
-3.08 |
-0.718 |
-1.23 |
30.28 |
0.946 |
-0.778 |
25.577 |
0.875 |
-0.158 |
25.235 |
0.87 |
|
| 2024-11-25 |
10:45 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.276 |
67.504 |
30528700 |
0.774 |
0.809 |
-1.377 |
-0.216 |
-0.708 |
0.25 |
-0.075 |
41.838 |
0.758 |
0.254 |
35.829 |
0.849 |
0.478 |
30.744 |
0.653 |
|
| 2024-11-22 |
22:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.125 |
16.172 |
10605000 |
1.41 |
1.709 |
-2.57 |
0.616 |
-0.785 |
1.048 |
0.519 |
19.992 |
1.312 |
0.556 |
21.872 |
1.114 |
0.405 |
14.9 |
0.887 |
|
| 2024-11-21 |
17:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.913 |
23.812 |
11433300 |
1.793 |
3.467 |
-2.273 |
1.162 |
0.104 |
1.763 |
0.771 |
24.722 |
1.275 |
0.847 |
23.348 |
0.924 |
0.221 |
7.626 |
1.108 |
|
| 2024-11-20 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.63 |
25.632 |
8024800 |
1.188 |
2.174 |
-1.645 |
0.732 |
0.132 |
1.28 |
0.814 |
23.116 |
0.619 |
0.329 |
11.506 |
0.793 |
-0.167 |
14.56 |
1.458 |
|
| 2024-11-19 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.999 |
20.6 |
8081400 |
1.156 |
2.69 |
-0.822 |
0.925 |
0.4 |
1.616 |
0.179 |
4.442 |
0.916 |
-0.146 |
-3.771 |
1.425 |
-0.494 |
9.917 |
1.552 |
|
| 2024-11-18 |
17:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.642 |
-11.715 |
7715600 |
1.427 |
1.445 |
-2.369 |
-0.518 |
-1.974 |
0.261 |
-0.719 |
-15.957 |
1.772 |
-0.82 |
8.856 |
2.052 |
-0.873 |
8.281 |
1.325 |
|
| 2024-11-15 |
19:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.796 |
-20.199 |
10810900 |
3.527 |
3.266 |
-8.846 |
-0.088 |
-0.841 |
0.454 |
-0.91 |
19.142 |
2.945 |
-0.942 |
13.567 |
2.234 |
-0.993 |
16.169 |
1.849 |
|
| 2024-11-14 |
17:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.023 |
58.482 |
13916700 |
4.162 |
6.529 |
-6.191 |
-1.61 |
-3.365 |
1.21 |
-1.015 |
30.449 |
2.453 |
-0.975 |
24.44 |
1.805 |
-0.999 |
16.824 |
1.981 |
|
| 2024-11-13 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.008 |
2.417 |
7952400 |
1.043 |
0.704 |
-2.755 |
-1.117 |
-1.483 |
-0.502 |
-0.951 |
7.419 |
1.023 |
-1.049 |
14.188 |
2.194 |
-0.774 |
10.773 |
1.333 |
|
| 2024-11-12 |
17:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.895 |
12.42 |
10571200 |
1.963 |
2.398 |
-3.605 |
-0.901 |
-1.727 |
-0.165 |
-1.07 |
20.073 |
3.13 |
-0.987 |
7.74 |
2.364 |
-0.293 |
10.304 |
1.366 |
|
| 2024-11-11 |
17:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.245 |
27.726 |
13210900 |
5.063 |
3.803 |
-12.796 |
0.364 |
-2.083 |
1.18 |
-1.034 |
5.4 |
2.853 |
-0.656 |
13.008 |
1.653 |
0.274 |
12.346 |
1.457 |
|
| 2024-11-08 |
17:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.822 |
-16.926 |
6868100 |
1.364 |
1.397 |
-2.387 |
-1.072 |
-1.784 |
-0.077 |
-0.361 |
5.65 |
0.826 |
0.225 |
3.792 |
0.794 |
-0.039 |
9.139 |
0.961 |
|
| 2024-11-07 |
17:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.1 |
28.225 |
8901100 |
1.664 |
1.914 |
-3.385 |
0.103 |
-0.243 |
1.334 |
0.749 |
14.15 |
1.037 |
1.146 |
16.977 |
1.162 |
0.203 |
8.001 |
0.802 |
|
| 2024-11-06 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.398 |
0.075 |
9163900 |
1.656 |
3.664 |
-1.27 |
1.67 |
0.518 |
2.354 |
1.67 |
11.353 |
2.349 |
0.177 |
11.466 |
1.749 |
0.571 |
29.306 |
0.969 |
|
| 2024-11-05 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.942 |
22.631 |
12635000 |
3.822 |
10.592 |
-1.891 |
1.054 |
0.4 |
2.15 |
-0.434 |
17.161 |
2.388 |
-0.161 |
3.901 |
1.593 |
0.395 |
26.345 |
0.907 |
|
| 2024-11-01 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-2.81 |
11.691 |
5298200 |
2.473 |
0.887 |
-6.156 |
-2.103 |
-4.953 |
-1.43 |
-1.213 |
-5.464 |
1.284 |
-0.161 |
41.275 |
0.672 |
0.61 |
20.587 |
0.538 |
|
| 2024-10-31 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.385 |
-22.618 |
5307000 |
0.95 |
1.794 |
-1.216 |
0.42 |
-0.23 |
0.993 |
1.164 |
56.067 |
0.843 |
0.948 |
32.467 |
0.658 |
0.635 |
26.716 |
0.632 |
|
| 2024-10-30 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.942 |
134.752 |
13759100 |
1.863 |
5.714 |
-0.304 |
1.808 |
1.1 |
2.326 |
1.229 |
60.01 |
1.226 |
1.826 |
37.954 |
1.168 |
0.221 |
37.551 |
1.075 |
|
| 2024-10-29 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.517 |
-14.731 |
3867100 |
1.586 |
2.177 |
-2.68 |
0.874 |
-0.226 |
1.557 |
1.767 |
-10.445 |
1.148 |
0.283 |
7.149 |
0.981 |
-0.522 |
8.361 |
0.912 |
|
| 2024-10-28 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
3.018 |
-6.158 |
4505500 |
1.483 |
4.901 |
0.961 |
2.858 |
1.856 |
4.343 |
0.167 |
18.09 |
1.344 |
-0.451 |
22.578 |
1.278 |
-0.916 |
21.447 |
1.128 |
|
| 2024-10-25 |
12:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-2.823 |
-58.108 |
1930100 |
4.04 |
0.842 |
-11.413 |
-1.303 |
-3.23 |
-0.506 |
-2.255 |
-13.277 |
2.301 |
-2.094 |
-12.584 |
1.62 |
-1.225 |
5.866 |
1.2 |
|
| 2024-10-24 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.687 |
31.553 |
4311800 |
2.601 |
0.302 |
-7.454 |
-0.642 |
-1.58 |
-0.378 |
-1.73 |
10.178 |
1.405 |
-1.638 |
23.685 |
1.264 |
-0.799 |
14.831 |
0.608 |
|
| 2024-10-23 |
22:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.772 |
-11.197 |
3966000 |
2.178 |
1.043 |
-4.885 |
-1.002 |
-3.503 |
-0.422 |
-1.614 |
19.75 |
2.111 |
-0.539 |
18.628 |
1.08 |
-0.533 |
2.564 |
1.316 |
|
| 2024-10-22 |
21:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.456 |
50.697 |
4540400 |
2.603 |
3.477 |
-4.827 |
-1.546 |
-3.164 |
-0.201 |
0.078 |
33.54 |
1.592 |
-0.179 |
17.934 |
1.179 |
-0.308 |
8.434 |
1.092 |
|
| 2024-10-21 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.612 |
16.383 |
4296700 |
2.863 |
6.878 |
-1.829 |
0.878 |
0.18 |
2.118 |
0.46 |
1.552 |
1.147 |
0.187 |
-8.894 |
1.295 |
0.105 |
15.262 |
1.146 |
|
| 2024-10-18 |
22:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.692 |
-13.28 |
4452500 |
1.948 |
2.593 |
-4 |
-0.623 |
-1.658 |
0.095 |
-0.525 |
-21.532 |
1.913 |
-0.566 |
-8.303 |
1.343 |
-0.297 |
11.023 |
0.982 |
|
| 2024-10-17 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.358 |
-29.784 |
4711500 |
2.206 |
3.846 |
-3.611 |
-0.684 |
-1.293 |
0.404 |
-0.502 |
-5.815 |
1.909 |
-0.131 |
24.402 |
1.315 |
-0.151 |
12.92 |
0.803 |
|
| 2024-10-16 |
18:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.646 |
18.155 |
7369900 |
4.082 |
7.517 |
-6.587 |
-0.66 |
-2.391 |
0.301 |
-0.017 |
51.494 |
2.257 |
-0.145 |
32.726 |
1.656 |
0.002 |
18.792 |
1.02 |
|
| 2024-10-15 |
17:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.612 |
84.834 |
6943300 |
2.36 |
5.612 |
-2.881 |
0.267 |
-0.124 |
0.845 |
0.105 |
40.011 |
1.173 |
0.083 |
25.411 |
0.818 |
-0.045 |
14.585 |
0.654 |
|
| 2024-10-11 |
16:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.401 |
-4.811 |
6372500 |
1.105 |
1.166 |
-1.959 |
-0.15 |
-1.357 |
0.328 |
-0.181 |
-4.301 |
0.435 |
0.015 |
-3.01 |
0.348 |
0.128 |
8.311 |
0.407 |
|
| 2024-10-10 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.039 |
-3.791 |
6623700 |
1.815 |
2.598 |
-2.251 |
-0.045 |
-1.434 |
1.054 |
0.223 |
-2.109 |
0.752 |
-0.145 |
-2.367 |
0.512 |
0.283 |
5.879 |
0.459 |
|
| 2024-10-09 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.406 |
-0.428 |
6477400 |
1.078 |
1.988 |
-1.174 |
0.474 |
-0.106 |
0.971 |
-0.237 |
-1.654 |
1.028 |
0.333 |
16.719 |
0.622 |
0.651 |
9.539 |
0.521 |
|
| 2024-10-08 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.88 |
-2.881 |
7013200 |
1.207 |
1.423 |
-2.193 |
-1.34 |
-1.635 |
-0.41 |
0.297 |
25.293 |
1.053 |
0.324 |
11.205 |
0.689 |
0.287 |
15.668 |
0.66 |
|
| 2024-10-07 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.473 |
53.466 |
10386600 |
2.113 |
4.146 |
-0.606 |
0.536 |
-0.195 |
3.736 |
0.925 |
18.248 |
1.108 |
1.243 |
17.001 |
1.211 |
0.778 |
8.596 |
0.82 |
|
| 2024-10-04 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.378 |
-16.97 |
5736800 |
0.948 |
1.85 |
-1.259 |
0.383 |
-0.074 |
0.863 |
1.128 |
-1.232 |
1.592 |
0.281 |
9.252 |
1.068 |
-0.359 |
4.565 |
0.841 |
|
| 2024-10-03 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.877 |
14.507 |
8330100 |
3.346 |
7.843 |
-1.566 |
1.011 |
-0.704 |
3.558 |
0.233 |
22.364 |
1.571 |
0.68 |
2.162 |
1.102 |
0.035 |
18.202 |
1.118 |
|
| 2024-10-02 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.412 |
30.22 |
6544000 |
1.622 |
1.393 |
-3.741 |
-1.191 |
-2.169 |
-0.786 |
0.082 |
-4.011 |
0.833 |
-1.351 |
8.429 |
0.931 |
-0.01 |
21.935 |
0.784 |
|
| 2024-10-01 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.576 |
-38.242 |
6824200 |
1.071 |
2.99 |
0.118 |
1.776 |
0.651 |
2.319 |
-1.32 |
-2.466 |
1.238 |
-0.097 |
15.427 |
1.38 |
0.436 |
16.097 |
0.88 |
|
| 2024-09-30 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-4.217 |
33.31 |
12442400 |
2.529 |
0.16 |
-6.676 |
-5.447 |
-6.073 |
-2.129 |
-0.934 |
42.262 |
1.873 |
-0.072 |
39.232 |
1.178 |
-0.019 |
16.69 |
0.786 |
|
| 2024-09-27 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.349 |
51.214 |
10847600 |
2.428 |
6.125 |
-0.069 |
1.44 |
0.934 |
3.232 |
2 |
42.193 |
1.052 |
1.607 |
28.473 |
0.851 |
0.975 |
16.213 |
0.526 |
|
| 2024-09-26 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.652 |
33.172 |
5873200 |
1.638 |
4.252 |
-1.404 |
1.715 |
1.024 |
2.416 |
1.236 |
17.102 |
0.459 |
0.591 |
-0.358 |
0.672 |
1.113 |
18.902 |
0.436 |
|
| 2024-09-25 |
17:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.82 |
1.032 |
4533100 |
1.348 |
2.89 |
-1.016 |
0.883 |
0.133 |
1.454 |
0.061 |
-17.122 |
0.583 |
0.292 |
-1.106 |
0.8 |
0.906 |
6.969 |
0.538 |
|
| 2024-09-24 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.699 |
-35.277 |
5488000 |
1.7 |
1.215 |
-4.42 |
-0.332 |
-0.988 |
0.188 |
0.028 |
-2.176 |
0.88 |
1.031 |
20.101 |
0.775 |
0.759 |
17.406 |
0.52 |
|
| 2024-09-20 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.755 |
30.925 |
8552000 |
2.232 |
4.265 |
-1.376 |
-0.007 |
-0.874 |
1.949 |
1.896 |
47.79 |
1.8 |
1.47 |
23.03 |
1.052 |
0.604 |
20.693 |
0.653 |
|
| 2024-09-19 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
3.038 |
64.655 |
5402300 |
2.324 |
7.231 |
1.219 |
2.102 |
1.631 |
3.372 |
1.828 |
19.083 |
0.932 |
1.247 |
30.46 |
0.817 |
1.018 |
21.677 |
1.095 |
|
| 2024-09-18 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.619 |
-26.49 |
4385000 |
0.962 |
2.17 |
-1.045 |
0.603 |
0.13 |
1.111 |
0.351 |
13.362 |
0.828 |
-0.257 |
2.627 |
0.91 |
0.096 |
11.799 |
0.871 |
|
| 2024-09-17 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.084 |
53.213 |
8234000 |
1.226 |
1.987 |
-1.973 |
-0.195 |
-0.415 |
0.992 |
-0.694 |
17.186 |
1.056 |
0.478 |
23.406 |
1.366 |
0.047 |
16.43 |
0.73 |
|
| 2024-09-13 |
17:12 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.473 |
-18.842 |
4972100 |
1.368 |
1.325 |
-3.604 |
-1.515 |
-1.862 |
-1.289 |
0.674 |
8.502 |
1.808 |
-0.074 |
10.757 |
1.136 |
-0.166 |
9.195 |
0.816 |
|
| 2024-09-12 |
11:56 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.786 |
-66.779 |
1293500 |
1.828 |
5.912 |
0.353 |
2.842 |
1.743 |
3.628 |
0.608 |
-25.757 |
0.72 |
0.529 |
-18.283 |
0.686 |
0.125 |
-5.474 |
0.588 |
|
| 2024-09-11 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-1.57 |
15.266 |
5092500 |
0.847 |
-0.432 |
-2.584 |
-1.708 |
-2.276 |
-0.803 |
-0.6 |
5.965 |
1.454 |
-0.726 |
9.657 |
0.965 |
-0.629 |
0.81 |
0.544 |
|
| 2024-09-10 |
17:12 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.371 |
-3.336 |
6947300 |
2.373 |
5.153 |
-2.269 |
-0.318 |
-0.949 |
1.185 |
-0.304 |
6.852 |
1.228 |
-0.198 |
8.048 |
0.759 |
-1.272 |
6.716 |
0.648 |
|
| 2024-09-09 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.979 |
17.04 |
6109200 |
1.271 |
0.348 |
-2.874 |
-0.476 |
-2.031 |
-0.052 |
-0.482 |
13.739 |
1.082 |
-0.648 |
-2.627 |
0.61 |
-1.057 |
9.82 |
0.953 |
|
| 2024-09-06 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
0.014 |
10.439 |
4955900 |
1.72 |
3.356 |
-1.872 |
-0.344 |
-1.01 |
0.646 |
-0.483 |
-12.46 |
0.614 |
-1.918 |
6.625 |
0.883 |
-0.917 |
11.239 |
1.384 |
|
| 2024-09-05 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.98 |
-35.36 |
4203400 |
1.055 |
0.343 |
-2.773 |
-0.742 |
-1.77 |
-0.268 |
-2.884 |
4.718 |
1.533 |
-1.441 |
7.207 |
1.29 |
-0.471 |
12.365 |
0.992 |
|
| 2024-09-04 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-4.788 |
44.796 |
5843700 |
2.415 |
-1.325 |
-8.096 |
-5.232 |
-6.166 |
-3.453 |
-1.671 |
28.49 |
1.804 |
-1.206 |
27.038 |
2.044 |
-0.285 |
26.098 |
1.398 |
|
| 2024-09-03 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
1.445 |
12.183 |
6070200 |
2.167 |
5.039 |
-0.911 |
0.977 |
-0.298 |
3.139 |
0.584 |
18.159 |
2.916 |
1.137 |
17.463 |
1.778 |
0.219 |
23.62 |
1.289 |
|
| 2024-09-02 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.277 |
24.135 |
6233700 |
4.204 |
7.627 |
-5.208 |
-0.703 |
-2.873 |
1.694 |
0.982 |
20.103 |
2.109 |
0.639 |
24.504 |
1.904 |
0.564 |
32.498 |
1.085 |
|
| 2024-08-30 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
2.242 |
16.07 |
6241700 |
2.524 |
7.865 |
-0.123 |
1.707 |
0.758 |
2.521 |
1.097 |
24.688 |
1.227 |
0.076 |
22.162 |
0.618 |
0.397 |
27.154 |
0.89 |
|
| 2024-08-29 |
17:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
8 |
-0.048 |
33.306 |
4066700 |
2.207 |
3.405 |
-2.679 |
0.002 |
-1.88 |
0.775 |
-0.839 |
21.268 |
1.576 |
0.338 |
39.277 |
0.924 |
-0.022 |
20.312 |
0.473 |
|
| 2024-08-28 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.548 |
3.263 |
3620500 |
2.633 |
1.287 |
-6.874 |
-0.857 |
-1.235 |
0.026 |
0.513 |
41.882 |
1.627 |
-0.013 |
28.624 |
1.152 |
0.227 |
14.897 |
0.847 |
|
| 2024-08-27 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.574 |
80.501 |
4535600 |
5.184 |
16.007 |
-1.145 |
1.311 |
0.158 |
2.257 |
0.754 |
41.304 |
2.592 |
0.491 |
22.165 |
1.455 |
0.413 |
10.753 |
1.217 |
|
| 2024-08-26 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.067 |
2.106 |
3114200 |
1.292 |
1.134 |
-2.791 |
-1.57 |
-1.715 |
-0.127 |
-0.551 |
-7.004 |
0.568 |
0.036 |
-3.094 |
0.786 |
0.534 |
0.976 |
1.054 |
|
| 2024-08-23 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.036 |
-16.113 |
3294100 |
1.058 |
1.786 |
-1.994 |
0 |
-0.589 |
0.517 |
0.587 |
-5.694 |
0.884 |
0.185 |
-9.615 |
1.108 |
0.373 |
-1.939 |
1.03 |
|
| 2024-08-22 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.21 |
4.726 |
5132600 |
2.385 |
4.439 |
-2.271 |
1.222 |
0.039 |
2.73 |
0.296 |
-6.365 |
1.669 |
1.258 |
6.296 |
1.516 |
1.252 |
8.847 |
0.981 |
|
| 2024-08-21 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.619 |
-17.456 |
4946300 |
2.96 |
6.111 |
-4.777 |
-0.71 |
-2.149 |
-0.331 |
1.282 |
7.081 |
2.413 |
0.231 |
0.565 |
1.712 |
1.449 |
11.106 |
1.179 |
|
| 2024-08-20 |
17:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
3.184 |
31.619 |
4837600 |
5.302 |
15.709 |
-4.386 |
2.831 |
1.313 |
2.935 |
0.655 |
9.576 |
3.001 |
1.89 |
18.988 |
1.468 |
1.875 |
211.09 |
1.135 |
|
| 2024-08-19 |
19:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.873 |
-12.467 |
4892500 |
2.114 |
1.388 |
-4.991 |
-1.523 |
-2.895 |
-1.235 |
1.243 |
12.673 |
1.512 |
1.56 |
13.789 |
1.511 |
2.373 |
200.375 |
2.396 |
|
| 2024-08-16 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
4.358 |
37.814 |
8175100 |
3.566 |
11.532 |
0.441 |
3.103 |
2.091 |
5 |
3.276 |
26.916 |
2.865 |
2.689 |
345.433 |
2.366 |
2.995 |
208.737 |
3.339 |
|
| 2024-08-15 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.194 |
16.019 |
7717300 |
3.387 |
9.534 |
-1.505 |
1.512 |
0.289 |
3.274 |
1.854 |
499.242 |
2.483 |
3.127 |
325.51 |
3.684 |
1.748 |
195.905 |
2.877 |
|
| 2024-08-14 |
17:13 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.514 |
982.466 |
6920700 |
1.639 |
4.889 |
-0.412 |
1.471 |
0.29 |
2.46 |
3.593 |
480.256 |
3.927 |
2.807 |
329.95 |
3.826 |
1.411 |
192.277 |
2.482 |
|
| 2024-08-13 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
5.673 |
-21.954 |
7846800 |
6.439 |
21.622 |
-0.613 |
3.684 |
2.871 |
5.882 |
3.454 |
3.692 |
5.026 |
1.677 |
-6.32 |
3.3 |
2.225 |
89.258 |
3.144 |
|
| 2024-08-09 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.234 |
29.339 |
8142900 |
4.231 |
8.504 |
-6.724 |
1.449 |
-0.309 |
2.551 |
-0.321 |
1.497 |
2.108 |
-0.044 |
0.291 |
1.718 |
-1.895 |
96.836 |
2.849 |
|
| 2024-08-08 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.877 |
-26.346 |
4772100 |
2.487 |
2.011 |
-6.096 |
-1.945 |
-2.197 |
-0.583 |
-0.682 |
-14.234 |
1.273 |
1.407 |
146.301 |
3.824 |
-3.293 |
105.08 |
3.194 |
|
| 2024-08-07 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.512 |
-2.121 |
7699900 |
2.845 |
4.236 |
-5.177 |
1.121 |
0.305 |
1.905 |
3.048 |
232.625 |
5.213 |
-2.944 |
160.395 |
4.118 |
-3.601 |
110.95 |
2.814 |
|
| 2024-08-06 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
5.585 |
467.371 |
7402400 |
10.261 |
13.015 |
-21.055 |
8.117 |
6.469 |
9.517 |
-4.672 |
241.653 |
6.294 |
-5.034 |
184.622 |
4.936 |
-3.414 |
109.651 |
3.028 |
|
| 2024-08-05 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-14.929 |
15.936 |
8912200 |
4.419 |
-8.242 |
-20.619 |
-15.583 |
-18.717 |
-10.763 |
-10.343 |
43.247 |
3.444 |
-8.034 |
29.834 |
2.379 |
-4.936 |
36.104 |
1.803 |
|
| 2024-08-02 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-5.757 |
70.559 |
11781000 |
3.139 |
-0.653 |
-9.843 |
-5.408 |
-8.78 |
-4.114 |
-4.587 |
36.782 |
1.666 |
-2.575 |
21.65 |
1.313 |
-1.53 |
34.83 |
1.127 |
|
| 2024-08-01 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-3.418 |
3.006 |
7118100 |
1.347 |
-1.302 |
-5.033 |
-3.918 |
-4.113 |
-2.478 |
-0.984 |
-2.804 |
0.821 |
-1.331 |
31.341 |
1.156 |
-0.181 |
15.894 |
0.674 |
|
| 2024-07-31 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.449 |
-8.615 |
5123400 |
1.954 |
4.207 |
-1.01 |
1.183 |
-0.223 |
3.39 |
-0.288 |
45.509 |
1.492 |
0.508 |
33.529 |
1.181 |
-0.127 |
28.08 |
0.697 |
|
| 2024-07-30 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.025 |
99.633 |
6507200 |
3.946 |
1.75 |
-10.958 |
-1 |
-1.617 |
0.42 |
0.037 |
54.601 |
2.033 |
0.355 |
28.36 |
1.136 |
-0.42 |
33.281 |
0.775 |
|
| 2024-07-29 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.1 |
9.568 |
4504800 |
2.015 |
6.829 |
0.124 |
1.779 |
0.802 |
2.366 |
1.546 |
-7.276 |
0.717 |
-0.02 |
16.46 |
0.375 |
0.22 |
11.768 |
0.865 |
|
| 2024-07-26 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.991 |
-24.121 |
4933300 |
1.855 |
3.848 |
-1.914 |
1.345 |
-0.496 |
1.889 |
-1.08 |
19.906 |
1.198 |
-0.724 |
19.068 |
1.332 |
-0.63 |
15.092 |
1.115 |
|
| 2024-07-25 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-3.151 |
63.933 |
5365800 |
1.62 |
-0.686 |
-5.323 |
-3.833 |
-4.315 |
-1.975 |
-1.582 |
40.662 |
1.503 |
-0.664 |
24.464 |
1.386 |
-0.929 |
18.072 |
1.001 |
|
| 2024-07-24 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.014 |
17.391 |
3262100 |
2.616 |
4.593 |
-3.758 |
-0.801 |
-1.451 |
1.181 |
0.579 |
4.73 |
2.113 |
-0.331 |
11.882 |
1.701 |
-0.509 |
8.549 |
1.281 |
|
| 2024-07-23 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.171 |
-7.932 |
2962700 |
2.034 |
6.01 |
-0.886 |
0.462 |
0.418 |
0.999 |
-0.49 |
9.128 |
1.424 |
-0.493 |
3.012 |
0.883 |
-0.258 |
9.379 |
1.082 |
|
| 2024-07-22 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.15 |
26.188 |
5568800 |
1.654 |
0.219 |
-4.703 |
-1.975 |
-3.726 |
-1.019 |
-1.325 |
8.484 |
0.845 |
-1.234 |
11.095 |
1.135 |
-0.446 |
7.15 |
0.885 |
|
| 2024-07-19 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.5 |
-9.221 |
4127200 |
0.742 |
0.605 |
-1.67 |
-0.484 |
-1.034 |
-0.17 |
-0.776 |
3.548 |
1.63 |
-0.103 |
9.546 |
1.8 |
0.154 |
1.672 |
1.18 |
|
| 2024-07-18 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.053 |
16.318 |
5005300 |
3.187 |
3.517 |
-5.573 |
-1.43 |
-3.212 |
2.067 |
0.095 |
18.93 |
2.496 |
0.14 |
6.261 |
1.507 |
0.726 |
7.829 |
1.557 |
|
| 2024-07-17 |
06:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.243 |
21.543 |
5045700 |
3.443 |
9.53 |
-3.157 |
1.004 |
-0.07 |
1.392 |
0.737 |
1.232 |
1.518 |
0.775 |
0.421 |
1.301 |
1.273 |
15.176 |
1.24 |
|
| 2024-07-16 |
21:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.231 |
-19.078 |
4739800 |
1.191 |
2.292 |
-1.546 |
-0.158 |
-0.339 |
1.246 |
0.541 |
-10.14 |
0.725 |
1.146 |
0.429 |
1.113 |
1.13 |
15.106 |
0.984 |
|
| 2024-07-12 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.851 |
-1.202 |
4913200 |
1.98 |
3.213 |
-3.011 |
0.818 |
0 |
2.732 |
1.604 |
10.183 |
2.008 |
1.631 |
24.472 |
1.439 |
0.939 |
25.027 |
1.088 |
|
| 2024-07-11 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.358 |
21.567 |
5587100 |
2.476 |
6.259 |
-1.84 |
1.826 |
0.964 |
3.852 |
2.021 |
37.308 |
1.739 |
1.523 |
31.937 |
1.365 |
0.624 |
25.61 |
1.123 |
|
| 2024-07-10 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.684 |
53.05 |
5946700 |
4.168 |
12.027 |
-1.265 |
-0.147 |
-0.735 |
2.437 |
1.106 |
37.122 |
2.532 |
0.495 |
34.923 |
2.058 |
0.158 |
20.551 |
1.415 |
|
| 2024-07-09 |
09:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.528 |
21.195 |
5924700 |
1.309 |
2.706 |
-1.846 |
0.666 |
-0.341 |
1.244 |
-0.1 |
25.86 |
1.097 |
-0.307 |
17.812 |
0.983 |
-0.217 |
12.011 |
0.659 |
|
| 2024-07-08 |
19:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.727 |
30.526 |
5296700 |
1.616 |
1.796 |
-3.706 |
-1.031 |
-1.245 |
0.337 |
-0.724 |
16.12 |
1.18 |
-0.474 |
9.503 |
0.817 |
-0.33 |
11.082 |
0.483 |
|
| 2024-07-05 |
17:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.722 |
1.715 |
4809200 |
1.339 |
0.999 |
-2.718 |
-0.503 |
-1.719 |
-0.023 |
-0.347 |
-1.009 |
0.592 |
-0.295 |
2.779 |
0.704 |
-0.16 |
3.941 |
0.49 |
|
| 2024-07-04 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.028 |
-3.732 |
4186400 |
1.001 |
0.983 |
-2.358 |
0.302 |
-0.199 |
0.432 |
-0.082 |
3.31 |
1.14 |
-0.067 |
7.724 |
0.778 |
-0.098 |
8.07 |
0.634 |
|
| 2024-07-03 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.192 |
10.353 |
5470500 |
1.46 |
1.361 |
-3.454 |
0 |
-0.791 |
0.987 |
-0.115 |
13.451 |
0.784 |
-0.034 |
7.241 |
0.626 |
-0.322 |
6.055 |
0.455 |
|
| 2024-07-02 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.038 |
16.55 |
6217400 |
0.705 |
0.725 |
-1.088 |
0.183 |
-0.643 |
0.596 |
0.044 |
5.685 |
0.519 |
-0.108 |
11.243 |
0.596 |
-0.168 |
7.622 |
0.581 |
|
| 2024-07-01 |
06:49 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.126 |
-5.18 |
5271900 |
1.115 |
1.62 |
-1.678 |
-0.135 |
-0.424 |
1.342 |
-0.143 |
8.59 |
0.942 |
-0.461 |
1.123 |
0.706 |
0.13 |
4.67 |
0.571 |
|
| 2024-06-28 |
18:50 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.412 |
22.36 |
4816700 |
1.405 |
1.748 |
-2.659 |
-0.169 |
-1.556 |
0.462 |
-0.754 |
4.275 |
0.769 |
-0.31 |
8.913 |
0.872 |
0.147 |
2.866 |
0.521 |
|
| 2024-06-27 |
18:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.096 |
-13.81 |
5108700 |
1.145 |
-0.135 |
-3.618 |
-0.741 |
-1.603 |
-0.194 |
-0.258 |
2.19 |
1.173 |
0.313 |
2.057 |
0.933 |
0.029 |
6.219 |
0.619 |
|
| 2024-06-26 |
17:56 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.579 |
18.19 |
4914800 |
1.694 |
4.251 |
-1.486 |
0.093 |
-0.194 |
1.132 |
1.017 |
9.991 |
1.033 |
0.748 |
1.928 |
0.74 |
0.254 |
10.131 |
0.978 |
|
| 2024-06-25 |
17:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.455 |
1.792 |
4415000 |
1.526 |
5.114 |
0.219 |
0.983 |
0.537 |
1.329 |
0.833 |
-6.204 |
0.795 |
0.22 |
8.904 |
0.425 |
-0.004 |
8.653 |
0.559 |
|
| 2024-06-24 |
16:52 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.211 |
-14.199 |
4415900 |
1.536 |
2.853 |
-2.018 |
-0.136 |
-0.624 |
1.284 |
-0.397 |
12.461 |
1.101 |
-0.256 |
10.225 |
1.586 |
-0.137 |
3.476 |
0.972 |
|
| 2024-06-21 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.005 |
39.12 |
6471700 |
1.345 |
0.442 |
-4.2 |
-0.638 |
-1.197 |
-0.417 |
-0.489 |
22.437 |
2.034 |
-0.562 |
18.557 |
1.065 |
-0.445 |
9.608 |
0.345 |
|
| 2024-06-20 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.027 |
5.753 |
3602700 |
2.897 |
2.872 |
-6.309 |
1.006 |
-0.827 |
2.105 |
-0.34 |
8.275 |
0.995 |
0.036 |
-2.513 |
1.034 |
-0.135 |
8.474 |
0.418 |
|
| 2024-06-19 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.708 |
10.797 |
4481400 |
1.403 |
1.989 |
-2.287 |
-0.974 |
-1.773 |
-0.039 |
0.04 |
-6.646 |
1.038 |
-0.415 |
1.056 |
1.356 |
-0.224 |
13.851 |
1.23 |
|
| 2024-06-18 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.788 |
-24.09 |
4658500 |
1.669 |
3.831 |
-0.825 |
0.296 |
-0.63 |
1.835 |
-0.269 |
-3.814 |
1.522 |
0.003 |
8.606 |
1.065 |
-0.039 |
13.501 |
1.473 |
|
| 2024-06-17 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.326 |
16.462 |
5004200 |
3.609 |
7.306 |
-5.375 |
-1.98 |
-3.319 |
-1.222 |
-0.39 |
24.954 |
1.729 |
-0.4 |
27.516 |
1.849 |
-0.17 |
17.726 |
1.639 |
|
| 2024-06-14 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.546 |
33.446 |
6341000 |
1.403 |
3.093 |
-1.224 |
0.336 |
-0.546 |
1.338 |
0.063 |
33.043 |
1.17 |
0.114 |
25.044 |
1.504 |
0.212 |
16.667 |
1.028 |
|
| 2024-06-13 |
20:48 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.419 |
32.64 |
5813600 |
2.42 |
4.718 |
-3.143 |
-0.309 |
-2.187 |
0 |
-0.102 |
20.843 |
2.21 |
-0.023 |
12.908 |
1.639 |
0.163 |
12.729 |
1.191 |
|
| 2024-06-12 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.215 |
9.046 |
4801700 |
2.522 |
6.367 |
-2.423 |
0.1 |
-0.867 |
0.371 |
0.175 |
3.042 |
1.478 |
0.311 |
5.749 |
1.289 |
0.025 |
7.214 |
1.028 |
|
| 2024-06-11 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.135 |
-2.962 |
5951400 |
1.468 |
1.765 |
-2.934 |
0.599 |
-0.599 |
1.06 |
0.359 |
4.101 |
1.431 |
0.34 |
7.319 |
1.186 |
0.623 |
111.56 |
3.046 |
|
| 2024-06-10 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.582 |
11.164 |
5960300 |
1.706 |
3.161 |
-2.966 |
0.569 |
-0.168 |
1.747 |
0.442 |
12.459 |
1.215 |
-0.076 |
9.996 |
1.054 |
1.123 |
112.968 |
4.151 |
|
| 2024-06-07 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.302 |
13.755 |
6951200 |
1.021 |
2.566 |
-0.668 |
0.085 |
-0.401 |
0.471 |
-0.404 |
9.412 |
1 |
0.8 |
183.199 |
4.825 |
1.318 |
113.243 |
5.12 |
|
| 2024-06-06 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.11 |
5.07 |
3927400 |
1.302 |
1.025 |
-3.742 |
-1.032 |
-1.291 |
-0.795 |
1.049 |
267.921 |
7.064 |
1.578 |
179.974 |
6.784 |
1.556 |
115.541 |
4.987 |
|
| 2024-06-05 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
3.208 |
530.772 |
5543900 |
14.212 |
41.006 |
-3.2 |
-1.308 |
-1.949 |
-0.348 |
2.922 |
267.426 |
10.267 |
2.466 |
182.463 |
8.472 |
1.576 |
117.286 |
5.227 |
|
| 2024-06-04 |
17:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.636 |
4.081 |
4806500 |
6.499 |
19.133 |
-1.149 |
0.166 |
-0.505 |
0.874 |
2.095 |
8.309 |
5.652 |
1.894 |
13.955 |
3.662 |
0.466 |
14.074 |
2.465 |
|
| 2024-06-03 |
22:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.555 |
12.537 |
4641000 |
4.981 |
14.62 |
-1.416 |
0.043 |
-0.835 |
1.007 |
1.523 |
18.892 |
2.425 |
0.678 |
17.193 |
1.949 |
0.135 |
18.777 |
1.294 |
|
| 2024-05-31 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.492 |
25.247 |
8106900 |
1.281 |
4.675 |
0.588 |
1.033 |
0.795 |
1.293 |
0.24 |
19.521 |
0.671 |
-0.62 |
17.917 |
0.686 |
0.065 |
16.459 |
0.712 |
|
| 2024-05-30 |
17:13 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.011 |
13.794 |
4307600 |
1.226 |
1.796 |
-1.992 |
-1.427 |
-1.719 |
-1.087 |
-1.676 |
14.252 |
0.99 |
-0.79 |
18.701 |
0.771 |
-0.489 |
13.842 |
0.825 |
|
| 2024-05-29 |
17:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.342 |
14.71 |
6620100 |
1.212 |
-0.894 |
-5.052 |
-2.144 |
-2.639 |
-1.765 |
-0.68 |
21.155 |
1.054 |
-0.052 |
14.419 |
1.11 |
-0.164 |
9.589 |
0.82 |
|
| 2024-05-28 |
22:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.982 |
27.599 |
8320100 |
2.165 |
5.892 |
-1.335 |
0.592 |
-0.315 |
1.786 |
1.093 |
14.273 |
1.743 |
0.303 |
13.568 |
1.378 |
0.127 |
6.539 |
0.761 |
|
| 2024-05-27 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.204 |
0.947 |
3810900 |
1.386 |
4.089 |
-0.138 |
0.535 |
0.446 |
2.01 |
-0.037 |
6.553 |
1.089 |
0.179 |
1.878 |
0.738 |
-0.324 |
5.968 |
0.621 |
|
| 2024-05-24 |
21:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.278 |
12.158 |
3565100 |
1.279 |
0.211 |
-3.794 |
-1.057 |
-1.319 |
-0.518 |
-0.333 |
2.344 |
0.881 |
-0.518 |
1.383 |
0.764 |
-0.39 |
6.343 |
0.689 |
|
| 2024-05-23 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.612 |
-7.47 |
3257300 |
1.657 |
2.3 |
-3.329 |
0.749 |
0.548 |
1.581 |
-0.138 |
-4.004 |
0.916 |
-0.516 |
5.578 |
0.787 |
-0.186 |
0.109 |
0.484 |
|
| 2024-05-22 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.887 |
-0.538 |
3862200 |
0.998 |
0 |
-2.782 |
-0.442 |
-1.587 |
-0.179 |
-1.079 |
12.103 |
0.724 |
-0.428 |
9.009 |
0.848 |
-0.314 |
4.524 |
0.687 |
|
| 2024-05-21 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.271 |
24.744 |
3425700 |
0.833 |
0 |
-2.613 |
-1.174 |
-1.632 |
-0.9 |
-0.199 |
13.783 |
1.051 |
-0.218 |
2.852 |
0.712 |
-0.141 |
14.078 |
0.677 |
|
| 2024-05-20 |
18:54 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.874 |
2.822 |
3374100 |
1.624 |
3.989 |
-1.165 |
0.09 |
-0.019 |
2.029 |
0.309 |
-8.095 |
0.886 |
0.195 |
-0.529 |
0.979 |
-0.007 |
11.526 |
0.806 |
|
| 2024-05-17 |
10:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.257 |
-19.011 |
3893100 |
0.941 |
0.915 |
-1.955 |
0 |
-0.762 |
0.158 |
-0.144 |
-2.204 |
1.069 |
-0.103 |
14.275 |
0.819 |
-0.107 |
12.08 |
0.68 |
|
| 2024-05-16 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.031 |
14.603 |
3765900 |
1.801 |
2.671 |
-2.83 |
-0.228 |
-0.657 |
0.324 |
-0.025 |
30.917 |
1.038 |
-0.218 |
24.607 |
0.972 |
-0.232 |
19.285 |
0.826 |
|
| 2024-05-15 |
09:12 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.019 |
47.232 |
3651600 |
1.341 |
2.906 |
-1.958 |
-0.323 |
-0.749 |
0.34 |
-0.311 |
29.609 |
0.972 |
-0.081 |
21.603 |
0.793 |
-0.351 |
20.383 |
0.927 |
|
| 2024-05-14 |
17:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.603 |
11.986 |
5525300 |
1.187 |
1.043 |
-2.909 |
-0.771 |
-1.24 |
0.324 |
-0.112 |
8.788 |
1.016 |
-0.37 |
11.53 |
0.92 |
-0.314 |
8.777 |
0.787 |
|
| 2024-05-13 |
17:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.378 |
5.591 |
7613900 |
2.376 |
4.088 |
-3.36 |
0.168 |
-0.593 |
1.028 |
-0.253 |
11.302 |
1.4 |
-0.378 |
14.232 |
1.184 |
0.14 |
13.692 |
0.57 |
|
| 2024-05-10 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.884 |
17.014 |
6232400 |
1.513 |
0.485 |
-4.451 |
-0.44 |
-1.195 |
-0.093 |
-0.756 |
18.552 |
1.523 |
-0.449 |
8.77 |
0.934 |
0.14 |
14.069 |
0.96 |
|
| 2024-05-09 |
17:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.629 |
20.091 |
3771000 |
1.813 |
1.345 |
-4.085 |
-0.401 |
-1.825 |
0.709 |
-0.232 |
4.648 |
0.808 |
0.402 |
15.285 |
0.626 |
0.451 |
6.023 |
1.293 |
|
| 2024-05-08 |
17:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.165 |
-10.795 |
3391200 |
0.866 |
1.094 |
-1.52 |
0.518 |
-0.446 |
0.716 |
0.918 |
12.881 |
1.28 |
0.737 |
11.08 |
1.584 |
0.928 |
5.112 |
1.527 |
|
| 2024-05-07 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.671 |
36.558 |
3929900 |
2.248 |
6.882 |
-0.297 |
1.224 |
0 |
1.927 |
1.023 |
22.017 |
2.275 |
0.905 |
6.939 |
2.085 |
1.058 |
34.809 |
1.763 |
|
| 2024-05-02 |
17:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.376 |
7.476 |
3388100 |
2.611 |
6.907 |
-1.812 |
-0.213 |
-0.815 |
0.441 |
0.523 |
-7.871 |
2.32 |
0.934 |
-0.068 |
1.923 |
0.51 |
25.47 |
1.52 |
|
| 2024-05-01 |
17:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.67 |
-23.217 |
3793400 |
2.367 |
5.213 |
-2.301 |
0.112 |
-0.757 |
1.351 |
1.213 |
-3.839 |
1.744 |
1.082 |
43.336 |
1.918 |
0.832 |
30.682 |
1.053 |
|
| 2024-04-30 |
17:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.756 |
15.538 |
5345300 |
2.098 |
4.112 |
-3.092 |
1.769 |
1.374 |
3.018 |
1.287 |
76.613 |
2.127 |
0.502 |
47.697 |
1.582 |
0.739 |
31.846 |
0.748 |
|
| 2024-04-26 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.818 |
137.688 |
4834000 |
2.939 |
7.975 |
-2.385 |
0.206 |
-0.542 |
1.333 |
-0.126 |
63.776 |
1.871 |
0.579 |
53.697 |
1.266 |
0.583 |
25.309 |
0.858 |
|
| 2024-04-25 |
17:12 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.07 |
-10.136 |
3555700 |
1.353 |
1.08 |
-2.913 |
-0.839 |
-1.796 |
-0.74 |
0.459 |
11.701 |
1.113 |
0.373 |
2.002 |
1.152 |
-0.203 |
7.735 |
0.559 |
|
| 2024-04-24 |
20:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.988 |
33.538 |
4443400 |
1.852 |
4.333 |
-0.803 |
2.229 |
0.389 |
3.455 |
1.095 |
8.071 |
1.563 |
1.056 |
-0.336 |
0.893 |
0.244 |
4.905 |
0.242 |
|
| 2024-04-23 |
17:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.203 |
-17.396 |
2928600 |
1.525 |
3.115 |
-2.351 |
0.235 |
-0.521 |
0.917 |
0.59 |
-17.273 |
0.709 |
-0.644 |
5.092 |
0.726 |
-0.294 |
-6.009 |
0.872 |
|
| 2024-04-22 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.977 |
-17.151 |
3565300 |
1.052 |
2.239 |
-1.089 |
1.059 |
0.697 |
1.754 |
-1.067 |
16.335 |
1.392 |
-0.324 |
2.795 |
1.273 |
-1.016 |
4.708 |
0.769 |
|
| 2024-04-19 |
17:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-3.112 |
49.821 |
4614700 |
2.306 |
0.303 |
-7.95 |
-2.488 |
-3.558 |
-2.014 |
-0.974 |
12.767 |
1.65 |
-0.883 |
1.501 |
1.137 |
-0.998 |
49.826 |
0.668 |
|
| 2024-04-18 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.163 |
-24.287 |
3854300 |
1.616 |
4.553 |
-0.532 |
0.789 |
0 |
1.905 |
0.232 |
-22.659 |
2.15 |
-0.981 |
-3.044 |
1.041 |
-0.266 |
46.953 |
0.758 |
|
| 2024-04-17 |
17:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.7 |
-21.031 |
4367800 |
4.795 |
10.849 |
-6.24 |
-0.926 |
-3.092 |
-0.605 |
-2.053 |
7.578 |
2.074 |
-1.013 |
74.532 |
1.538 |
-0.54 |
57.532 |
1.181 |
|
| 2024-04-16 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-3.406 |
36.187 |
5527200 |
3.953 |
0.939 |
-9.819 |
-2.641 |
-4.342 |
0.164 |
-1.17 |
122.313 |
2.206 |
-0.598 |
93.36 |
1.589 |
-0.309 |
63.679 |
0.998 |
|
| 2024-04-15 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.066 |
208.44 |
4227700 |
1.715 |
4.467 |
-0.423 |
0.244 |
0.053 |
2.136 |
0.806 |
121.947 |
0.985 |
0.469 |
90.835 |
0.988 |
0.639 |
58.603 |
0.632 |
|
| 2024-04-12 |
15:51 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.545 |
35.454 |
4768300 |
1.1 |
2.733 |
-0.699 |
0.363 |
-0.276 |
0.985 |
0.17 |
32.033 |
1.089 |
0.264 |
24.589 |
0.66 |
0.485 |
12.96 |
0.758 |
|
| 2024-04-11 |
15:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.205 |
28.611 |
3444200 |
1.449 |
2.163 |
-2.135 |
-0.95 |
-1.075 |
0.827 |
0.124 |
19.156 |
0.821 |
0.528 |
16.374 |
0.732 |
0.189 |
9.019 |
0.681 |
|
| 2024-04-10 |
15:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.453 |
9.702 |
3491200 |
1.017 |
2.266 |
-0.916 |
0.365 |
-0.149 |
0.877 |
0.894 |
10.255 |
0.611 |
0.695 |
0.246 |
0.68 |
0.206 |
2.567 |
0.536 |
|
| 2024-04-09 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.335 |
10.808 |
4434900 |
1.056 |
3.148 |
0.149 |
0.885 |
0.765 |
2.152 |
0.816 |
-4.482 |
1.143 |
0.233 |
2.26 |
0.867 |
0.036 |
-1.376 |
0.716 |
|
| 2024-04-08 |
17:12 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.296 |
-19.773 |
2866100 |
1.777 |
3.102 |
-1.823 |
-0.377 |
-0.593 |
1.921 |
-0.319 |
-2.014 |
1.118 |
-0.252 |
-2.559 |
0.875 |
-0.485 |
1.66 |
0.465 |
|
| 2024-04-05 |
20:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.934 |
15.745 |
3022500 |
0.705 |
0.437 |
-1.912 |
-0.918 |
-1.395 |
-0.736 |
-0.526 |
6.048 |
0.787 |
-0.484 |
0.696 |
0.893 |
-0.744 |
9.988 |
0.619 |
|
| 2024-04-04 |
17:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.119 |
-3.649 |
3650300 |
1.394 |
1.826 |
-2.326 |
0.431 |
-0.776 |
0.917 |
-0.259 |
-6.829 |
1.258 |
-0.596 |
4.11 |
0.684 |
-0.376 |
4.543 |
0.555 |
|
| 2024-04-03 |
17:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.4 |
-10.009 |
3750400 |
1.697 |
3.017 |
-2.419 |
-0.37 |
-1.751 |
0.282 |
-0.835 |
7.989 |
0.892 |
-0.89 |
12.615 |
1.074 |
-0.559 |
5.915 |
0.747 |
|
| 2024-04-02 |
17:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.27 |
25.988 |
3700900 |
1.91 |
3.316 |
-3.353 |
-1.798 |
-2.256 |
-1.041 |
-1.135 |
23.927 |
1.564 |
-0.454 |
12.125 |
0.919 |
-0.403 |
17.359 |
0.945 |
|
| 2024-04-01 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.999 |
21.866 |
3330300 |
1.987 |
2.037 |
-3.96 |
-0.146 |
-2.982 |
0 |
-0.046 |
5.193 |
0.832 |
-0.375 |
4.532 |
1.069 |
-0.196 |
12.909 |
0.706 |
|
| 2024-03-29 |
17:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.908 |
-11.479 |
3997100 |
0.842 |
3.061 |
0.219 |
0.668 |
0.535 |
0.734 |
-0.063 |
-4.135 |
1.527 |
0.085 |
12.981 |
1.055 |
-0.22 |
9.713 |
0.584 |
|
| 2024-03-28 |
19:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.033 |
3.209 |
5011000 |
2.511 |
2.797 |
-4.114 |
-1.99 |
-3.072 |
0.987 |
-0.327 |
25.211 |
1.332 |
-0.296 |
18.052 |
0.795 |
-0.52 |
8.467 |
0.685 |
|
| 2024-03-27 |
19:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.379 |
47.213 |
3818800 |
0.639 |
1.431 |
-0.704 |
0.351 |
0.141 |
0.765 |
0.072 |
25.474 |
1.126 |
-0.325 |
18.944 |
1.078 |
0.103 |
17.753 |
0.396 |
|
| 2024-03-26 |
20:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.234 |
3.734 |
3559100 |
2.161 |
1.143 |
-5.785 |
0.574 |
-0.1 |
0.795 |
-0.677 |
4.81 |
1.573 |
-0.648 |
-2.695 |
1.396 |
0.092 |
13.973 |
0.739 |
|
| 2024-03-25 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.121 |
5.885 |
3027000 |
1.28 |
0.342 |
-3.355 |
-0.712 |
-1.875 |
-0.084 |
-0.855 |
-5.91 |
1.078 |
0.124 |
12.605 |
1.03 |
0.528 |
13.952 |
1.252 |
|
| 2024-03-22 |
17:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.589 |
-17.705 |
4353300 |
1.509 |
0.848 |
-3.246 |
-0.018 |
-1.775 |
0.571 |
0.746 |
15.965 |
1.913 |
0.604 |
20.083 |
1.936 |
0.885 |
13.649 |
1.22 |
|
| 2024-03-21 |
17:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.08 |
49.635 |
5818200 |
4.515 |
13.908 |
-0.699 |
0.795 |
0.091 |
1.284 |
1.201 |
38.976 |
3.14 |
1.449 |
27.193 |
2.539 |
0.958 |
28.089 |
1.343 |
|
| 2024-03-19 |
21:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.321 |
28.317 |
4895600 |
2.474 |
4.22 |
-5.094 |
0.181 |
0.143 |
1.411 |
1.134 |
15.972 |
1.876 |
0.978 |
12.106 |
0.825 |
0.395 |
18.7 |
0.809 |
|
| 2024-03-18 |
17:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.946 |
3.626 |
3829900 |
1.838 |
5.416 |
0.324 |
1.109 |
0.882 |
1.632 |
1.306 |
4 |
0.756 |
0.797 |
20.831 |
0.53 |
0.516 |
8.207 |
0.465 |
|
| 2024-03-15 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.667 |
4.374 |
4564600 |
2.321 |
4.99 |
-3.746 |
0.89 |
0.297 |
1.314 |
0.222 |
29.434 |
1.395 |
-0.098 |
20.519 |
1.015 |
-0.391 |
8.953 |
0.725 |
|
| 2024-03-14 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.223 |
54.494 |
4407600 |
2.361 |
3.533 |
-4.934 |
0 |
-0.43 |
0.38 |
-0.48 |
28.592 |
1.613 |
-0.012 |
11.013 |
1.136 |
-0.412 |
11.449 |
0.961 |
|
| 2024-03-13 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.737 |
2.689 |
3888400 |
1.476 |
1.752 |
-3.121 |
-0.726 |
-1.534 |
0 |
0.094 |
-10.728 |
0.913 |
-0.799 |
-4.701 |
0.842 |
-0.657 |
5.894 |
0.684 |
|
| 2024-03-12 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.925 |
-24.146 |
3893600 |
1.265 |
3.259 |
-0.816 |
0.774 |
0.384 |
1.183 |
-0.83 |
-8.396 |
0.901 |
-0.366 |
0.021 |
0.661 |
-0.392 |
9.308 |
0.582 |
|
| 2024-03-11 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.585 |
7.353 |
4360300 |
1.434 |
-0.856 |
-5.996 |
-2.504 |
-2.722 |
-2.193 |
-1.012 |
12.105 |
0.85 |
-1.158 |
16.976 |
0.709 |
-0.596 |
10.561 |
0.651 |
|
| 2024-03-08 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.562 |
16.856 |
5465800 |
0.527 |
1.393 |
-0.036 |
0.286 |
0.177 |
0.983 |
-0.445 |
21.787 |
0.714 |
-0.1 |
21.11 |
0.725 |
-0.056 |
15.042 |
0.567 |
|
| 2024-03-07 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.451 |
26.718 |
4711300 |
1.085 |
0.311 |
-3.627 |
-1.312 |
-1.429 |
-1.149 |
-0.431 |
23.237 |
0.911 |
-0.318 |
9.531 |
0.926 |
0.005 |
7.652 |
0.511 |
|
| 2024-03-06 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.59 |
19.756 |
4266100 |
0.998 |
1.78 |
-1.026 |
0.468 |
-0.035 |
1.596 |
0.248 |
0.938 |
1.007 |
0.203 |
10.546 |
0.626 |
0.181 |
4.727 |
0.592 |
|
| 2024-03-05 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.093 |
-17.881 |
4891600 |
1.088 |
1.39 |
-2.337 |
0.156 |
-0.72 |
0.597 |
0.01 |
5.94 |
0.559 |
0.296 |
-2.738 |
0.623 |
-0.164 |
5.526 |
0.6 |
|
| 2024-03-04 |
17:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.114 |
29.762 |
5264400 |
0.956 |
1.818 |
-1.681 |
0.222 |
-0.156 |
0.322 |
0.491 |
4.833 |
0.988 |
0.137 |
7.253 |
1.088 |
-0.142 |
4.92 |
0.835 |
|
| 2024-03-01 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.868 |
-20.096 |
4274100 |
1.262 |
2.946 |
-1.215 |
0.628 |
0.473 |
1.758 |
0.148 |
-4.002 |
1.41 |
-0.28 |
5.25 |
1.034 |
0.286 |
3.827 |
0.858 |
|
| 2024-02-29 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.572 |
12.092 |
5416000 |
2.038 |
3.591 |
-3.083 |
-0.933 |
-1.284 |
0.243 |
-0.854 |
17.923 |
1.193 |
-0.564 |
4.977 |
1.189 |
0.365 |
15.674 |
0.883 |
|
| 2024-02-28 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.136 |
23.754 |
4951900 |
1.085 |
0.696 |
-2.504 |
-1.042 |
-2.119 |
-0.319 |
-0.56 |
1.42 |
1.133 |
0.378 |
9.045 |
0.81 |
0.442 |
13.548 |
0.757 |
|
| 2024-02-27 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.016 |
-20.914 |
4418900 |
1.464 |
1.343 |
-2.443 |
0.775 |
-0.617 |
0.997 |
1.135 |
1.691 |
1.328 |
1.177 |
14.174 |
1.334 |
1.036 |
14.262 |
1.127 |
|
| 2024-02-26 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.253 |
24.297 |
4298400 |
3.266 |
8.264 |
-1.22 |
0.73 |
0 |
5.331 |
1.757 |
31.718 |
2.477 |
1.111 |
21.634 |
1.757 |
1.181 |
19.292 |
1.365 |
|
| 2024-02-22 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.261 |
39.14 |
4058500 |
2.734 |
8.151 |
-0.886 |
0.812 |
-0.276 |
1.079 |
0.539 |
20.303 |
1.651 |
0.97 |
22.643 |
1.318 |
0.947 |
23.65 |
1.018 |
|
| 2024-02-21 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.183 |
1.465 |
3247300 |
1.181 |
0.776 |
-2.434 |
0.279 |
-0.162 |
0.63 |
0.824 |
14.395 |
1.574 |
0.797 |
11.007 |
1.629 |
0.578 |
11.788 |
0.803 |
|
| 2024-02-20 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.83 |
27.324 |
4167400 |
3.853 |
11.715 |
-0.498 |
0.403 |
-0.162 |
1.899 |
1.287 |
15.778 |
2.891 |
1.218 |
25.881 |
1.721 |
0.587 |
12.279 |
1.418 |
|
| 2024-02-19 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.744 |
4.232 |
3775500 |
2.638 |
5.055 |
-3.089 |
1.424 |
-0.725 |
1.812 |
0.912 |
25.16 |
1.138 |
0.415 |
10.051 |
0.922 |
0.212 |
34.23 |
1.057 |
|
| 2024-02-16 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.08 |
46.087 |
4747900 |
1.944 |
5.607 |
-1.113 |
0.331 |
0 |
1.531 |
0.25 |
12.96 |
1.668 |
0.121 |
9.946 |
1.326 |
-0.134 |
33.188 |
1.171 |
|
| 2024-02-15 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.581 |
-20.167 |
3534600 |
1.56 |
1.975 |
-2.63 |
-0.82 |
-1.872 |
0.153 |
-0.359 |
-8.125 |
1.392 |
-0.255 |
40.276 |
1.422 |
-0.414 |
22.908 |
0.962 |
|
| 2024-02-14 |
11:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.63 |
-86.374 |
744300 |
2.415 |
5.215 |
-3.507 |
-1.061 |
-1.459 |
-0.432 |
-0.338 |
25.352 |
1.324 |
-0.554 |
16.576 |
1.051 |
-0.515 |
8.597 |
0.696 |
|
| 2024-02-13 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.047 |
137.079 |
4948600 |
3.305 |
4.52 |
-5.769 |
1.158 |
-1.752 |
1.538 |
-0.517 |
68.051 |
1.8 |
-0.45 |
43.596 |
1.259 |
-0.308 |
32.574 |
0.928 |
|
| 2024-02-09 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.986 |
-0.977 |
5322800 |
1.034 |
0.024 |
-2.671 |
-0.487 |
-1.99 |
-0.213 |
-0.652 |
-3.145 |
0.564 |
-0.632 |
-2.574 |
0.809 |
-0.372 |
34.619 |
0.898 |
|
| 2024-02-08 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.317 |
-5.314 |
4872800 |
1.511 |
1.65 |
-3.214 |
0 |
-1.149 |
0.159 |
-0.456 |
-3.372 |
1.21 |
-0.169 |
8.923 |
1.08 |
-0.025 |
35.364 |
0.864 |
|
| 2024-02-07 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.594 |
-1.43 |
4732000 |
2.187 |
2.507 |
-4.117 |
-1.208 |
-1.64 |
0.729 |
-0.095 |
16.041 |
1.476 |
-0.186 |
59.795 |
1.268 |
-0.097 |
33.668 |
0.802 |
|
| 2024-02-06 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.404 |
33.512 |
8728500 |
2.384 |
4.83 |
-3.281 |
0.431 |
-0.96 |
0.845 |
0.018 |
90.407 |
1.918 |
0.262 |
61.187 |
1.337 |
-0.039 |
36.018 |
0.82 |
|
| 2024-02-05 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.369 |
147.302 |
4637800 |
2.255 |
2.272 |
-5.526 |
0.298 |
-0.836 |
0.87 |
0.19 |
75.025 |
1.153 |
-0.098 |
45.419 |
0.77 |
-0.232 |
44.785 |
0.645 |
|
| 2024-02-02 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.75 |
2.748 |
2979100 |
0.754 |
2.323 |
-0.182 |
0.542 |
0.359 |
0.914 |
0.038 |
-5.523 |
0.812 |
-0.077 |
-0.241 |
0.525 |
-0.16 |
11.732 |
0.386 |
|
| 2024-02-01 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.674 |
-13.793 |
3033300 |
0.964 |
0.78 |
-2.281 |
-0.901 |
-1.24 |
0.272 |
-0.491 |
-1.735 |
0.585 |
-0.514 |
24.625 |
0.456 |
-0.276 |
33.674 |
0.593 |
|
| 2024-01-31 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.307 |
10.322 |
4210900 |
1.059 |
2.145 |
-1.429 |
-0.453 |
-0.938 |
-0.158 |
-0.433 |
43.834 |
0.82 |
-0.293 |
23.236 |
0.75 |
-0.089 |
40.5 |
0.603 |
|
| 2024-01-30 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.559 |
77.346 |
2711700 |
1.48 |
1.278 |
-3.289 |
-0.426 |
-1.074 |
0.552 |
-0.285 |
29.692 |
0.832 |
-0.132 |
57.28 |
0.88 |
-0.012 |
32.26 |
0.556 |
|
| 2024-01-29 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.011 |
-17.962 |
3829600 |
1.742 |
2.49 |
-3.048 |
0.213 |
-1.201 |
1.333 |
0.081 |
47.247 |
1.561 |
0.141 |
38.278 |
1.072 |
-0.072 |
18.236 |
0.926 |
|
| 2024-01-26 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.174 |
112.455 |
5064600 |
3.572 |
8.504 |
-3.983 |
-0.836 |
-1.319 |
0.134 |
0.217 |
66.397 |
1.833 |
0.17 |
33.972 |
1.258 |
0.349 |
28.725 |
0.792 |
|
| 2024-01-25 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.261 |
20.34 |
3029900 |
0.591 |
0.883 |
-0.976 |
0.204 |
0.052 |
0.794 |
0.168 |
-5.269 |
0.459 |
-0.174 |
-1.104 |
0.803 |
0.545 |
10.234 |
0.388 |
|
| 2024-01-24 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.075 |
-30.877 |
2873400 |
0.682 |
0.937 |
-0.999 |
0 |
-0.22 |
0.477 |
-0.391 |
-11.825 |
1.009 |
0.437 |
3.61 |
0.368 |
0.603 |
0.007 |
0.707 |
|
| 2024-01-23 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.857 |
7.227 |
3631400 |
2.22 |
1.136 |
-5.865 |
0 |
-0.945 |
0.714 |
0.617 |
20.854 |
0.612 |
0.796 |
20.569 |
0.607 |
0.224 |
11.126 |
0.363 |
|
| 2024-01-22 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.091 |
34.482 |
4000700 |
2.245 |
7.815 |
0.285 |
1.474 |
1.188 |
2.087 |
1.623 |
27.241 |
1.682 |
1.266 |
7.895 |
1.674 |
0.293 |
18.927 |
0.96 |
|
| 2024-01-19 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.155 |
20 |
3098400 |
1.607 |
3.569 |
-0.32 |
0.227 |
0 |
2.802 |
0.853 |
-5.399 |
1.459 |
-0.039 |
4.641 |
0.444 |
-0.204 |
17.874 |
1.201 |
|
| 2024-01-18 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.552 |
-30.798 |
3169300 |
2.395 |
5.594 |
-2.957 |
0.642 |
-0.267 |
1.149 |
-0.636 |
-3.038 |
0.996 |
-0.594 |
13.385 |
1.403 |
-0.501 |
10.982 |
1.268 |
|
| 2024-01-17 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.824 |
24.722 |
4394600 |
2.668 |
0.951 |
-7.775 |
-1.136 |
-2.2 |
-0.322 |
-1.167 |
35.477 |
2.905 |
-0.909 |
33.389 |
2.665 |
-0.553 |
23.41 |
1.633 |
|
| 2024-01-16 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.509 |
46.232 |
3288700 |
3.969 |
9.779 |
-3.858 |
-1.345 |
-2.103 |
-1.05 |
-0.451 |
37.723 |
2.893 |
-0.411 |
20.328 |
1.97 |
-0.1 |
15.111 |
1.157 |
|
| 2024-01-15 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.393 |
29.214 |
2906800 |
2.528 |
2.14 |
-6.506 |
0.157 |
-0.668 |
1.129 |
-0.362 |
7.377 |
1.352 |
-0.144 |
15.366 |
0.98 |
0.33 |
16.568 |
0.784 |
|
| 2024-01-12 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.33 |
-14.461 |
4169800 |
0.851 |
1.007 |
-1.535 |
-0.321 |
-0.93 |
0.288 |
-0.019 |
8.441 |
0.691 |
0.134 |
0.037 |
0.834 |
0.128 |
10.159 |
0.54 |
|
| 2024-01-11 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.292 |
31.344 |
4453400 |
0.75 |
1.761 |
-0.319 |
0 |
-0.119 |
0.263 |
0.367 |
7.285 |
0.916 |
0.792 |
22.696 |
0.618 |
0.288 |
15.752 |
0.526 |
|
| 2024-01-10 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.441 |
-16.773 |
3471700 |
1.258 |
2.733 |
-1.29 |
0.321 |
-0.393 |
1.266 |
1.042 |
18.372 |
0.737 |
0.227 |
11.304 |
0.588 |
0.127 |
12.102 |
0.583 |
|
| 2024-01-09 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.642 |
53.517 |
3172200 |
1.506 |
4.663 |
0.263 |
1.12 |
0.485 |
2.16 |
0.119 |
25.342 |
0.838 |
0.236 |
21.397 |
0.614 |
0.433 |
7.73 |
0.651 |
|
| 2024-01-05 |
21:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.404 |
-2.833 |
3148200 |
1.279 |
0.163 |
-3.882 |
-1.73 |
-1.982 |
-0.298 |
-0.466 |
5.337 |
0.937 |
-0.483 |
7.923 |
0.886 |
0.455 |
17.684 |
0.772 |
|
| 2024-01-04 |
19:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.471 |
13.506 |
3319300 |
1.052 |
2.701 |
-0.669 |
0.442 |
-0.131 |
0.633 |
-0.022 |
13.301 |
0.857 |
0.643 |
-4.011 |
0.778 |
0.705 |
19.682 |
0.613 |
|
| 2023-12-29 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.515 |
13.095 |
2783400 |
1.033 |
0.661 |
-2.141 |
0 |
-1.179 |
0.167 |
0.729 |
-12.77 |
1.019 |
1.069 |
25.916 |
1.292 |
0.418 |
16.738 |
0.68 |
|
| 2023-12-28 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.972 |
-38.635 |
1795600 |
2.112 |
6.792 |
-0.224 |
2.159 |
0.319 |
2.508 |
1.861 |
32.326 |
2.078 |
1.189 |
23.936 |
1.246 |
0.578 |
18.568 |
0.727 |
|
| 2023-12-27 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.75 |
103.287 |
2976200 |
2.885 |
7.263 |
-2.114 |
0.974 |
0.135 |
2.451 |
0.798 |
55.221 |
1.472 |
0.211 |
36.411 |
1.059 |
-0.015 |
24.893 |
0.73 |
|
| 2023-12-26 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.154 |
7.155 |
2338100 |
1.218 |
1.917 |
-2.632 |
0.132 |
-0.196 |
0.164 |
-0.558 |
2.972 |
0.779 |
-0.277 |
9.397 |
0.738 |
-0.276 |
5.855 |
0.535 |
|
| 2023-12-25 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.962 |
-1.21 |
2147500 |
0.69 |
0.14 |
-2.287 |
-0.902 |
-1.386 |
-0.605 |
-0.338 |
10.518 |
0.698 |
-0.557 |
4.674 |
0.671 |
-0.013 |
4.593 |
0.732 |
|
| 2023-12-22 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.285 |
22.245 |
2537400 |
1.077 |
2.636 |
-1.398 |
0.163 |
-0.152 |
0.451 |
-0.354 |
7.616 |
0.862 |
-0.088 |
7.777 |
0.677 |
0.226 |
3.485 |
0.642 |
|
| 2023-12-21 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.994 |
-7.014 |
3604600 |
0.739 |
0.411 |
-2.086 |
-1.166 |
-1.363 |
-0.809 |
-0.274 |
0.543 |
0.66 |
0.204 |
0.643 |
0.807 |
0.439 |
1.461 |
0.791 |
|
| 2023-12-20 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.446 |
8.1 |
3749500 |
1.247 |
2.387 |
-1.276 |
0.166 |
-0.622 |
1.553 |
0.802 |
4.472 |
0.951 |
0.613 |
0.731 |
0.926 |
-0.068 |
18.099 |
1.118 |
|
| 2023-12-19 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.159 |
0.844 |
3832600 |
1.945 |
4.7 |
-2.041 |
1.325 |
0.454 |
1.901 |
0.697 |
-2.953 |
1.666 |
0.915 |
2.073 |
1.479 |
-0.21 |
9.779 |
0.996 |
|
| 2023-12-18 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.235 |
-6.75 |
3521000 |
3.863 |
10.112 |
-2.581 |
-0.085 |
-2.025 |
0.127 |
0.793 |
2.687 |
2.771 |
-0.648 |
27.183 |
2.331 |
-0.714 |
27.922 |
1.344 |
|
| 2023-12-15 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.35 |
12.124 |
5659200 |
2.194 |
6.025 |
-1.083 |
1.363 |
-0.379 |
2.254 |
-1.089 |
44.15 |
2.517 |
-0.814 |
18.266 |
1.533 |
-0.567 |
25.488 |
1.255 |
|
| 2023-12-14 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-3.528 |
76.177 |
8865300 |
3.855 |
-0.546 |
-12.716 |
-2.554 |
-4.584 |
-0.867 |
-1.896 |
21.338 |
1.925 |
-1.718 |
44.745 |
2.05 |
-1.283 |
28.529 |
1.356 |
|
| 2023-12-13 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.263 |
-33.502 |
3223600 |
1.684 |
1.843 |
-2.742 |
0.336 |
-1.748 |
0.841 |
-0.813 |
29.03 |
2.121 |
-0.218 |
13.047 |
1.511 |
-1.079 |
18.742 |
0.88 |
|
| 2023-12-12 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.362 |
91.561 |
5441500 |
3.924 |
3.396 |
-9.354 |
0 |
-3.412 |
0.27 |
-0.196 |
36.321 |
1.943 |
-0.874 |
33.323 |
1.348 |
-0.796 |
24.598 |
0.808 |
|
| 2023-12-11 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.97 |
-18.918 |
4402900 |
1.373 |
3.199 |
-1.263 |
1.022 |
0.154 |
1.17 |
-0.631 |
4.205 |
0.898 |
-1.256 |
11.883 |
0.486 |
-0.902 |
6.3 |
0.437 |
|
| 2023-12-08 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.232 |
27.327 |
5870100 |
1.284 |
-0.894 |
-4.357 |
-1.86 |
-3.18 |
-1.029 |
-2.369 |
27.283 |
0.727 |
-1.196 |
16.783 |
0.621 |
-0.919 |
11.755 |
0.505 |
|
| 2023-12-07 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.506 |
27.239 |
3602700 |
1.71 |
1.051 |
-5.365 |
-2.567 |
-2.632 |
-2.2 |
-0.677 |
11.511 |
0.813 |
-1.083 |
7.697 |
0.781 |
-0.611 |
122.364 |
0.745 |
|
| 2023-12-06 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.152 |
-4.218 |
3018500 |
1.2 |
2.756 |
-0.889 |
1.404 |
0.123 |
1.893 |
-0.372 |
-2.074 |
0.718 |
0.048 |
1.403 |
0.543 |
-0.02 |
129.519 |
0.806 |
|
| 2023-12-05 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.895 |
0.071 |
2810700 |
1.863 |
-0.123 |
-6.108 |
-1.705 |
-2.346 |
-0.52 |
-0.503 |
4.214 |
0.854 |
-0.566 |
196.267 |
1.28 |
-0.425 |
126.305 |
0.843 |
|
| 2023-12-04 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.888 |
8.357 |
3095800 |
2.426 |
5.208 |
-1.425 |
0 |
-1.217 |
3.177 |
0.098 |
294.365 |
1.754 |
0.214 |
217.247 |
1.317 |
-0.225 |
125.627 |
0.798 |
|
| 2023-12-01 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.692 |
580.372 |
3294700 |
3.284 |
7.407 |
-3.063 |
-1.708 |
-2.403 |
-0.327 |
-0.124 |
321.691 |
1.602 |
-0.372 |
207.7 |
1.211 |
-0.079 |
123.593 |
1.03 |
|
| 2023-11-30 |
23:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.445 |
63.01 |
4889600 |
1.433 |
2.911 |
-1.365 |
0.153 |
-0.526 |
0.826 |
-0.212 |
21.363 |
0.783 |
-0.441 |
13.136 |
0.48 |
0.173 |
13.067 |
1.001 |
|
| 2023-11-29 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.869 |
-20.283 |
2446500 |
1.856 |
0.146 |
-5.706 |
-0.165 |
-0.667 |
0 |
-0.884 |
-11.801 |
0.872 |
-0.049 |
-8.472 |
1.191 |
0.027 |
-3.433 |
0.714 |
|
| 2023-11-28 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.898 |
-3.319 |
3415600 |
0.849 |
0.153 |
-2.024 |
-0.409 |
-1.621 |
-0.296 |
0.362 |
-2.566 |
2.659 |
0.43 |
7.537 |
1.897 |
0.5 |
0.292 |
1.732 |
|
| 2023-11-27 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.621 |
-1.813 |
3731100 |
5.01 |
14.894 |
-0.777 |
0 |
-0.407 |
0.263 |
1.094 |
12.964 |
2.739 |
0.634 |
2.147 |
1.646 |
0.809 |
10.666 |
2.42 |
|
| 2023-11-24 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.567 |
27.742 |
4212100 |
1.655 |
3.564 |
-1.796 |
0.153 |
-0.654 |
1.741 |
0.14 |
4.126 |
0.814 |
0.593 |
2.197 |
1.155 |
0.384 |
6.556 |
1.312 |
|
| 2023-11-22 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.287 |
-19.489 |
3195300 |
1.469 |
1.864 |
-2.454 |
-0.691 |
-1.061 |
1 |
0.605 |
-10.575 |
1.778 |
0.619 |
9.134 |
2.393 |
0.681 |
20.807 |
1.806 |
|
| 2023-11-21 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.498 |
-1.661 |
3945200 |
3.725 |
10.971 |
-1.807 |
0.61 |
0.133 |
1.411 |
1.072 |
23.445 |
3.801 |
0.547 |
8.176 |
2.338 |
1.104 |
37.255 |
1.978 |
|
| 2023-11-20 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.646 |
48.552 |
5051100 |
3.966 |
10.707 |
-3.255 |
-0.133 |
-0.945 |
0.702 |
0.072 |
13.094 |
1.678 |
0.732 |
41.728 |
2.077 |
1.14 |
38.103 |
1.541 |
|
| 2023-11-17 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.503 |
-22.363 |
3899000 |
1.159 |
0.827 |
-2.341 |
0 |
-1.217 |
0.102 |
0.774 |
38.317 |
1.733 |
1.125 |
46.462 |
1.449 |
0.75 |
35.453 |
1.093 |
|
| 2023-11-16 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.052 |
98.997 |
6028800 |
3.626 |
7.489 |
-1.398 |
-0.236 |
-0.448 |
6.128 |
1.939 |
80.874 |
2.301 |
1.852 |
54.776 |
1.756 |
0.756 |
43.105 |
0.976 |
|
| 2023-11-15 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.825 |
62.752 |
5000600 |
1.975 |
5.734 |
-0.664 |
1.471 |
0.913 |
2.02 |
1.752 |
32.666 |
1.294 |
0.735 |
33.544 |
1.093 |
0.517 |
19.241 |
0.534 |
|
| 2023-11-14 |
23:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.68 |
2.58 |
5696000 |
1.969 |
5.31 |
-0.646 |
1.235 |
0.331 |
2.911 |
0.189 |
18.94 |
1.58 |
-0.033 |
17.925 |
0.812 |
-0.122 |
10.167 |
0.412 |
|
| 2023-11-13 |
17:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.301 |
35.301 |
3829200 |
1.364 |
0.945 |
-2.935 |
-1.491 |
-2.236 |
-1.051 |
-0.889 |
25.598 |
0.708 |
-0.307 |
10.291 |
0.599 |
-0.605 |
2.171 |
0.57 |
|
| 2023-11-10 |
12:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.477 |
15.895 |
3402000 |
1.418 |
1.557 |
-2.986 |
-0.455 |
-0.683 |
0 |
0.189 |
-2.214 |
1.019 |
-0.329 |
4.318 |
0.899 |
0.254 |
8.653 |
0.938 |
|
| 2023-11-09 |
17:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.855 |
-20.323 |
3044100 |
0.921 |
2.534 |
-0.417 |
0.795 |
0.347 |
1.036 |
-0.255 |
-1.47 |
0.688 |
-0.416 |
-13.447 |
0.63 |
0.634 |
4.363 |
0.99 |
|
| 2023-11-08 |
17:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.366 |
17.383 |
5076200 |
0.992 |
0.626 |
-3.154 |
-1.453 |
-1.522 |
-1.048 |
-1.052 |
-10.009 |
0.806 |
0.297 |
15.897 |
1.385 |
0.634 |
7.563 |
1.068 |
|
| 2023-11-07 |
21:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.737 |
-37.4 |
5368400 |
1.208 |
1.249 |
-2.168 |
-0.747 |
-1.499 |
0.228 |
1.129 |
15.154 |
2.098 |
1.226 |
8.251 |
1.656 |
1.014 |
3.733 |
0.949 |
|
| 2023-11-06 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.994 |
67.709 |
11351200 |
3.514 |
11.41 |
-0.348 |
2.114 |
1.501 |
3.213 |
2.208 |
31.076 |
2.167 |
1.758 |
19.277 |
1.521 |
0.713 |
38.852 |
0.883 |
|
| 2023-11-02 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.421 |
-5.556 |
4223000 |
2.754 |
7.711 |
-1.938 |
0.737 |
0 |
2.387 |
1.14 |
-4.939 |
1.157 |
0.938 |
-3.881 |
0.666 |
0.345 |
20.787 |
0.544 |
|
| 2023-11-01 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.858 |
-4.322 |
4150600 |
1.657 |
3.059 |
-2.071 |
1.044 |
0 |
2.257 |
0.696 |
-3.044 |
1.024 |
-0.283 |
44.036 |
0.758 |
-0.455 |
30.477 |
1.128 |
|
| 2023-10-31 |
19:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.534 |
-1.765 |
4480200 |
1.012 |
2.533 |
-0.769 |
0.652 |
-0.159 |
0.904 |
-0.853 |
68.216 |
0.834 |
-0.184 |
37.938 |
0.624 |
-0.537 |
29.943 |
0.832 |
|
| 2023-10-30 |
16:49 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.241 |
138.196 |
9553400 |
1.668 |
-0.155 |
-5.063 |
-2.222 |
-2.934 |
-0.766 |
-0.543 |
57.79 |
0.792 |
-1.222 |
52.824 |
1.332 |
-0.637 |
35.3 |
0.66 |
|
| 2023-10-27 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.154 |
-22.617 |
3765400 |
1.154 |
2.081 |
-1.779 |
1.337 |
1.198 |
1.804 |
-0.713 |
10.138 |
1.944 |
-0.325 |
4.428 |
1.08 |
-0.563 |
9.945 |
0.743 |
|
| 2023-10-26 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.58 |
42.893 |
4032700 |
2.872 |
1.802 |
-8.07 |
-2.035 |
-3.37 |
-1.146 |
-1.065 |
17.95 |
1.446 |
-0.7 |
20.307 |
0.793 |
-0.967 |
17.801 |
0.813 |
|
| 2023-10-25 |
17:45 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.451 |
-6.992 |
3610400 |
2.529 |
6.504 |
-3.064 |
0 |
-0.31 |
0.443 |
0.24 |
9.014 |
1.357 |
-0.462 |
9.816 |
1.338 |
-0.788 |
5.787 |
0.736 |
|
| 2023-10-24 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.029 |
25.021 |
5226400 |
0.878 |
1.437 |
-1.182 |
-0.256 |
-0.514 |
0.82 |
-0.919 |
18.219 |
0.811 |
-0.901 |
17.701 |
0.481 |
-0.644 |
12.812 |
0.392 |
|
| 2023-10-23 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.867 |
11.418 |
3896400 |
1.745 |
0.471 |
-5.123 |
-1.655 |
-2.564 |
-1.014 |
-1.367 |
14.04 |
0.904 |
-1.473 |
3.636 |
0.677 |
-0.616 |
8.013 |
0.51 |
|
| 2023-10-20 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.866 |
16.663 |
4329500 |
1.333 |
1.104 |
-3.299 |
-0.704 |
-1.274 |
0 |
-1.275 |
-0.255 |
0.768 |
-0.46 |
9.207 |
0.695 |
-0.786 |
9.987 |
0.742 |
|
| 2023-10-19 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.685 |
-17.173 |
3292100 |
0.727 |
-0.757 |
-2.974 |
-1.783 |
-1.99 |
-1.023 |
-0.257 |
5.479 |
1.008 |
-0.116 |
3.995 |
0.887 |
-0.986 |
10.044 |
0.893 |
|
| 2023-10-18 |
18:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.171 |
28.13 |
4052200 |
1.823 |
3.48 |
-1.719 |
0.867 |
0.114 |
3.23 |
0.669 |
14.579 |
1.435 |
-0.46 |
16.816 |
1.166 |
-0.14 |
28.23 |
0.969 |
|
| 2023-10-17 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.167 |
1.029 |
3129000 |
2.556 |
2.847 |
-6.108 |
0.638 |
-0.237 |
1.653 |
-1.275 |
11.158 |
2.057 |
-1.472 |
13.087 |
1.712 |
-0.478 |
20.364 |
0.981 |
|
| 2023-10-16 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.718 |
21.288 |
3252500 |
4.124 |
0 |
-13.473 |
-1.325 |
-2.397 |
-0.85 |
-2.292 |
19.117 |
2.516 |
-0.679 |
37.33 |
1.623 |
-0.157 |
24.665 |
1.044 |
|
| 2023-10-13 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.865 |
16.945 |
4099700 |
1.306 |
-0.126 |
-4.031 |
-1.536 |
-2.844 |
-0.958 |
0.34 |
45.351 |
0.823 |
0.054 |
26.501 |
0.523 |
0.317 |
16.419 |
0.458 |
|
| 2023-10-12 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.546 |
73.758 |
3432300 |
2.164 |
6.934 |
0.506 |
2.063 |
0.825 |
3.365 |
1.013 |
31.278 |
1.071 |
1.267 |
28.364 |
0.662 |
1.175 |
5.818 |
0.623 |
|
| 2023-10-11 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.519 |
-11.201 |
2596800 |
0.709 |
0.645 |
-1.524 |
-0.493 |
-1.125 |
-0.2 |
0.627 |
5.666 |
0.441 |
0.301 |
-2.869 |
0.619 |
0.28 |
-2.058 |
0.348 |
|
| 2023-10-10 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.774 |
22.534 |
3297600 |
0.932 |
2.696 |
-0.161 |
2.122 |
1.548 |
2.402 |
0.711 |
1.297 |
0.964 |
1.283 |
-11.155 |
0.623 |
-0.141 |
8.484 |
0.444 |
|
| 2023-10-06 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.352 |
-19.939 |
2679100 |
1.113 |
1.432 |
-1.801 |
-0.423 |
-1.166 |
0.452 |
1.037 |
-28 |
0.834 |
0.048 |
-7.208 |
0.546 |
-0.534 |
0.885 |
0.434 |
|
| 2023-10-05 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.426 |
-36.061 |
3770800 |
1.847 |
6.005 |
0.494 |
1.602 |
1.284 |
3.607 |
0.247 |
-0.843 |
0.962 |
-0.71 |
13.275 |
0.93 |
-0.619 |
11.252 |
0.634 |
|
| 2023-10-04 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.931 |
34.376 |
4818900 |
1.503 |
0.183 |
-4.605 |
-2.104 |
-2.301 |
-0.989 |
-2.278 |
37.943 |
1.406 |
-1.581 |
20.141 |
0.787 |
-1.249 |
20.225 |
0.6 |
|
| 2023-10-03 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.624 |
41.51 |
4216000 |
1.427 |
-0.562 |
-4.747 |
-2.087 |
-3.699 |
-1.667 |
-1.406 |
13.024 |
0.593 |
-1.196 |
19.315 |
0.639 |
-0.71 |
19.732 |
0.53 |
|
| 2023-10-02 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.187 |
-15.463 |
2869700 |
0.906 |
1.645 |
-1.229 |
-0.32 |
-0.982 |
0.2 |
-0.482 |
8.217 |
0.579 |
-0.564 |
8.413 |
0.38 |
-0.42 |
15.534 |
0.211 |
|
| 2023-09-29 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.778 |
31.897 |
4339800 |
0.863 |
0.393 |
-1.926 |
-0.584 |
-1.768 |
-0.111 |
-0.752 |
20.352 |
0.548 |
-0.247 |
24.204 |
0.715 |
-0.168 |
14.951 |
0.246 |
|
| 2023-09-28 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.727 |
8.807 |
4621500 |
0.734 |
0 |
-2.351 |
-0.546 |
-0.954 |
-0.196 |
0.019 |
20.358 |
0.919 |
-0.379 |
20.412 |
0.48 |
-0.024 |
10.782 |
0.274 |
|
| 2023-09-27 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.764 |
31.909 |
3115700 |
1.429 |
3.648 |
-1.165 |
0.698 |
-0.063 |
1.524 |
-0.205 |
26.214 |
0.632 |
0.221 |
11.351 |
0.275 |
-0.178 |
10.092 |
0.249 |
|
| 2023-09-26 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.175 |
20.519 |
2657200 |
1.416 |
0.743 |
-3.52 |
-0.841 |
-0.96 |
-0.515 |
-0.051 |
1.072 |
0.553 |
-0.052 |
4.398 |
0.539 |
-0.569 |
7.383 |
0.4 |
|
| 2023-09-25 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.074 |
-18.375 |
2685000 |
1.375 |
4.577 |
0.179 |
0.498 |
0.299 |
1.133 |
0.509 |
-3.662 |
0.853 |
-0.159 |
-0.656 |
0.471 |
-0.456 |
2.763 |
0.467 |
|
| 2023-09-22 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.055 |
11.051 |
3289200 |
1.107 |
2.196 |
-1.527 |
-0.376 |
-0.618 |
0.276 |
-0.776 |
8.204 |
0.682 |
-0.915 |
11.591 |
0.54 |
-0.58 |
11.944 |
0.708 |
|
| 2023-09-21 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.496 |
5.357 |
3358500 |
0.9 |
-0.4 |
-2.785 |
-1.628 |
-1.957 |
-0.641 |
-1.345 |
11.861 |
0.676 |
-1.1 |
7.047 |
0.987 |
-0.421 |
10.139 |
0.68 |
|
| 2023-09-20 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.193 |
18.366 |
4282900 |
0.897 |
0.456 |
-2.462 |
-1.295 |
-1.456 |
-0.674 |
-0.902 |
7.892 |
1.194 |
-0.449 |
14.437 |
0.958 |
-0.19 |
10.897 |
0.728 |
|
| 2023-09-19 |
08:50 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.611 |
-2.582 |
3132700 |
1.931 |
1.455 |
-4.492 |
-0.536 |
-0.757 |
0.584 |
-0.077 |
12.472 |
1.279 |
0.195 |
8.991 |
0.835 |
0.03 |
8.887 |
0.944 |
|
| 2023-09-15 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.457 |
27.526 |
4867100 |
0.897 |
1.978 |
-0.953 |
0.229 |
0 |
1.212 |
0.598 |
14.778 |
0.546 |
0.285 |
12.9 |
0.614 |
-0.087 |
7.853 |
0.64 |
|
| 2023-09-14 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.739 |
2.029 |
2932500 |
0.629 |
1.538 |
-0.176 |
0.963 |
0.248 |
1.234 |
0.198 |
5.587 |
0.662 |
0.102 |
6.496 |
0.846 |
-0.389 |
8.984 |
0.53 |
|
| 2023-09-13 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.342 |
9.145 |
2679700 |
1.214 |
1.992 |
-2.401 |
-0.493 |
-0.932 |
0.154 |
-0.216 |
8.73 |
1.301 |
-0.544 |
3.236 |
0.917 |
-0.75 |
12.609 |
0.606 |
|
| 2023-09-12 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.091 |
8.314 |
2582400 |
1.584 |
1.48 |
-3.912 |
-0.061 |
-0.158 |
0.805 |
-0.645 |
0.281 |
1.018 |
-0.78 |
11.248 |
0.736 |
-0.676 |
9.564 |
0.51 |
|
| 2023-09-11 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.199 |
-7.751 |
2277600 |
1.034 |
0.797 |
-2.549 |
-1.455 |
-1.805 |
-0.437 |
-1.124 |
12.715 |
0.702 |
-1.106 |
15.195 |
0.657 |
-0.558 |
8.333 |
0.449 |
|
| 2023-09-08 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.05 |
33.182 |
3318100 |
0.782 |
0.425 |
-2.384 |
-1.042 |
-1.544 |
-0.787 |
-1.06 |
26.668 |
0.646 |
-0.697 |
15.753 |
0.513 |
-0.28 |
14.754 |
0.45 |
|
| 2023-09-07 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.07 |
20.153 |
2267800 |
0.762 |
0.035 |
-2.182 |
-0.933 |
-1.611 |
-0.535 |
-0.52 |
7.039 |
0.68 |
-0.181 |
5.411 |
0.523 |
-0.077 |
6.094 |
0.436 |
|
| 2023-09-06 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.03 |
-6.076 |
2599900 |
0.914 |
1.362 |
-1.121 |
-0.12 |
-0.686 |
0.764 |
0.263 |
-1.96 |
0.669 |
0.241 |
6.812 |
0.624 |
0.311 |
12.468 |
0.325 |
|
| 2023-09-05 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.497 |
2.156 |
2834300 |
0.895 |
2.222 |
-0.558 |
0.303 |
-0.24 |
0.904 |
0.346 |
13.256 |
0.634 |
0.219 |
5.464 |
0.474 |
0.33 |
13.382 |
0.311 |
|
| 2023-09-04 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.195 |
24.356 |
2780600 |
1.415 |
3.205 |
-1.316 |
-0.197 |
-0.689 |
0.549 |
0.08 |
7.118 |
0.906 |
0.342 |
22.087 |
0.319 |
0.241 |
14.634 |
0.311 |
|
| 2023-09-01 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.036 |
-10.12 |
2670200 |
0.71 |
0.778 |
-0.993 |
0.241 |
-0.87 |
0.483 |
0.416 |
20.952 |
0.553 |
0.318 |
13.466 |
0.261 |
0.414 |
7.508 |
0.207 |
|
| 2023-08-31 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.868 |
52.023 |
4021900 |
1.44 |
3.604 |
-1.429 |
0.727 |
0.26 |
1.311 |
0.496 |
25.259 |
0.506 |
0.349 |
19.645 |
0.304 |
0.259 |
11.117 |
0.198 |
|
| 2023-08-30 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.124 |
-1.506 |
2085800 |
0.927 |
1.777 |
-1.187 |
0 |
-0.599 |
0.767 |
0.089 |
3.456 |
0.4 |
0.413 |
-1.454 |
0.396 |
0.155 |
3.176 |
0.369 |
|
| 2023-08-29 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.055 |
8.418 |
2152200 |
0.773 |
1.539 |
-1.214 |
-0.085 |
-0.322 |
0.298 |
0.558 |
-1.428 |
0.605 |
0.101 |
1.69 |
0.507 |
0.415 |
1.168 |
0.336 |
|
| 2023-08-28 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.06 |
-11.273 |
2223500 |
0.949 |
2.444 |
-0.444 |
1.057 |
0.365 |
1.896 |
0.123 |
-1.674 |
0.7 |
0.199 |
2.99 |
0.491 |
0.537 |
1.098 |
0.353 |
|
| 2023-08-25 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.814 |
7.926 |
2262800 |
1.01 |
0.364 |
-2.226 |
-0.786 |
-1.603 |
0.244 |
-0.231 |
10.121 |
0.522 |
0.319 |
2.898 |
0.424 |
0.387 |
0.752 |
0.581 |
|
| 2023-08-24 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.351 |
12.316 |
2338400 |
0.432 |
0.974 |
-0.261 |
0.372 |
0 |
0.711 |
0.886 |
0.384 |
0.549 |
0.813 |
2.945 |
0.592 |
0.605 |
-2.347 |
0.577 |
|
| 2023-08-23 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.421 |
-11.548 |
1919200 |
0.996 |
3.269 |
0.368 |
0.923 |
0.774 |
2.009 |
1.044 |
-1.74 |
0.848 |
0.8 |
-5.494 |
1.048 |
0.512 |
-2.534 |
0.74 |
|
| 2023-08-22 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.667 |
8.068 |
2373000 |
0.82 |
2.037 |
-0.717 |
0.531 |
0.304 |
1.167 |
0.49 |
-2.466 |
1.388 |
0.418 |
-4.168 |
0.838 |
-0.157 |
2.085 |
0.604 |
|
| 2023-08-21 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.312 |
-13.001 |
2129600 |
2.466 |
6.55 |
-1.344 |
-0.567 |
-1.05 |
0.246 |
0.293 |
-10.286 |
1.075 |
0.157 |
-3.064 |
0.949 |
-0.323 |
-3.752 |
0.598 |
|
| 2023-08-18 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.274 |
-7.571 |
2857800 |
1.035 |
2.391 |
-1.262 |
0 |
-0.123 |
0.192 |
0.08 |
1.905 |
0.898 |
-0.589 |
5.118 |
0.544 |
-0.773 |
1.599 |
0.711 |
|
| 2023-08-17 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.115 |
11.381 |
3094700 |
1.258 |
1.365 |
-2.392 |
0.032 |
-0.488 |
0.635 |
-1.02 |
11.463 |
0.567 |
-0.734 |
0.605 |
0.497 |
-0.784 |
5.948 |
0.698 |
|
| 2023-08-16 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.925 |
11.546 |
2503300 |
1.521 |
0 |
-5.351 |
-1.704 |
-2.464 |
-1.473 |
-1.044 |
-4.783 |
0.626 |
-1.341 |
1.395 |
1.198 |
-0.857 |
13.343 |
0.926 |
|
| 2023-08-15 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.163 |
-21.112 |
2514900 |
0.759 |
0.743 |
-1.42 |
0 |
-0.768 |
0.42 |
-1.049 |
-3.68 |
1.16 |
-0.627 |
2.272 |
0.886 |
-0.666 |
16.138 |
0.847 |
|
| 2023-08-14 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.935 |
13.751 |
3260100 |
2.423 |
0.858 |
-7.877 |
-1.629 |
-2.121 |
-0.78 |
-0.859 |
13.964 |
1.467 |
-0.732 |
25.427 |
1.188 |
-0.577 |
20.174 |
0.901 |
|
| 2023-08-10 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.217 |
14.177 |
3423000 |
2.035 |
3.125 |
-4.251 |
0.821 |
0 |
1.01 |
-0.131 |
31.264 |
1.142 |
-0.41 |
29.35 |
0.877 |
-0.297 |
13.942 |
0.575 |
|
| 2023-08-09 |
20:55 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.479 |
48.351 |
2893200 |
2.54 |
2.778 |
-5.435 |
-0.421 |
-1.022 |
1.108 |
-0.724 |
36.936 |
1.479 |
-0.389 |
24.314 |
1.048 |
-0.764 |
15.246 |
0.656 |
|
| 2023-08-08 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.968 |
25.521 |
4425100 |
2.008 |
2.5 |
-4.331 |
-1.01 |
-2.329 |
0.156 |
-0.344 |
12.295 |
1.196 |
-0.407 |
2.394 |
0.789 |
-0.793 |
10.826 |
0.671 |
|
| 2023-08-07 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.28 |
-0.932 |
4060500 |
0.605 |
1.408 |
-0.44 |
0.286 |
-0.166 |
0.433 |
-0.127 |
-9.169 |
0.404 |
-0.79 |
0.786 |
0.851 |
-0.524 |
1.431 |
0.348 |
|
| 2023-08-04 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.533 |
-17.407 |
3968400 |
0.894 |
1.037 |
-1.637 |
-0.822 |
-1.085 |
0.287 |
-1.325 |
1.645 |
1.276 |
-1.092 |
9.847 |
0.761 |
-0.277 |
-0.826 |
0.309 |
|
| 2023-08-03 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.117 |
20.697 |
8186000 |
1.996 |
0.22 |
-6.711 |
-1.603 |
-2.412 |
-1.284 |
-1.371 |
23.473 |
0.907 |
-0.789 |
8.498 |
0.405 |
-0.274 |
27.479 |
0.142 |
|
| 2023-08-02 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.626 |
26.249 |
7247900 |
1.171 |
1.596 |
-2.418 |
-1.109 |
-1.282 |
-0.124 |
-0.126 |
2.399 |
0.739 |
0.421 |
-2.474 |
0.759 |
0.165 |
29.384 |
0.423 |
|
| 2023-08-01 |
17:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.375 |
-21.452 |
4022100 |
0.837 |
1.692 |
-0.623 |
0.159 |
-0.369 |
0.916 |
0.944 |
-16.835 |
0.989 |
0.458 |
30.15 |
0.587 |
-0.039 |
29.004 |
0.837 |
|
| 2023-07-31 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.513 |
-12.219 |
4538100 |
1.354 |
3.906 |
0 |
1.141 |
0.251 |
2.482 |
0.499 |
55.951 |
0.614 |
0.359 |
47.374 |
0.419 |
-0.005 |
39.274 |
0.638 |
|
| 2023-07-28 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.515 |
124.12 |
5952000 |
0.756 |
0.293 |
-2.29 |
-0.246 |
-0.746 |
-0.152 |
-0.218 |
77.171 |
0.312 |
-0.694 |
59.563 |
1.208 |
-0.174 |
39.09 |
0.65 |
|
| 2023-07-27 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.079 |
30.221 |
3984600 |
0.965 |
1.55 |
-1.286 |
-0.278 |
-0.419 |
0.817 |
-0.784 |
27.284 |
1.777 |
-0.341 |
28.156 |
0.971 |
-0.265 |
18 |
0.665 |
|
| 2023-07-26 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.646 |
24.347 |
6680700 |
3.671 |
1.11 |
-11.12 |
-0.457 |
-1.623 |
0.126 |
-0.551 |
27.124 |
1.598 |
-0.145 |
13.703 |
1.126 |
-0.572 |
8.585 |
0.767 |
|
| 2023-07-25 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.544 |
29.9 |
4932400 |
1.031 |
2.021 |
-0.952 |
0.438 |
0 |
1.278 |
0.606 |
8.381 |
0.552 |
0.081 |
11.811 |
0.659 |
-0.304 |
9.372 |
1.077 |
|
| 2023-07-24 |
21:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.667 |
-13.137 |
2840200 |
0.816 |
1.942 |
-0.868 |
0.691 |
0.249 |
1.193 |
-0.15 |
2.766 |
0.755 |
-0.585 |
-3.775 |
0.879 |
-0.289 |
4.633 |
1.06 |
|
| 2023-07-21 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.968 |
18.669 |
3728400 |
1.25 |
0.917 |
-2.647 |
-0.715 |
-2.125 |
-0.062 |
-1.212 |
0.906 |
1.219 |
-0.911 |
10.032 |
1.558 |
-0.119 |
12.009 |
0.73 |
|
| 2023-07-20 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.456 |
-16.856 |
3073800 |
1.439 |
0.172 |
-3.787 |
-0.765 |
-2.486 |
-0.612 |
-0.882 |
5.714 |
1.976 |
-0.381 |
5.878 |
1.368 |
0.279 |
4.461 |
0.628 |
|
| 2023-07-19 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.309 |
28.283 |
3520600 |
2.693 |
2.441 |
-6.423 |
0.317 |
-0.364 |
1.302 |
0.157 |
17.245 |
1.525 |
0.609 |
19.411 |
0.917 |
0.182 |
16.457 |
0.604 |
|
| 2023-07-18 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.622 |
6.206 |
2798700 |
1.39 |
2.235 |
-2.493 |
0.711 |
0.158 |
1.411 |
1.068 |
14.975 |
1.68 |
1.053 |
3.625 |
1.185 |
0.269 |
8.345 |
0.697 |
|
| 2023-07-14 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.514 |
23.745 |
4358100 |
4.184 |
12.224 |
-1.866 |
0.313 |
-0.087 |
0.562 |
1.269 |
2.335 |
2.121 |
0.199 |
15.932 |
1.036 |
-0.043 |
11.249 |
0.705 |
|
| 2023-07-13 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.024 |
-19.074 |
2845600 |
1.265 |
3.488 |
-0.807 |
0.632 |
0.348 |
1.902 |
-0.459 |
12.025 |
1.371 |
-0.264 |
3.925 |
0.649 |
-0.552 |
5.645 |
0.525 |
|
| 2023-07-12 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.941 |
43.124 |
3640100 |
3.368 |
3.264 |
-6.137 |
-2.349 |
-3.795 |
-0.938 |
-0.907 |
15.424 |
1.34 |
-0.918 |
17.191 |
0.956 |
-1.105 |
13.084 |
1.02 |
|
| 2023-07-11 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.127 |
-12.275 |
2780500 |
1.788 |
3.463 |
-2.42 |
0.353 |
-0.704 |
0.901 |
-0.407 |
4.225 |
0.761 |
-0.615 |
1.392 |
0.701 |
-0.955 |
4.458 |
0.629 |
|
| 2023-07-10 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.941 |
20.725 |
4259800 |
1.339 |
1.52 |
-2.867 |
-0.732 |
-1.506 |
-0.448 |
-0.986 |
8.226 |
0.973 |
-1.237 |
11.524 |
1.138 |
-1.046 |
7.321 |
0.589 |
|
| 2023-07-07 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.03 |
-4.274 |
4714600 |
0.831 |
0.255 |
-2.448 |
-1.01 |
-1.218 |
-0.604 |
-1.385 |
6.924 |
1.19 |
-1.32 |
4.613 |
1.006 |
-0.747 |
6.067 |
0.648 |
|
| 2023-07-06 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.739 |
18.122 |
3799300 |
1.88 |
0.37 |
-5.766 |
-1.341 |
-1.816 |
-0.83 |
-1.465 |
9.056 |
1.271 |
-1.087 |
6.717 |
0.723 |
-0.562 |
6.714 |
0.563 |
|
| 2023-07-05 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.191 |
-0.009 |
3293300 |
1.466 |
1.067 |
-3.492 |
-0.977 |
-2.612 |
-0.228 |
-0.76 |
1.015 |
1.134 |
-0.322 |
5.496 |
1.043 |
-0.207 |
5.051 |
0.53 |
|
| 2023-07-04 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.33 |
2.039 |
3750700 |
1.594 |
3.723 |
-1.512 |
-0.967 |
-1.148 |
-0.26 |
0.112 |
8.249 |
1.209 |
0.039 |
5.152 |
0.713 |
0.313 |
8.753 |
0.436 |
|
| 2023-07-03 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.554 |
14.459 |
3519800 |
1.572 |
2.248 |
-2.9 |
0.968 |
0 |
1.651 |
0.224 |
6.709 |
0.674 |
0.161 |
7.742 |
0.475 |
0.433 |
16.755 |
0.5 |
|
| 2023-06-30 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.105 |
-1.041 |
4908100 |
0.514 |
0.865 |
-0.685 |
-0.223 |
-0.594 |
0.242 |
-0.035 |
4.383 |
0.558 |
0.447 |
9.088 |
0.443 |
0.315 |
9.67 |
0.729 |
|
| 2023-06-29 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.036 |
9.807 |
6832700 |
1.03 |
2.138 |
-1.657 |
0 |
-0.362 |
0.381 |
0.723 |
14.153 |
0.69 |
0.572 |
23.452 |
0.851 |
0.067 |
15.791 |
0.732 |
|
| 2023-06-28 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.41 |
18.499 |
4615500 |
0.797 |
2.285 |
0 |
1.529 |
1.038 |
2.064 |
0.839 |
30.274 |
1.147 |
0.548 |
13.195 |
1.011 |
-0.246 |
13.85 |
0.918 |
|
| 2023-06-27 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.268 |
42.048 |
3591100 |
1.926 |
3.258 |
-3.02 |
-0.225 |
-0.528 |
1.627 |
0.117 |
10.543 |
1.44 |
-0.371 |
16.883 |
1.123 |
-0.619 |
10.07 |
0.953 |
|
| 2023-06-26 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.035 |
-20.963 |
3381000 |
1.545 |
2.892 |
-2.455 |
0 |
-0.429 |
0.451 |
-0.691 |
4.3 |
0.928 |
-0.969 |
2.9 |
1.06 |
-0.48 |
2.37 |
0.488 |
|
| 2023-06-23 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.346 |
29.563 |
4392400 |
0.873 |
-0.121 |
-2.552 |
-1.203 |
-1.964 |
-0.75 |
-1.436 |
14.832 |
1.13 |
-1.109 |
9.754 |
0.928 |
-0.465 |
-0.478 |
0.435 |
|
| 2023-06-22 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.527 |
0.1 |
3227500 |
1.926 |
0.094 |
-5.43 |
-0.606 |
-3.061 |
-0.07 |
-0.991 |
-0.15 |
1.212 |
-0.339 |
1.084 |
0.346 |
-0.223 |
4.451 |
0.476 |
|
| 2023-06-21 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.455 |
-0.4 |
3752600 |
0.723 |
0.435 |
-1.632 |
-0.014 |
-0.993 |
0 |
0.255 |
1.575 |
0.6 |
0.182 |
-10.685 |
0.593 |
-0.015 |
3.791 |
0.661 |
|
| 2023-06-20 |
17:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.965 |
3.551 |
3509000 |
1.706 |
4.658 |
-0.634 |
0.506 |
-0.281 |
1.351 |
0.501 |
-15.828 |
1.092 |
0.29 |
7.518 |
1.184 |
-0.018 |
-0.149 |
0.638 |
|
| 2023-06-19 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.036 |
-35.206 |
3068000 |
1.43 |
2.883 |
-1.679 |
-0.444 |
-0.745 |
0.73 |
-0.048 |
9.501 |
1.224 |
-0.195 |
5.269 |
0.849 |
0.247 |
5.683 |
0.356 |
|
| 2023-06-16 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.132 |
54.208 |
6365200 |
1.759 |
3.292 |
-2.871 |
-0.484 |
-0.985 |
0 |
-0.31 |
25.506 |
1.321 |
-0.364 |
10.304 |
0.973 |
0.869 |
19.398 |
1.036 |
|
| 2023-06-15 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.489 |
-3.196 |
4130400 |
1.496 |
1.577 |
-3.261 |
-0.121 |
-1.514 |
0.398 |
-0.481 |
-11.648 |
1.196 |
0.444 |
3.137 |
0.704 |
1.102 |
7.982 |
1.175 |
|
| 2023-06-14 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.473 |
-20.1 |
4158900 |
1.697 |
2.118 |
-3.647 |
-0.031 |
-1.513 |
0.364 |
0.91 |
6.304 |
0.808 |
1.654 |
15.326 |
1.572 |
0.786 |
5.823 |
1.038 |
|
| 2023-06-13 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.293 |
32.708 |
4695100 |
2.37 |
6.415 |
0.524 |
1.293 |
0.611 |
2.22 |
2.718 |
33.039 |
3.01 |
2.157 |
21.068 |
2.263 |
0.756 |
24.814 |
1.464 |
|
| 2023-06-12 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
3.143 |
33.371 |
4204800 |
3.749 |
11.532 |
0.949 |
1.553 |
1.149 |
1.86 |
2.088 |
15.248 |
2.261 |
0.703 |
5.503 |
1.376 |
0.238 |
16.728 |
0.953 |
|
| 2023-06-09 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.034 |
-2.875 |
5126600 |
0.982 |
2.968 |
-0.309 |
1.122 |
0.795 |
1.383 |
-0.518 |
-8.432 |
0.698 |
-0.552 |
19.33 |
0.748 |
-0.156 |
18.677 |
0.3 |
|
| 2023-06-08 |
16:56 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.069 |
-13.988 |
4261600 |
1.204 |
-0.434 |
-3.577 |
-2.655 |
-2.883 |
-1.189 |
-1.345 |
30.432 |
0.816 |
-0.995 |
17.714 |
0.254 |
-0.231 |
16.303 |
0.419 |
|
| 2023-06-07 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.621 |
74.852 |
5660100 |
1.189 |
1.093 |
-2.329 |
-0.561 |
-1.372 |
-0.124 |
-0.458 |
33.566 |
0.566 |
0.085 |
36.75 |
0.625 |
0.18 |
16.529 |
0.362 |
|
| 2023-06-06 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.295 |
-7.721 |
3106700 |
1.201 |
1.778 |
-2.3 |
-0.471 |
-0.906 |
0.134 |
0.438 |
17.699 |
1.083 |
0.511 |
6.884 |
1.049 |
-0.194 |
12.493 |
0.722 |
|
| 2023-06-05 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.171 |
43.118 |
4369300 |
1.412 |
3.846 |
-0.763 |
1.021 |
0.306 |
1.846 |
0.914 |
14.187 |
1.167 |
0.605 |
5.171 |
0.698 |
-0.076 |
9.52 |
0.47 |
|
| 2023-06-02 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.656 |
-14.745 |
3263200 |
1.606 |
2.455 |
-2.139 |
1.238 |
0 |
1.651 |
0.323 |
-13.802 |
0.884 |
-0.616 |
9.023 |
1.073 |
-0.25 |
4.13 |
0.397 |
|
| 2023-06-01 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.011 |
-12.86 |
3888500 |
1.148 |
1.893 |
-1.231 |
-0.444 |
-0.796 |
0.891 |
-1.252 |
20.907 |
1.281 |
-0.735 |
6.408 |
0.749 |
-0.331 |
10.052 |
0.597 |
|
| 2023-05-31 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.492 |
54.674 |
5959000 |
1.797 |
0 |
-5.236 |
-2.649 |
-3.827 |
-0.698 |
-1.097 |
16.042 |
0.833 |
-0.631 |
16.085 |
0.789 |
-0.253 |
16.069 |
0.597 |
|
| 2023-05-30 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.298 |
-22.59 |
2727200 |
2.045 |
4.533 |
-2.415 |
-0.41 |
-0.469 |
0.611 |
0.3 |
-3.209 |
1.602 |
0.282 |
2.816 |
1.305 |
0.419 |
41.908 |
1.057 |
|
| 2023-05-29 |
16:54 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.301 |
16.172 |
3458800 |
1.783 |
3.164 |
-1.376 |
-0.43 |
-1.193 |
1.393 |
0.274 |
15.519 |
1.015 |
0.31 |
16.086 |
0.884 |
0.074 |
52.389 |
0.554 |
|
| 2023-05-26 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.247 |
14.865 |
3437500 |
1.738 |
4.456 |
-1.223 |
-0.238 |
-0.846 |
0.276 |
0.315 |
16.043 |
1.124 |
0.498 |
71.985 |
1.044 |
0.219 |
43.13 |
0.654 |
|
| 2023-05-25 |
16:54 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.382 |
17.222 |
4381500 |
1.366 |
2.188 |
-2.326 |
0.647 |
-0.155 |
1.447 |
0.624 |
100.546 |
1.328 |
-0.06 |
76.969 |
0.769 |
0.19 |
55.151 |
0.813 |
|
| 2023-05-24 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.866 |
183.87 |
3028100 |
2.465 |
5.263 |
-2.041 |
-0.108 |
-0.749 |
2.546 |
-0.281 |
106.842 |
1.124 |
0.156 |
61.187 |
0.913 |
0.333 |
51.482 |
0.806 |
|
| 2023-05-23 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.427 |
29.814 |
3205300 |
1.688 |
0.547 |
-4.588 |
-0.89 |
-2.72 |
-0.087 |
-0.199 |
-0.154 |
0.75 |
-0.1 |
24.889 |
0.799 |
0.253 |
15.932 |
0.687 |
|
| 2023-05-22 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.028 |
-30.122 |
3192100 |
1.162 |
3.477 |
-0.409 |
0.923 |
0.526 |
1.368 |
0.563 |
22.426 |
1.295 |
0.741 |
14.576 |
1.187 |
0.699 |
18.424 |
1.287 |
|
| 2023-05-19 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.099 |
74.973 |
5528900 |
2.232 |
4.356 |
-4.412 |
0 |
-0.21 |
0.273 |
0.598 |
36.925 |
1.69 |
0.554 |
26.657 |
1.244 |
0.523 |
26.25 |
1.235 |
|
| 2023-05-18 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.097 |
-1.124 |
3630400 |
2.245 |
6.167 |
-1.244 |
0.121 |
-0.189 |
1.95 |
0.782 |
2.498 |
1.426 |
0.789 |
15.757 |
1.587 |
0.315 |
23.338 |
0.9 |
|
| 2023-05-17 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.468 |
6.121 |
4215900 |
2.54 |
6.283 |
-2.522 |
-0.416 |
-0.875 |
0.852 |
0.634 |
24.198 |
2.568 |
0.473 |
19.133 |
1.802 |
0.189 |
20.949 |
1.082 |
|
| 2023-05-16 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.801 |
42.274 |
4601800 |
2.88 |
6.506 |
-3.577 |
0.297 |
-0.58 |
1.938 |
0.476 |
25.639 |
1.674 |
0.004 |
37.231 |
0.954 |
-0.064 |
17.678 |
0.793 |
|
| 2023-05-15 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.151 |
9.004 |
5300100 |
1.743 |
3.216 |
-3.122 |
0 |
-0.384 |
0.846 |
-0.395 |
34.709 |
0.906 |
-0.107 |
18.783 |
0.847 |
0.016 |
9.395 |
0.719 |
|
| 2023-05-12 |
19:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.942 |
60.415 |
4084400 |
2.075 |
2.29 |
-4.447 |
-0.428 |
-2.827 |
0 |
-0.237 |
23.672 |
1.139 |
-0.425 |
12.371 |
1.04 |
0.168 |
11.287 |
0.877 |
|
| 2023-05-11 |
19:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.469 |
-13.07 |
2035400 |
1.488 |
3.353 |
-1.128 |
0.219 |
-0.36 |
0.406 |
-0.166 |
-11.651 |
0.91 |
0.29 |
-7.481 |
0.971 |
0.426 |
1.964 |
0.647 |
|
| 2023-05-10 |
22:55 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.801 |
-10.231 |
3006700 |
1.037 |
0.595 |
-2.526 |
-0.482 |
-1.729 |
-0.421 |
0.201 |
-4.687 |
1.199 |
0.437 |
3.03 |
0.898 |
0.357 |
-2.46 |
0.452 |
|
| 2023-05-09 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.204 |
0.858 |
3133700 |
1.657 |
3.515 |
-1.029 |
1.431 |
-0.48 |
1.622 |
1.056 |
9.661 |
1.352 |
0.821 |
11.04 |
0.736 |
0.706 |
-2.657 |
0.746 |
|
| 2023-05-08 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.909 |
18.464 |
3183700 |
2.814 |
7.937 |
-2 |
0.289 |
-0.27 |
0.725 |
0.63 |
16.131 |
1.051 |
0.46 |
-0.975 |
0.832 |
0.342 |
16.281 |
0.979 |
|
| 2023-05-02 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.35 |
13.798 |
2557700 |
1.267 |
2.194 |
-2.174 |
0.287 |
0 |
0.976 |
0.236 |
-10.695 |
0.761 |
0.473 |
-10.869 |
0.983 |
-0.272 |
16.946 |
0.969 |
|
| 2023-05-01 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.121 |
-35.187 |
2824100 |
0.893 |
1.532 |
-1.554 |
0.122 |
-0.143 |
0.667 |
0.534 |
-23.202 |
1.082 |
0.15 |
16.38 |
1.203 |
-0.465 |
19.485 |
0.982 |
|
| 2023-04-28 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.947 |
-11.218 |
4447800 |
2.007 |
3.766 |
-3.32 |
1.127 |
0.783 |
1.711 |
0.165 |
42.164 |
1.655 |
-0.61 |
35.373 |
1.334 |
-0.427 |
22.547 |
0.874 |
|
| 2023-04-27 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.618 |
95.546 |
4298200 |
2.086 |
1.417 |
-4.705 |
0.282 |
-1.301 |
0.741 |
-1.388 |
58.668 |
1.501 |
-1.131 |
47.943 |
1.204 |
-0.534 |
33.083 |
0.652 |
|
| 2023-04-26 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.159 |
21.789 |
3130000 |
1.685 |
-0.252 |
-4.655 |
-2.075 |
-3.537 |
-0.564 |
-1.387 |
24.141 |
1.007 |
-0.822 |
9.47 |
0.861 |
-0.273 |
12.786 |
0.638 |
|
| 2023-04-25 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.615 |
26.493 |
2399000 |
0.866 |
0.452 |
-1.767 |
-0.733 |
-1.309 |
0.277 |
-0.154 |
3.31 |
0.899 |
0.035 |
16.027 |
1.04 |
-0.118 |
4.3 |
0.533 |
|
| 2023-04-24 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.308 |
-19.874 |
1833700 |
2.043 |
5.179 |
-2.356 |
-0.277 |
-0.352 |
0.59 |
0.361 |
10.794 |
1.647 |
0.47 |
5.216 |
1.143 |
0.273 |
9.492 |
1.057 |
|
| 2023-04-21 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.414 |
41.463 |
2333000 |
1.818 |
3.286 |
-1.389 |
-0.355 |
-0.901 |
1.545 |
0.551 |
17.76 |
0.835 |
-0.094 |
4.96 |
0.323 |
0.202 |
16.84 |
0.752 |
|
| 2023-04-20 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.688 |
-5.942 |
1899400 |
0.983 |
2.235 |
-0.697 |
0.517 |
0.03 |
1.354 |
-0.348 |
-13.291 |
0.904 |
0.215 |
8.624 |
0.834 |
0.118 |
14.049 |
0.622 |
|
| 2023-04-19 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.384 |
-20.64 |
2247900 |
1.347 |
-0.059 |
-4.293 |
-1.023 |
-1.396 |
-0.506 |
-0.021 |
15.907 |
1.081 |
-0.03 |
16.226 |
0.826 |
-0.205 |
14.417 |
0.751 |
|
| 2023-04-18 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.341 |
52.454 |
3167200 |
3.2 |
7.303 |
-3.116 |
0.553 |
-0.128 |
1.416 |
0.647 |
34.66 |
1.72 |
0.429 |
32.275 |
1.293 |
0.086 |
18.942 |
0.989 |
|
| 2023-04-17 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.048 |
16.865 |
2796100 |
0.715 |
0.659 |
-1.031 |
0.225 |
-0.877 |
0.515 |
-0.027 |
22.186 |
0.792 |
-0.328 |
13.424 |
0.867 |
0.028 |
6.058 |
0.751 |
|
| 2023-04-14 |
15:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.006 |
27.507 |
3603300 |
1.167 |
1.554 |
-2.06 |
0.15 |
-0.175 |
0.892 |
-0.468 |
11.704 |
1.095 |
-0.287 |
8.463 |
1.048 |
0.184 |
9.678 |
0.62 |
|
| 2023-04-13 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.929 |
-4.099 |
2982500 |
1.271 |
0.917 |
-2.366 |
-1.355 |
-1.89 |
0.383 |
-0.428 |
-1.059 |
1.08 |
0.065 |
-4.694 |
0.819 |
0.251 |
2.149 |
0.632 |
|
| 2023-04-12 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.073 |
1.982 |
3003800 |
1.386 |
2.059 |
-2.8 |
0.429 |
-0.683 |
0.809 |
0.561 |
-4.992 |
0.792 |
0.618 |
8.328 |
0.812 |
0.051 |
4.419 |
0.887 |
|
| 2023-04-11 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.05 |
-11.965 |
2984400 |
1.233 |
3.709 |
-0.512 |
0.95 |
0.74 |
1.302 |
0.891 |
11.501 |
1.042 |
0.704 |
4.287 |
0.594 |
-0.418 |
-0.43 |
0.749 |
|
| 2023-04-10 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.732 |
34.966 |
2791100 |
2.762 |
3.411 |
-5.743 |
0.672 |
0.579 |
2.933 |
0.531 |
12.413 |
1.314 |
-0.29 |
10.693 |
1.273 |
-0.724 |
2.668 |
1.011 |
|
| 2023-04-07 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.33 |
-10.14 |
2794200 |
1.409 |
1.769 |
-1.881 |
0.925 |
-0.968 |
1.264 |
-0.8 |
-1.443 |
1.533 |
-1.29 |
-8.384 |
1.205 |
-0.51 |
3.856 |
0.702 |
|
| 2023-04-06 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.931 |
7.253 |
3464000 |
1.839 |
0.403 |
-6.134 |
-1.873 |
-2.32 |
-1.125 |
-2.1 |
-7.505 |
1.234 |
-1.56 |
-3.829 |
1.029 |
-0.27 |
7.964 |
0.853 |
|
| 2023-04-05 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.269 |
-22.264 |
3641800 |
0.851 |
-0.932 |
-3.584 |
-2.116 |
-2.848 |
-1.72 |
-1.374 |
-9.371 |
1.035 |
-0.317 |
7.389 |
1.254 |
0.593 |
20.359 |
1.909 |
|
| 2023-04-04 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.48 |
3.522 |
4316000 |
2.108 |
1.742 |
-4.453 |
0 |
-1.647 |
1.27 |
0.659 |
22.216 |
2.191 |
0.95 |
18.276 |
1.836 |
1.374 |
36.496 |
2.026 |
|
| 2023-04-03 |
20:51 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.799 |
40.91 |
5685000 |
3.551 |
8.465 |
-1.38 |
0.147 |
-0.347 |
2.691 |
1.665 |
25.653 |
2.406 |
1.904 |
40.179 |
3.243 |
1.236 |
32.142 |
1.72 |
|
| 2023-03-31 |
11:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.531 |
10.397 |
4337800 |
1.464 |
4.991 |
-0.125 |
1.132 |
0.973 |
1.672 |
1.957 |
39.813 |
3.195 |
1.85 |
46.016 |
2.131 |
0.9 |
29.019 |
1.25 |
|
| 2023-03-30 |
17:47 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.383 |
69.229 |
3567000 |
5.621 |
16.14 |
-1.201 |
0.142 |
-0.798 |
2.703 |
2.009 |
63.826 |
2.831 |
0.95 |
36.468 |
1.709 |
0.827 |
33.389 |
1.295 |
|
| 2023-03-29 |
17:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.635 |
58.423 |
3648700 |
0.815 |
3.23 |
0.301 |
1.569 |
1.186 |
1.868 |
0.233 |
20.087 |
1.105 |
0.196 |
21.823 |
1.453 |
0.473 |
14.679 |
0.926 |
|
| 2023-03-28 |
18:16 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.169 |
-18.249 |
3080000 |
1.723 |
0.792 |
-4.348 |
-0.595 |
-2.552 |
0 |
-0.524 |
3.524 |
1.961 |
0.038 |
13.097 |
1.421 |
0.402 |
11.237 |
0.716 |
|
| 2023-03-27 |
18:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.12 |
25.297 |
3012400 |
2.919 |
4.096 |
-6.173 |
0.644 |
0.144 |
1.711 |
0.642 |
28.77 |
2.021 |
0.634 |
11.074 |
1.539 |
0.284 |
15.944 |
0.76 |
|
| 2023-03-24 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.164 |
32.244 |
3081700 |
2.319 |
6.79 |
-1.17 |
0.569 |
-0.031 |
0.873 |
0.89 |
3.963 |
1.839 |
1.02 |
16.379 |
1.631 |
0.65 |
9.233 |
1.025 |
|
| 2023-03-23 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.617 |
-24.318 |
3073200 |
1.787 |
4.069 |
-2.361 |
0.654 |
-0.25 |
1.114 |
0.948 |
8.446 |
2.258 |
0.046 |
7.393 |
1.314 |
0.22 |
6.506 |
1.051 |
|
| 2023-03-22 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.279 |
41.21 |
3963500 |
3.645 |
6.957 |
-6.005 |
1.911 |
1.489 |
2.55 |
-0.24 |
23.248 |
1.706 |
0.49 |
12.746 |
1.465 |
0.437 |
8.771 |
1.613 |
|
| 2023-03-20 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.758 |
5.287 |
3420800 |
1.684 |
0.148 |
-4.846 |
-1.827 |
-2.657 |
-0.094 |
0.095 |
-1.486 |
0.8 |
-0.265 |
5.213 |
0.919 |
-0.349 |
4.838 |
1.207 |
|
| 2023-03-17 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.949 |
-8.258 |
3609100 |
2.434 |
6.549 |
-0.749 |
1.358 |
0.563 |
2.428 |
0.481 |
5.176 |
1.435 |
0.888 |
-0.881 |
2.051 |
-0.116 |
3.02 |
1.813 |
|
| 2023-03-16 |
16:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.986 |
18.61 |
3415400 |
1.434 |
1.074 |
-3.393 |
-0.978 |
-1.244 |
-0.409 |
0.358 |
2.808 |
2.176 |
-0.645 |
9.054 |
1.679 |
-0.786 |
16.79 |
1.464 |
|
| 2023-03-15 |
16:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.702 |
-12.994 |
3405600 |
4.082 |
11.978 |
-2.529 |
0.917 |
-0.127 |
1.346 |
-0.474 |
4.276 |
2.245 |
-0.513 |
1.582 |
2.28 |
-0.537 |
10.606 |
1.375 |
|
| 2023-03-14 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.65 |
21.546 |
4382300 |
1.555 |
0 |
-5.166 |
-2.557 |
-3.382 |
-2.019 |
-1.621 |
8.87 |
1.703 |
-1.549 |
26.111 |
1.157 |
-0.895 |
14.577 |
0.876 |
|
| 2023-03-13 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.593 |
-3.806 |
3152800 |
2.475 |
5.136 |
-3.212 |
-0.514 |
-2.493 |
-0.241 |
-0.999 |
28.393 |
1.311 |
-0.579 |
14.825 |
0.947 |
-0.376 |
11.785 |
0.68 |
|
| 2023-03-10 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.405 |
60.592 |
4482200 |
1.4 |
0.242 |
-4.359 |
-1.587 |
-1.892 |
-0.518 |
-0.571 |
24.141 |
0.911 |
-0.41 |
18.382 |
0.999 |
-0.082 |
9.345 |
0.609 |
|
| 2023-03-09 |
16:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.262 |
-12.311 |
2982000 |
0.672 |
0.959 |
-0.701 |
0.635 |
-0.279 |
0.853 |
0.087 |
-2.724 |
0.936 |
0.039 |
0.713 |
0.749 |
0.313 |
5.986 |
0.564 |
|
| 2023-03-08 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.087 |
6.864 |
3292000 |
1.643 |
2.902 |
-2.622 |
0.127 |
-0.829 |
0.652 |
-0.073 |
7.224 |
0.998 |
0.244 |
-0.519 |
0.711 |
-0.007 |
10.034 |
0.705 |
|
| 2023-03-07 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.058 |
7.585 |
3041600 |
0.932 |
1.521 |
-1.354 |
-0.254 |
-0.439 |
0.584 |
0.41 |
-4.21 |
0.595 |
0.464 |
11.793 |
0.463 |
0.174 |
11.387 |
0.836 |
|
| 2023-03-06 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.878 |
-16.005 |
2550100 |
1.188 |
3.531 |
-0.756 |
0.51 |
0.322 |
1.185 |
0.726 |
13.897 |
0.719 |
0.036 |
11.907 |
0.76 |
0.176 |
15.923 |
1.107 |
|
| 2023-03-03 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.573 |
43.798 |
3647900 |
1.014 |
2.335 |
-1.134 |
0.634 |
-0.141 |
0.917 |
-0.385 |
25.864 |
0.964 |
0.017 |
21.784 |
1.294 |
0.164 |
20.266 |
0.873 |
|
| 2023-03-02 |
16:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.343 |
7.929 |
2905800 |
1.194 |
0.059 |
-3.99 |
-0.952 |
-1.593 |
-0.879 |
-0.261 |
10.777 |
1.598 |
-0.19 |
17.275 |
1.492 |
0.366 |
8.582 |
0.622 |
|
| 2023-03-01 |
16:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.822 |
13.626 |
3022500 |
2.296 |
4.108 |
-2.934 |
0.865 |
0.262 |
2.256 |
0.386 |
21.947 |
1.805 |
0.531 |
16.534 |
0.959 |
0.502 |
16.383 |
0.376 |
|
| 2023-02-28 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.05 |
30.269 |
3617700 |
1.812 |
2.703 |
-3.182 |
-0.253 |
-0.812 |
0.906 |
0.385 |
17.987 |
0.635 |
0.784 |
7.118 |
0.673 |
0.368 |
19.151 |
0.623 |
|
| 2023-02-27 |
19:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.821 |
5.706 |
2694400 |
1.513 |
3.356 |
-1.31 |
0.508 |
0 |
1.97 |
1.201 |
-4.457 |
1.352 |
0.579 |
12.674 |
1.141 |
0.396 |
9.488 |
0.859 |
|
| 2023-02-24 |
16:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.581 |
-14.62 |
3062200 |
1.41 |
4.378 |
0.133 |
1.04 |
0.639 |
1.892 |
0.459 |
16.158 |
1.111 |
0.356 |
19.926 |
0.934 |
-0.031 |
6.868 |
0.614 |
|
| 2023-02-22 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.663 |
46.935 |
3096600 |
1.234 |
2.076 |
-2.038 |
-0.534 |
-1.502 |
-0.382 |
-0.256 |
37.199 |
0.881 |
-0.141 |
18.785 |
0.666 |
-0.188 |
12.176 |
0.466 |
|
| 2023-02-21 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.151 |
27.462 |
3185400 |
1.404 |
3.063 |
-1.681 |
0.128 |
-1.009 |
0.575 |
0.12 |
4.71 |
0.923 |
-0.358 |
0.675 |
0.821 |
-0.191 |
24.895 |
0.618 |
|
| 2023-02-20 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.089 |
-18.042 |
2634400 |
0.8 |
1.348 |
-1.125 |
0.256 |
-0.502 |
0.362 |
-0.612 |
-12.718 |
0.749 |
-0.142 |
-4.505 |
0.723 |
-0.233 |
14.153 |
1.559 |
|
| 2023-02-17 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.312 |
-7.394 |
3019100 |
0.933 |
0 |
-2.894 |
-1.043 |
-1.803 |
-0.863 |
-0.258 |
2.264 |
0.945 |
-0.398 |
38.352 |
1.07 |
-0.553 |
18.272 |
1.802 |
|
| 2023-02-16 |
16:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.797 |
11.922 |
3786900 |
1.227 |
2.321 |
-1.257 |
0.871 |
0.14 |
1.667 |
0.059 |
61.225 |
1.475 |
0.02 |
32.067 |
2.641 |
-0.306 |
32.266 |
1.84 |
|
| 2023-02-15 |
16:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.678 |
110.528 |
4430800 |
2.225 |
1.91 |
-4.907 |
-0.804 |
-1.786 |
1.508 |
-0.368 |
42.139 |
3.667 |
-0.749 |
28.944 |
2.768 |
-0.5 |
31.468 |
1.801 |
|
| 2023-02-14 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.057 |
-26.249 |
1981300 |
5.502 |
3.73 |
-14.472 |
1.767 |
0.672 |
1.818 |
-0.785 |
-11.848 |
3.255 |
-0.55 |
12.96 |
2.25 |
-0.257 |
9.77 |
1.582 |
|
| 2023-02-13 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.512 |
2.553 |
2364900 |
1.467 |
0.273 |
-4.161 |
-1.19 |
-2.222 |
-0.365 |
-0.796 |
32.565 |
1.397 |
-0.589 |
24.353 |
1.19 |
-0.34 |
10.314 |
0.991 |
|
| 2023-02-10 |
17:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.081 |
62.576 |
4067600 |
1.79 |
1.477 |
-3.433 |
0.687 |
0.139 |
1.035 |
-0.127 |
35.253 |
1.288 |
0.095 |
24.181 |
0.813 |
-0.126 |
10.82 |
0.914 |
|
| 2023-02-09 |
20:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.174 |
7.929 |
3022300 |
0.96 |
1.499 |
-1.344 |
-0.425 |
-0.963 |
0.296 |
0.183 |
4.984 |
0.667 |
-0.036 |
-4.52 |
0.877 |
-0.003 |
3.08 |
0.548 |
|
| 2023-02-08 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.539 |
2.039 |
4007000 |
1.123 |
2.644 |
-1.357 |
0.526 |
0 |
1.245 |
0.033 |
-10.745 |
1.052 |
-0.126 |
-5.468 |
0.971 |
0.197 |
3.685 |
0.556 |
|
| 2023-02-07 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.473 |
-23.529 |
3953200 |
2.537 |
2.351 |
-6.652 |
-0.295 |
-0.523 |
0.65 |
-0.458 |
-9.222 |
1.67 |
-0.127 |
1.81 |
0.829 |
0.199 |
1.997 |
0.489 |
|
| 2023-02-06 |
16:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.444 |
5.086 |
5240800 |
1.441 |
1.987 |
-2.51 |
-0.429 |
-1.766 |
0.394 |
0.046 |
14.48 |
1.114 |
0.306 |
13.305 |
0.659 |
0.313 |
8.929 |
0.441 |
|
| 2023-02-03 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.535 |
23.874 |
4792900 |
2.042 |
5.055 |
-1.608 |
0.134 |
-0.683 |
1.012 |
0.681 |
17.414 |
0.864 |
0.637 |
9.477 |
0.7 |
0.614 |
9.877 |
0.423 |
|
| 2023-02-02 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.827 |
10.954 |
3886800 |
1.713 |
3.616 |
-1.728 |
0.549 |
-0.064 |
1.17 |
0.688 |
2.278 |
0.802 |
0.491 |
5.228 |
0.812 |
0.411 |
2.006 |
0.529 |
|
| 2023-02-01 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.55 |
-6.398 |
2712100 |
1.132 |
2.775 |
-0.87 |
0.416 |
-0.096 |
1.22 |
0.324 |
2.364 |
0.879 |
0.57 |
4.853 |
0.65 |
0.236 |
17.695 |
0.99 |
|
| 2023-01-31 |
21:20 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.097 |
11.127 |
4010600 |
1.612 |
2.27 |
-2.7 |
0.688 |
-0.832 |
0.752 |
0.58 |
10.478 |
0.765 |
0.226 |
1.825 |
0.741 |
0.343 |
13.621 |
0.76 |
|
| 2023-01-30 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.063 |
9.829 |
3002300 |
0.883 |
2.546 |
0.032 |
0.839 |
0.427 |
1.445 |
0.29 |
-2.826 |
0.618 |
0.178 |
27.916 |
1.306 |
0.814 |
27.099 |
0.867 |
|
| 2023-01-27 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.483 |
-15.48 |
3580800 |
1.535 |
2.052 |
-3.102 |
-0.426 |
-1.243 |
0.608 |
-0.264 |
36.959 |
1.733 |
0.185 |
15.716 |
0.893 |
0.789 |
27.348 |
0.89 |
|
| 2023-01-26 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.045 |
89.398 |
3594400 |
3.692 |
9.408 |
-2.834 |
-0.754 |
-1.947 |
-0.532 |
0.519 |
31.314 |
1.81 |
1.164 |
47.049 |
1.697 |
1.204 |
33.575 |
1.658 |
|
| 2023-01-25 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.083 |
-26.771 |
2789000 |
2.076 |
5.975 |
-1.34 |
0.787 |
0.543 |
1.228 |
1.769 |
25.874 |
2.036 |
1.492 |
20.94 |
1.542 |
1.159 |
15.863 |
1.879 |
|
| 2023-01-24 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.454 |
78.52 |
4189600 |
2.367 |
5.925 |
-1.583 |
2.196 |
1.236 |
3.101 |
1.696 |
44.795 |
1.625 |
1.66 |
35.083 |
1.928 |
1.189 |
25.539 |
1.529 |
|
| 2023-01-23 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.938 |
11.071 |
2901300 |
1.467 |
2.823 |
-1.857 |
1.084 |
0.637 |
1.94 |
1.263 |
13.365 |
1.975 |
0.752 |
9.189 |
2.01 |
0.834 |
171.689 |
0.66 |
|
| 2023-01-20 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.588 |
15.659 |
3742600 |
3.696 |
11.379 |
-0.298 |
0.575 |
0.067 |
0.842 |
0.659 |
8.249 |
2.929 |
0.851 |
12.701 |
1.919 |
0.06 |
163.773 |
0.591 |
|
| 2023-01-19 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.27 |
0.839 |
3005600 |
2.365 |
5.211 |
-2.478 |
-1.082 |
-1.618 |
0 |
0.483 |
11.222 |
1.103 |
0.547 |
277.239 |
0.486 |
-0.305 |
163.77 |
1.211 |
|
| 2023-01-18 |
18:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.237 |
21.605 |
3014100 |
0.722 |
2.541 |
0.448 |
0.996 |
0.655 |
1.57 |
0.956 |
415.438 |
1.735 |
-0.34 |
267.456 |
2.774 |
-0.2 |
161.356 |
1.606 |
|
| 2023-01-17 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.675 |
809.272 |
4380800 |
3.294 |
4.124 |
-7.5 |
1.517 |
0.632 |
2.294 |
-1.128 |
390.382 |
4.088 |
-0.83 |
265.469 |
2.631 |
-0.002 |
166.954 |
1.769 |
|
| 2023-01-16 |
17:19 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-2.931 |
-28.508 |
2670900 |
5.238 |
0.164 |
-16.484 |
-1.751 |
-2.242 |
-0.145 |
-1.582 |
-6.432 |
2.504 |
-0.97 |
-8.033 |
1.757 |
0.445 |
17.94 |
0.91 |
|
| 2023-01-13 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.233 |
15.644 |
3360000 |
1.08 |
1.672 |
-1.362 |
-0.314 |
-1.122 |
0.552 |
0.01 |
2.205 |
1.007 |
0.749 |
18.003 |
1.405 |
1.25 |
23.718 |
1.191 |
|
| 2023-01-12 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.254 |
-11.234 |
3399800 |
1.919 |
4.648 |
-1.644 |
-0.26 |
-1.118 |
0.556 |
1.24 |
19.182 |
2.099 |
1.796 |
34.189 |
2.001 |
1.201 |
23.3 |
1.118 |
|
| 2023-01-11 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.225 |
49.598 |
4096000 |
2.544 |
8.455 |
-0.417 |
1.866 |
1.384 |
2.45 |
2.567 |
56.9 |
2.494 |
2.076 |
38.061 |
1.747 |
0.816 |
29.929 |
1.246 |
|
| 2023-01-10 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
2.908 |
64.202 |
3964900 |
4.817 |
12.516 |
-0.519 |
0.653 |
0.169 |
1.945 |
2.001 |
32.292 |
2.769 |
1.175 |
26.045 |
1.688 |
0.316 |
18.625 |
1.338 |
|
| 2023-01-06 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
1.094 |
0.382 |
2820100 |
1.2 |
2.83 |
-1.459 |
1.429 |
0.614 |
1.688 |
0.309 |
6.966 |
0.7 |
-0.351 |
11.948 |
0.946 |
-0.171 |
7.182 |
0.793 |
|
| 2023-01-05 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.476 |
13.55 |
2644200 |
1.011 |
1.286 |
-2.003 |
-0.519 |
-1.155 |
0.154 |
-1.073 |
17.73 |
1.255 |
-0.808 |
9.514 |
1.171 |
-0.5 |
26.551 |
0.817 |
|
| 2023-01-04 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-1.671 |
21.911 |
2883400 |
2.319 |
1.697 |
-6.069 |
-1.738 |
-2.406 |
-0.13 |
-0.974 |
7.496 |
1.636 |
-0.49 |
7.327 |
1.294 |
-0.304 |
15.668 |
0.637 |
|
| 2022-12-30 |
16:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
-0.277 |
-6.919 |
1982900 |
1.232 |
0.957 |
-2.635 |
0.13 |
-0.784 |
0.605 |
0.1 |
0.035 |
1.19 |
-0.18 |
25.987 |
0.867 |
0.203 |
3.56 |
0.652 |
|
| 2022-12-29 |
16:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
9 |
0.476 |
6.988 |
2266100 |
1.635 |
3.265 |
-2.009 |
0 |
-0.335 |
1.129 |
-0.139 |
36.373 |
0.889 |
0.077 |
19.69 |
0.486 |
-0.147 |
6.127 |
0.449 |
|
| 2022-12-28 |
17:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.692 |
55.016 |
3176200 |
1.179 |
0.813 |
-2.778 |
-0.411 |
-1.021 |
-0.186 |
-0.1 |
24.947 |
0.386 |
0.28 |
5.346 |
0.51 |
-0.233 |
1.871 |
0.516 |
|
| 2022-12-27 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.491 |
-5.122 |
2109700 |
1.092 |
2.73 |
-0.806 |
0.338 |
-0.25 |
1.061 |
0.765 |
-19.489 |
1.175 |
-0.158 |
-10.395 |
0.521 |
-0.437 |
-8.442 |
0.501 |
|
| 2022-12-26 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.04 |
-33.856 |
2955500 |
1.945 |
6.259 |
-0.469 |
0.536 |
-0.029 |
1.265 |
-0.482 |
-13.032 |
1.013 |
-0.322 |
-13.513 |
0.797 |
-1.036 |
4.19 |
0.938 |
|
| 2022-12-23 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.003 |
7.792 |
4891400 |
2.14 |
0.39 |
-5.764 |
-1.332 |
-3.549 |
-0.276 |
-1.002 |
-3.341 |
1.662 |
-1.239 |
-1.078 |
1.277 |
-1.306 |
6.218 |
1.05 |
|
| 2022-12-22 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.001 |
-14.474 |
4069800 |
1.598 |
1.623 |
-3.99 |
0.458 |
-0.44 |
0.979 |
-0.857 |
-5.512 |
0.97 |
-1.405 |
15.672 |
1.094 |
-1.225 |
16.506 |
0.873 |
|
| 2022-12-21 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.713 |
3.45 |
5357200 |
1.4 |
0 |
-3.836 |
-1.551 |
-2.447 |
-0.511 |
-2.107 |
30.745 |
1.421 |
-1.509 |
12.591 |
1.202 |
-1.025 |
27.598 |
0.879 |
|
| 2022-12-20 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.501 |
58.039 |
5562300 |
1.805 |
0.046 |
-5.852 |
-2.69 |
-3.448 |
-1.171 |
-1.407 |
17.161 |
1.221 |
-1.47 |
31.185 |
0.994 |
-0.231 |
30.64 |
0.881 |
|
| 2022-12-19 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.312 |
-23.717 |
4232600 |
2.176 |
3.312 |
-5.103 |
-0.324 |
-0.701 |
0 |
-0.955 |
17.758 |
1.215 |
-0.304 |
25.5 |
1.145 |
0.169 |
25.829 |
0.985 |
|
| 2022-12-16 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.597 |
59.234 |
6520100 |
1.231 |
-0.046 |
-4.268 |
-1.668 |
-1.869 |
-0.655 |
-0.3 |
50.108 |
1.04 |
0.553 |
39.626 |
1.257 |
0.169 |
26.465 |
0.594 |
|
| 2022-12-15 |
16:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.997 |
40.983 |
4730500 |
2.874 |
8.179 |
-1.671 |
0.196 |
-0.344 |
0.3 |
1.628 |
29.822 |
2.32 |
0.919 |
31.21 |
1.39 |
0.925 |
21.741 |
1.017 |
|
| 2022-12-14 |
16:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.259 |
18.662 |
5960100 |
1.987 |
6.461 |
-0.092 |
1.74 |
0.992 |
3.324 |
0.88 |
26.323 |
0.845 |
0.482 |
10.704 |
0.411 |
0.521 |
18.188 |
0.29 |
|
| 2022-12-13 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.5 |
33.984 |
5266700 |
1.166 |
0.391 |
-3.571 |
-0.214 |
-0.706 |
0.214 |
-0.407 |
6.724 |
0.745 |
0.457 |
16.353 |
0.522 |
0.059 |
15.037 |
0.494 |
|
| 2022-12-12 |
16:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.314 |
-20.536 |
5107000 |
1.28 |
1.247 |
-3.238 |
-0.141 |
-0.43 |
0.368 |
0.935 |
7.538 |
1.256 |
0.282 |
12.764 |
0.569 |
0.196 |
9.251 |
0.922 |
|
| 2022-12-09 |
16:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.185 |
35.611 |
6356800 |
2.39 |
7.507 |
0 |
1.428 |
0.448 |
2.716 |
0.58 |
29.414 |
0.635 |
0.37 |
20.579 |
0.68 |
0.138 |
11.896 |
1.195 |
|
| 2022-12-08 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.026 |
23.216 |
4473400 |
1.75 |
1.786 |
-4.604 |
-0.654 |
-1.873 |
-0.096 |
-0.537 |
13.062 |
1.036 |
-0.297 |
10.393 |
0.891 |
-0.418 |
14.639 |
1.345 |
|
| 2022-12-07 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.049 |
2.909 |
5499000 |
1.366 |
2.356 |
-1.828 |
0 |
-1.148 |
0.815 |
0.067 |
3.981 |
1.672 |
-0.157 |
0.218 |
1.809 |
-0.225 |
3.779 |
1.471 |
|
| 2022-12-06 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.182 |
5.054 |
4129300 |
2.516 |
6.259 |
-2.711 |
-0.042 |
-1.084 |
0.405 |
-0.211 |
-1.127 |
2.251 |
-0.339 |
15.69 |
2.291 |
-0.313 |
10.732 |
1.309 |
|
| 2022-12-05 |
16:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.603 |
-7.308 |
4174800 |
2.409 |
5.425 |
-3.599 |
-1.122 |
-1.882 |
0 |
-0.599 |
21.009 |
2.347 |
-0.419 |
3.644 |
1.462 |
-0.47 |
13.365 |
1.105 |
|
| 2022-12-02 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.594 |
49.325 |
4615200 |
2.506 |
6.065 |
-2.511 |
-1.487 |
-1.948 |
-0.298 |
-0.327 |
9.12 |
1.214 |
-0.381 |
18.638 |
0.826 |
-0.321 |
28.822 |
0.639 |
|
| 2022-12-01 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.06 |
-31.085 |
3872700 |
0.732 |
1.294 |
-1.077 |
-0.225 |
-0.526 |
0.477 |
-0.274 |
3.295 |
0.521 |
-0.383 |
8.27 |
0.432 |
-0.114 |
17.941 |
0.567 |
|
| 2022-11-30 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.488 |
37.674 |
7404600 |
0.7 |
0.845 |
-1.385 |
-0.816 |
-0.911 |
0.023 |
-0.545 |
27.948 |
0.693 |
-0.317 |
41.957 |
0.742 |
0.152 |
22.532 |
0.704 |
|
| 2022-11-29 |
16:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.602 |
18.221 |
4991400 |
1.59 |
2.5 |
-3.404 |
-0.806 |
-1.328 |
-0.003 |
-0.231 |
44.098 |
1.182 |
-0.007 |
27.705 |
1.038 |
0.395 |
19.285 |
0.723 |
|
| 2022-11-28 |
16:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.14 |
69.976 |
4617100 |
2.228 |
5.563 |
-2.457 |
-0.07 |
-1.036 |
0.585 |
0.291 |
32.447 |
1.354 |
0.617 |
18.921 |
1.228 |
0.802 |
15.863 |
1.025 |
|
| 2022-11-25 |
16:54 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.441 |
-5.082 |
3490400 |
1.489 |
2.669 |
-1.128 |
-0.19 |
-0.555 |
1.792 |
0.856 |
-6.607 |
1.252 |
0.813 |
2.742 |
1.079 |
1.18 |
17.939 |
1.504 |
|
| 2022-11-24 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.27 |
-8.132 |
3585400 |
1.274 |
3.808 |
0 |
0.78 |
0.452 |
1.554 |
0.999 |
6.654 |
1.077 |
1.142 |
4.807 |
1.469 |
0.994 |
16.097 |
1.128 |
|
| 2022-11-22 |
16:54 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.727 |
21.44 |
3803200 |
1.921 |
3.908 |
-2.61 |
0.581 |
0.058 |
1.29 |
1.078 |
11.276 |
1.972 |
1.397 |
34.303 |
1.709 |
0.764 |
19.636 |
1.043 |
|
| 2022-11-21 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.429 |
1.113 |
3189900 |
2.484 |
6.456 |
-1.236 |
0.27 |
0 |
2.201 |
1.732 |
40.735 |
2.434 |
0.991 |
22.393 |
1.569 |
0.908 |
19.614 |
1.545 |
|
| 2022-11-18 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.034 |
80.357 |
4416400 |
3.844 |
12.5 |
-0.511 |
0.973 |
0.19 |
1.48 |
0.772 |
33.033 |
2.103 |
0.555 |
25.209 |
1.687 |
0.37 |
16.118 |
1.403 |
|
| 2022-11-17 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.491 |
-14.291 |
2870300 |
1.054 |
0.787 |
-2.418 |
-0.235 |
-0.745 |
0.128 |
-0.184 |
-2.364 |
0.928 |
0.359 |
5.534 |
1.53 |
0.311 |
18.286 |
1.066 |
|
| 2022-11-16 |
17:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.122 |
9.562 |
4201500 |
1.232 |
2.585 |
-2.041 |
-0.016 |
-0.46 |
0.587 |
0.784 |
15.446 |
2.103 |
0.102 |
4.842 |
1.259 |
0.152 |
16.541 |
0.953 |
|
| 2022-11-15 |
16:55 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.445 |
21.331 |
3700100 |
3.255 |
6.54 |
-3.922 |
0.813 |
-0.489 |
3.86 |
0.091 |
2.481 |
1.521 |
0.641 |
32.053 |
1.41 |
0.081 |
17.869 |
0.799 |
|
| 2022-11-14 |
17:07 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.263 |
-16.368 |
4433500 |
1.271 |
0.727 |
-3.519 |
-1.46 |
-1.967 |
-0.231 |
0.239 |
37.414 |
0.822 |
-0.269 |
17.271 |
0.597 |
-0.099 |
9.645 |
0.509 |
|
| 2022-11-11 |
22:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.741 |
91.196 |
5054000 |
1.457 |
3.731 |
-0.162 |
1.7 |
0.477 |
2.935 |
0.228 |
34.09 |
0.657 |
0.073 |
28.128 |
0.601 |
0.32 |
23.59 |
1.072 |
|
| 2022-11-10 |
16:56 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.284 |
-23.015 |
4564200 |
0.823 |
0 |
-2.534 |
-1.255 |
-1.68 |
-0.681 |
-0.76 |
-3.406 |
0.924 |
-0.324 |
-8.867 |
0.526 |
-0.216 |
7.971 |
0.883 |
|
| 2022-11-09 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.236 |
16.203 |
4865400 |
1.292 |
1.623 |
-2.315 |
-0.224 |
-1.132 |
0.556 |
0.156 |
-1.794 |
0.593 |
0.381 |
16.589 |
1.528 |
-0.142 |
18.34 |
0.779 |
|
| 2022-11-08 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.548 |
-19.79 |
3480900 |
1.645 |
2.389 |
-3.448 |
0.734 |
0.077 |
1.503 |
0.69 |
16.782 |
1.962 |
0.147 |
15.556 |
1.028 |
-0.12 |
6.889 |
0.679 |
|
| 2022-11-07 |
16:55 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.832 |
53.354 |
4999000 |
3.861 |
4.743 |
-8.933 |
1.304 |
0.037 |
3.156 |
-0.053 |
33.23 |
1.71 |
-0.341 |
31.762 |
1.153 |
0.243 |
3.855 |
0.743 |
|
| 2022-11-04 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.938 |
13.105 |
5322900 |
1.352 |
1.078 |
-3.407 |
-0.782 |
-1.73 |
-0.012 |
-0.927 |
20.966 |
1.222 |
-0.661 |
0.294 |
1.02 |
0.064 |
58.066 |
0.544 |
|
| 2022-11-02 |
16:51 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.916 |
28.827 |
4887700 |
1.471 |
1.917 |
-3.135 |
-1.231 |
-1.825 |
0.034 |
-0.522 |
-6.112 |
1.104 |
0.44 |
-15.727 |
0.79 |
0.377 |
55.864 |
0.583 |
|
| 2022-11-01 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.129 |
-41.05 |
5760200 |
0.955 |
0.931 |
-2.353 |
0 |
-0.267 |
0.487 |
1.118 |
-38.004 |
0.9 |
0.725 |
82.799 |
0.69 |
0.563 |
49.544 |
0.659 |
|
| 2022-10-31 |
16:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.365 |
-34.958 |
9172600 |
1.528 |
5.025 |
-0.092 |
2.324 |
1.58 |
3.322 |
1.152 |
144.724 |
1.34 |
0.977 |
97.181 |
1.319 |
0.955 |
62.509 |
0.883 |
|
| 2022-10-28 |
16:53 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.06 |
324.405 |
23701800 |
2.42 |
6.19 |
-2.452 |
-0.624 |
-1.336 |
0.44 |
0.283 |
163.251 |
1.928 |
0.193 |
107.91 |
1.301 |
0.854 |
82.93 |
0.956 |
|
| 2022-10-27 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.626 |
2.097 |
5042000 |
1.652 |
5 |
-1.199 |
0.388 |
0 |
0.666 |
0.319 |
-0.337 |
0.857 |
0.823 |
7.7 |
0.851 |
0.812 |
16.305 |
0.856 |
|
| 2022-10-26 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.013 |
-2.772 |
4953400 |
0.991 |
1.109 |
-2.151 |
0.236 |
-0.485 |
0.655 |
0.921 |
10.501 |
1.32 |
1.235 |
29.382 |
1.463 |
0.511 |
17.137 |
0.813 |
|
| 2022-10-25 |
17:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.829 |
23.774 |
5063000 |
2.232 |
7.22 |
-0.658 |
1.954 |
0.187 |
2.326 |
1.846 |
45.459 |
1.968 |
1.141 |
27.401 |
1.335 |
0.534 |
13.114 |
0.772 |
|
| 2022-10-24 |
17:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.862 |
67.144 |
4461700 |
2.033 |
6.334 |
-0.092 |
1.288 |
0.435 |
3.053 |
0.797 |
29.214 |
1.106 |
0.238 |
21.561 |
0.541 |
0.258 |
14.491 |
0.6 |
|
| 2022-10-21 |
16:45 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.268 |
-8.716 |
6005400 |
1.037 |
1.972 |
-1.97 |
-0.164 |
-0.874 |
0 |
-0.573 |
-1.23 |
0.508 |
-0.341 |
-8.449 |
0.402 |
-0.283 |
2.692 |
0.571 |
|
| 2022-10-20 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.879 |
6.255 |
4256900 |
0.744 |
0 |
-2.292 |
-0.714 |
-1.363 |
-0.38 |
-0.377 |
-8.316 |
0.889 |
-0.102 |
4.676 |
0.6 |
0.21 |
8.163 |
0.683 |
|
| 2022-10-19 |
16:45 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.124 |
-22.887 |
4559800 |
1.745 |
3.9 |
-3.035 |
0.234 |
-0.521 |
0.539 |
0.286 |
3.886 |
1.065 |
-0.09 |
5.307 |
1.085 |
0.235 |
3.382 |
0.826 |
|
| 2022-10-18 |
16:47 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.449 |
30.659 |
8775200 |
1.589 |
2.821 |
-2.435 |
0.276 |
0.023 |
1.061 |
-0.197 |
19.404 |
1.122 |
0.602 |
19.149 |
0.901 |
0.069 |
8.76 |
0.4 |
|
| 2022-10-17 |
16:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.843 |
8.149 |
4597100 |
1.582 |
0.669 |
-4.762 |
-0.6 |
-0.954 |
0.034 |
0.679 |
13.395 |
1.099 |
0.2 |
3.046 |
0.81 |
-0.625 |
5.816 |
0.549 |
|
| 2022-10-14 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.201 |
18.64 |
6046700 |
1.428 |
4.48 |
0 |
1.914 |
1.508 |
3.086 |
0.722 |
0.494 |
0.746 |
0.246 |
1.665 |
0.291 |
-0.432 |
6.231 |
0.449 |
|
| 2022-10-13 |
16:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.757 |
-17.652 |
5583200 |
1.051 |
1.146 |
-2.054 |
-0.881 |
-1.6 |
-0.051 |
-0.732 |
-6.823 |
0.853 |
-1.494 |
0.763 |
1.074 |
-0.636 |
5.113 |
0.614 |
|
| 2022-10-12 |
16:49 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.707 |
4.006 |
6269700 |
1.582 |
2.097 |
-2.748 |
-0.57 |
-2.094 |
0.069 |
-1.863 |
9.971 |
1.415 |
-1.202 |
10.055 |
1.113 |
-0.488 |
5.914 |
0.642 |
|
| 2022-10-11 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.018 |
15.935 |
6544500 |
2.158 |
-0.046 |
-6.628 |
-3.046 |
-3.766 |
-1.816 |
-1.449 |
13.079 |
1.074 |
-0.572 |
13.071 |
0.616 |
0.207 |
9.952 |
0.582 |
|
| 2022-10-07 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.121 |
10.223 |
5596700 |
2.348 |
6.29 |
-2.083 |
-0.261 |
-1.309 |
0.427 |
0.651 |
11.639 |
1.377 |
0.429 |
3.21 |
1.008 |
1.064 |
5.923 |
1.116 |
|
| 2022-10-06 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.182 |
13.055 |
5178600 |
0.884 |
3.288 |
0 |
1.022 |
0.702 |
1.326 |
0.583 |
-0.297 |
0.89 |
1.31 |
7.868 |
1.133 |
0.634 |
5.171 |
0.67 |
|
| 2022-10-05 |
16:42 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.017 |
-13.649 |
6100600 |
1.326 |
1.531 |
-2.683 |
0.104 |
-0.713 |
1.028 |
1.374 |
5.274 |
1.506 |
1.339 |
2.113 |
1.283 |
0.639 |
-0.347 |
0.651 |
|
| 2022-10-04 |
16:52 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.765 |
24.197 |
6859400 |
2.344 |
6.945 |
-1.711 |
3.064 |
2.2 |
3.781 |
2.017 |
9.994 |
1.642 |
0.669 |
8.816 |
0.762 |
0.619 |
9.375 |
0.497 |
|
| 2022-10-03 |
16:40 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.269 |
-4.21 |
5945800 |
1.536 |
4.188 |
-0.998 |
1.38 |
0.278 |
2.066 |
-0.379 |
1.125 |
0.539 |
0.149 |
-4.095 |
0.759 |
0.184 |
2.333 |
0.574 |
|
| 2022-09-30 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.028 |
6.459 |
9584000 |
1.711 |
0.941 |
-4.068 |
-2.462 |
-3.283 |
-0.642 |
-0.411 |
-4.038 |
1.153 |
-0.314 |
8.962 |
1.032 |
-0.7 |
15.135 |
0.924 |
|
| 2022-09-29 |
16:49 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.207 |
-14.535 |
10173600 |
1.533 |
4.248 |
-1.437 |
1.33 |
0.264 |
1.839 |
0.543 |
10.214 |
0.9 |
0.56 |
3.138 |
0.769 |
-0.3 |
14.648 |
0.667 |
|
| 2022-09-28 |
16:42 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.121 |
34.963 |
10429000 |
1.412 |
2.297 |
-2.586 |
-0.14 |
-0.504 |
0.161 |
0.237 |
11.975 |
0.687 |
-0.892 |
27.916 |
1.045 |
-0.878 |
15.693 |
0.81 |
|
| 2022-09-27 |
16:47 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.594 |
-11.013 |
12582300 |
1 |
2.128 |
-1.473 |
0.61 |
0.159 |
1.104 |
-1.278 |
24.393 |
1.093 |
-0.862 |
17.604 |
0.745 |
-0.677 |
7.759 |
0.612 |
|
| 2022-09-26 |
16:42 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.15 |
59.799 |
7897900 |
2.562 |
-0.092 |
-7.723 |
-2.955 |
-5.064 |
-0.863 |
-1.589 |
31.913 |
1.15 |
-1.621 |
18.171 |
1.037 |
-1.063 |
21.245 |
0.816 |
|
| 2022-09-22 |
16:45 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.029 |
4.027 |
7923600 |
0.929 |
1.216 |
-2.366 |
0.112 |
-0.104 |
0.35 |
-0.857 |
-2.643 |
0.904 |
-0.277 |
-3.331 |
0.666 |
-0.495 |
8.596 |
0.837 |
|
| 2022-09-21 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.685 |
-9.313 |
8986000 |
1.334 |
0.092 |
-3.806 |
-1.482 |
-2.818 |
-0.729 |
-0.401 |
-7.01 |
0.906 |
-0.712 |
14.133 |
0.919 |
-0.753 |
9.712 |
0.844 |
|
| 2022-09-20 |
16:42 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.884 |
-4.706 |
9983700 |
1.483 |
3 |
-1.868 |
1.329 |
-0.1 |
1.904 |
-0.226 |
25.857 |
0.841 |
-0.254 |
16.088 |
0.939 |
-0.051 |
19.903 |
0.58 |
|
| 2022-09-16 |
16:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.336 |
56.419 |
17178100 |
1.568 |
0.555 |
-3.604 |
-0.835 |
-2.558 |
-0.078 |
-0.823 |
26.486 |
1.35 |
-0.988 |
20.86 |
1.036 |
-0.185 |
13.442 |
0.44 |
|
| 2022-09-15 |
16:47 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.31 |
-3.448 |
7728100 |
1.435 |
3.1 |
-1.945 |
-0.426 |
-1.261 |
0.144 |
-0.814 |
3.08 |
0.986 |
0.066 |
15.934 |
0.677 |
0.242 |
4.236 |
0.497 |
|
| 2022-09-14 |
16:42 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.318 |
9.609 |
4913600 |
0.955 |
0 |
-2.488 |
-1.358 |
-2.243 |
-0.511 |
0.254 |
25.625 |
1.124 |
0.24 |
4.746 |
0.726 |
0.803 |
12.619 |
0.739 |
|
| 2022-09-13 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.825 |
41.641 |
3892000 |
2.708 |
8.678 |
-0.377 |
1.38 |
-0.082 |
2.189 |
1.019 |
2.314 |
1.395 |
0.946 |
5.006 |
1.238 |
0.94 |
17.133 |
0.853 |
|
| 2022-09-12 |
16:48 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.213 |
-37.012 |
3642900 |
1.27 |
3.077 |
-1.447 |
0 |
-0.099 |
0.186 |
0.507 |
-13.311 |
1.223 |
1.169 |
3.948 |
0.932 |
0.652 |
10.54 |
0.673 |
|
| 2022-09-09 |
16:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.801 |
10.389 |
6194400 |
1.993 |
5.593 |
-0.916 |
-0.045 |
-0.375 |
1.196 |
1.647 |
24.428 |
1.353 |
0.887 |
27.012 |
0.8 |
0.732 |
16.209 |
0.702 |
|
| 2022-09-08 |
16:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.494 |
38.468 |
7355400 |
2.08 |
6.379 |
-0.391 |
2.526 |
0.889 |
3.252 |
0.93 |
35.324 |
0.989 |
0.749 |
26.44 |
0.914 |
0.309 |
17.548 |
0.709 |
|
| 2022-09-07 |
16:49 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.634 |
32.18 |
5842900 |
1.562 |
1.88 |
-3.01 |
-0.546 |
-1.826 |
0.481 |
-0.123 |
20.427 |
1.138 |
0.122 |
10.729 |
1.036 |
-0.494 |
11.929 |
0.712 |
|
| 2022-09-06 |
16:48 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.388 |
8.673 |
3564100 |
1.188 |
2.092 |
-1.3 |
0.566 |
-0.631 |
1.259 |
0.501 |
0.004 |
1.126 |
-0.105 |
5.697 |
0.726 |
-0.432 |
10.675 |
0.494 |
|
| 2022-09-05 |
18:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.613 |
-8.665 |
3992800 |
1.832 |
2.632 |
-3.433 |
0.865 |
0.004 |
1.822 |
-0.352 |
4.209 |
0.81 |
-0.74 |
6.264 |
0.65 |
-0.196 |
3.505 |
0.435 |
|
| 2022-09-02 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.317 |
17.084 |
5214500 |
1.085 |
0.219 |
-3.231 |
-1.467 |
-2.067 |
-0.371 |
-1.417 |
13.729 |
0.912 |
-1.053 |
17.789 |
0.6 |
-0.648 |
14.057 |
0.622 |
|
| 2022-09-01 |
16:53 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.518 |
10.374 |
4817900 |
1.342 |
0.239 |
-3.268 |
-1.336 |
-2.811 |
-0.316 |
-0.922 |
18.141 |
0.688 |
-0.093 |
3.035 |
0.491 |
-0.288 |
13.489 |
0.554 |
|
| 2022-08-31 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.325 |
25.908 |
5792000 |
0.945 |
1.493 |
-1.869 |
-0.442 |
-0.841 |
0.081 |
0.62 |
-0.634 |
0.842 |
-0.136 |
14.276 |
0.598 |
0.147 |
18.192 |
0.59 |
|
| 2022-08-30 |
16:40 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.565 |
-27.176 |
3335200 |
1.274 |
3.771 |
-0.236 |
1.347 |
0.909 |
2.102 |
-0.041 |
8.459 |
1.051 |
0.134 |
10.387 |
0.775 |
0.36 |
29.828 |
0.561 |
|
| 2022-08-29 |
16:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.647 |
44.095 |
4414500 |
1.905 |
1.067 |
-4.731 |
-1.568 |
-3.154 |
-0.255 |
-0.581 |
29.169 |
1.256 |
-0.168 |
30.743 |
1.34 |
-0.203 |
33.334 |
0.693 |
|
| 2022-08-26 |
16:47 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.486 |
14.243 |
5114700 |
1.458 |
2.835 |
-2.233 |
0.262 |
-0.156 |
1.407 |
0.571 |
24.066 |
1.298 |
0.628 |
44.074 |
0.723 |
-0.006 |
21.01 |
0.719 |
|
| 2022-08-25 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.657 |
33.89 |
6837900 |
2.368 |
6.177 |
-2.308 |
0.396 |
-0.834 |
1.12 |
0.7 |
58.99 |
1.079 |
0.049 |
36.11 |
0.8 |
0.089 |
24.778 |
0.65 |
|
| 2022-08-24 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.742 |
84.091 |
3248100 |
1.667 |
4.092 |
-0.909 |
0.128 |
-0.461 |
1.439 |
-0.255 |
37.221 |
0.898 |
-0.39 |
18.973 |
0.641 |
0.023 |
14.566 |
0.551 |
|
| 2022-08-23 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.252 |
-9.649 |
3277000 |
0.865 |
-0.165 |
-2.692 |
-1.321 |
-1.742 |
-0.551 |
-0.956 |
-13.586 |
1.084 |
-0.317 |
1.969 |
0.655 |
0.004 |
-0.097 |
0.314 |
|
| 2022-08-22 |
18:55 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.66 |
-17.523 |
3144700 |
1.908 |
1.781 |
-4.9 |
-0.198 |
-1.165 |
0.242 |
0.15 |
7.778 |
0.936 |
0.208 |
-0.537 |
0.583 |
0.413 |
4.94 |
0.717 |
|
| 2022-08-19 |
17:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.961 |
33.08 |
3762700 |
0.894 |
2.384 |
-0.3 |
0.948 |
0.174 |
1.504 |
0.642 |
7.957 |
0.865 |
0.644 |
8.896 |
0.74 |
0.675 |
9.111 |
1.067 |
|
| 2022-08-18 |
19:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.323 |
-17.166 |
3155100 |
1.112 |
2.894 |
-1.108 |
0.114 |
0.009 |
0.604 |
0.485 |
-3.196 |
0.765 |
0.588 |
3.048 |
1.387 |
0.827 |
16.159 |
0.911 |
|
| 2022-08-17 |
17:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.646 |
10.774 |
4491900 |
1.028 |
2.33 |
-1.061 |
0.576 |
0.178 |
1.126 |
0.72 |
13.155 |
1.658 |
0.696 |
9.88 |
1.244 |
0.627 |
16.361 |
0.662 |
|
| 2022-08-16 |
16:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.794 |
15.536 |
3309600 |
2.771 |
7.018 |
-1.77 |
-0.245 |
-0.629 |
0.839 |
0.722 |
9.433 |
1.653 |
1.056 |
29.063 |
1.103 |
0.284 |
18.018 |
0.55 |
|
| 2022-08-15 |
16:40 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.649 |
3.331 |
3346300 |
1.623 |
2.703 |
-2.773 |
0.74 |
0.04 |
1.741 |
1.187 |
35.826 |
0.874 |
0.565 |
18.499 |
0.485 |
0.167 |
13.72 |
0.514 |
|
| 2022-08-12 |
16:40 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.724 |
68.322 |
5231900 |
1.19 |
3.721 |
0.149 |
1.28 |
1.039 |
2.399 |
0.523 |
26.083 |
0.685 |
-0.008 |
23.741 |
0.707 |
0.022 |
59.466 |
0.466 |
|
| 2022-08-10 |
19:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.679 |
-16.157 |
3534500 |
0.943 |
1.089 |
-1.957 |
-0.778 |
-1.318 |
-0.156 |
-0.875 |
1.45 |
1.052 |
-0.512 |
-1.017 |
0.743 |
-0.01 |
54.897 |
0.657 |
|
| 2022-08-09 |
16:45 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.071 |
19.057 |
5212700 |
1.667 |
0.807 |
-4.488 |
-0.775 |
-1.026 |
-0.141 |
-0.429 |
6.552 |
0.922 |
-0.313 |
81.722 |
0.779 |
0.123 |
58.008 |
0.61 |
|
| 2022-08-08 |
16:40 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.214 |
-5.952 |
3603300 |
1.028 |
1.712 |
-1.357 |
0.308 |
-0.572 |
0.71 |
0.067 |
113.055 |
0.994 |
0.567 |
90.528 |
0.833 |
0.045 |
50.875 |
0.457 |
|
| 2022-08-05 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.08 |
232.062 |
4803800 |
1.584 |
1.609 |
-3.875 |
-0.074 |
-0.568 |
1.11 |
0.744 |
138.768 |
1.161 |
0.491 |
92.312 |
0.778 |
0.266 |
52.251 |
0.602 |
|
| 2022-08-04 |
16:39 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.568 |
45.474 |
7712800 |
1.768 |
5.965 |
0 |
1.341 |
0.228 |
2.075 |
0.776 |
22.437 |
0.819 |
0.031 |
9.421 |
0.575 |
0.236 |
1.582 |
0.418 |
|
| 2022-08-03 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.016 |
-0.6 |
4184100 |
0.762 |
1.161 |
-1.012 |
0.126 |
-0.76 |
0.497 |
-0.737 |
-8.605 |
0.671 |
-0.053 |
-5.427 |
0.539 |
-0.109 |
1.72 |
0.327 |
|
| 2022-08-02 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.458 |
-16.61 |
3987300 |
0.868 |
0 |
-2.963 |
-1.408 |
-2.075 |
-1.019 |
-0.072 |
-7.84 |
0.57 |
-0.125 |
-12.321 |
0.429 |
-0.069 |
5.297 |
0.541 |
|
| 2022-08-01 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.314 |
0.93 |
3790400 |
1.151 |
2.737 |
-0.495 |
1.763 |
0.312 |
2.031 |
0.542 |
-10.177 |
0.652 |
0.309 |
8.603 |
0.614 |
0.35 |
84.013 |
0.421 |
|
| 2022-07-29 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.23 |
-21.284 |
5173200 |
1.455 |
3.255 |
-1.968 |
-0.542 |
-0.712 |
-0.092 |
-0.193 |
12.44 |
1.176 |
-0.067 |
14.054 |
1.173 |
-0.091 |
79.635 |
0.325 |
|
| 2022-07-28 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.156 |
46.164 |
6457200 |
1.753 |
1.52 |
-4.328 |
0.522 |
-0.622 |
0.976 |
0.015 |
31.724 |
1.758 |
0.222 |
146.806 |
0.685 |
0.128 |
93.055 |
0.604 |
|
| 2022-07-27 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.186 |
17.284 |
6186600 |
2.467 |
4.944 |
-3.664 |
-0.009 |
-0.497 |
1.446 |
0.411 |
197.127 |
1.252 |
-0.023 |
124.432 |
0.736 |
0.415 |
77.671 |
0.822 |
|
| 2022-07-26 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.637 |
376.971 |
9691500 |
2.706 |
8.138 |
-1.211 |
-0.09 |
-0.67 |
0.499 |
-0.128 |
178.006 |
1.229 |
0.204 |
133.942 |
1.167 |
0.799 |
77.877 |
1.149 |
|
| 2022-07-25 |
19:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.893 |
-20.958 |
3309800 |
1.058 |
0.904 |
-2.016 |
-1.136 |
-1.872 |
-0.11 |
-0.013 |
12.428 |
1.351 |
0.418 |
-1.967 |
1.271 |
0.681 |
12.71 |
0.94 |
|
| 2022-07-22 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.867 |
45.814 |
3467500 |
1.978 |
6.346 |
-0.372 |
0.309 |
-0.119 |
0.74 |
1.074 |
7.529 |
1.63 |
1.417 |
11.123 |
1.607 |
1.062 |
30.596 |
1.411 |
|
| 2022-07-21 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.28 |
-30.756 |
3182600 |
1.59 |
4.418 |
-0.634 |
0.938 |
0.215 |
2.092 |
1.692 |
-6.222 |
1.679 |
1.143 |
12.898 |
0.87 |
1.162 |
27.625 |
1.272 |
|
| 2022-07-20 |
18:50 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.104 |
18.312 |
4605000 |
1.937 |
5.397 |
-0.146 |
1.661 |
0.713 |
2.702 |
1.075 |
34.725 |
1.092 |
1.055 |
45.974 |
1.401 |
0.985 |
28.999 |
1.009 |
|
| 2022-07-19 |
22:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.047 |
51.138 |
3794700 |
2.805 |
2.828 |
-7.02 |
0.661 |
-0.326 |
1.117 |
0.531 |
59.804 |
1.745 |
0.808 |
50.19 |
1.446 |
0.045 |
25.045 |
0.876 |
|
| 2022-07-15 |
15:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.015 |
68.471 |
3764800 |
3.135 |
9.486 |
-1.13 |
-0.009 |
-0.566 |
1.021 |
1.189 |
49.717 |
2.149 |
0.926 |
25.182 |
1.348 |
0.288 |
11.252 |
0.606 |
|
| 2022-07-14 |
15:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.364 |
30.962 |
3075800 |
1.35 |
4.415 |
-0.073 |
0.868 |
0.478 |
1.906 |
0.881 |
3.537 |
0.567 |
-0.279 |
1.871 |
0.416 |
0.142 |
5.399 |
0.179 |
|
| 2022-07-13 |
22:42 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.399 |
-23.888 |
2798100 |
0.869 |
2.197 |
-0.828 |
0.408 |
-0.236 |
0.858 |
-1.101 |
-12.674 |
0.886 |
-0.313 |
-14.391 |
0.697 |
0.154 |
2.53 |
0.456 |
|
| 2022-07-12 |
22:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.6 |
-1.459 |
3423300 |
1.64 |
-0.248 |
-6.24 |
-2.75 |
-3.179 |
-1.534 |
-0.669 |
-9.642 |
0.86 |
-0.35 |
6.64 |
0.462 |
-0.138 |
10.51 |
0.45 |
|
| 2022-07-11 |
20:55 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.263 |
-17.825 |
3651100 |
0.873 |
2.098 |
-0.799 |
1.314 |
0.912 |
1.962 |
0.774 |
10.69 |
0.489 |
0.99 |
12.665 |
0.652 |
0.461 |
13.856 |
0.537 |
|
| 2022-07-08 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.286 |
39.205 |
5400400 |
0.677 |
1.272 |
-0.904 |
0.408 |
-0.094 |
0.766 |
0.854 |
27.911 |
0.78 |
0.215 |
23.944 |
0.639 |
0.369 |
10.442 |
0.493 |
|
| 2022-07-07 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.423 |
16.616 |
4206000 |
1.357 |
3.67 |
-0.623 |
1.311 |
0.32 |
2.356 |
0.18 |
16.314 |
0.859 |
0.252 |
15.967 |
0.728 |
-0.105 |
2.093 |
0.666 |
|
| 2022-07-06 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.063 |
16.012 |
4262200 |
2.003 |
2.453 |
-4.665 |
-1.251 |
-1.926 |
-0.062 |
-0.333 |
15.643 |
0.912 |
0.045 |
-1.204 |
0.723 |
-0.841 |
3.49 |
0.721 |
|
| 2022-07-05 |
16:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.397 |
15.274 |
3228400 |
1.161 |
2.695 |
-1.829 |
0.452 |
0.052 |
0.877 |
0.6 |
-9.811 |
0.791 |
-0.296 |
-7.387 |
0.794 |
-0.761 |
8.062 |
0.726 |
|
| 2022-07-04 |
16:40 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.802 |
-34.896 |
3149600 |
1.182 |
2.619 |
-1.454 |
0.742 |
0.405 |
1.246 |
-0.642 |
-18.718 |
1.132 |
-1.179 |
-4.612 |
0.894 |
-0.745 |
7.058 |
0.988 |
|
| 2022-07-01 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.086 |
-2.539 |
4848900 |
1.546 |
0.123 |
-4.857 |
-1.621 |
-3.217 |
-1.104 |
-2.17 |
10.529 |
1.035 |
-1.668 |
19.978 |
1.175 |
-0.689 |
17.293 |
0.773 |
|
| 2022-06-30 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.254 |
23.598 |
5735800 |
1.528 |
-0.111 |
-4.288 |
-2.177 |
-3.66 |
-1.301 |
-1.46 |
31.236 |
1.272 |
-0.813 |
24.242 |
1.009 |
0.206 |
25.446 |
0.587 |
|
| 2022-06-29 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.665 |
38.874 |
5466700 |
1.986 |
4 |
-3.148 |
-0.806 |
-1.497 |
-0.626 |
-0.092 |
24.563 |
1.438 |
0.298 |
21.802 |
0.862 |
0.827 |
21.958 |
0.793 |
|
| 2022-06-28 |
16:42 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.48 |
10.252 |
5511400 |
1.672 |
3.858 |
-1.955 |
0.522 |
-0.094 |
1.264 |
0.779 |
13.265 |
0.845 |
1.317 |
21.585 |
0.943 |
0.537 |
13.455 |
0.744 |
|
| 2022-06-27 |
16:42 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.079 |
16.279 |
4554100 |
0.924 |
2.473 |
-0.284 |
0.755 |
0.685 |
1.773 |
1.735 |
27.252 |
1.183 |
1.439 |
20.221 |
0.898 |
1.047 |
11.713 |
0.697 |
|
| 2022-06-24 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.391 |
38.224 |
5477300 |
2.441 |
7.988 |
-0.125 |
1.908 |
0.741 |
3.416 |
1.619 |
22.192 |
1.511 |
0.376 |
13.581 |
1.119 |
0.625 |
3.719 |
0.962 |
|
| 2022-06-23 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.848 |
6.16 |
4395600 |
1.622 |
4.055 |
-1.099 |
0.532 |
-0.431 |
1.82 |
-0.632 |
1.259 |
1.059 |
0.589 |
1.355 |
0.799 |
-0.433 |
5.111 |
0.852 |
|
| 2022-06-22 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.111 |
-3.641 |
4430100 |
1.924 |
0.374 |
-6.078 |
-1.846 |
-3.22 |
-0.593 |
0.46 |
-1.048 |
0.834 |
-0.038 |
-8.596 |
0.977 |
-0.563 |
10.044 |
0.967 |
|
| 2022-06-21 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
3.03 |
1.545 |
4042900 |
1.78 |
5.079 |
0.25 |
3.176 |
1.622 |
4.74 |
0.998 |
-11.073 |
1.559 |
-0.3 |
7.68 |
0.974 |
-0.343 |
13.383 |
1.156 |
|
| 2022-06-20 |
16:40 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.034 |
-23.692 |
3536600 |
2.513 |
3.628 |
-4.797 |
-0.751 |
-2.851 |
-0.27 |
-1.966 |
10.747 |
1.58 |
-1.245 |
17.439 |
1.606 |
-0.957 |
16.205 |
0.969 |
|
| 2022-06-17 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.898 |
45.185 |
6973300 |
1.684 |
-0.1 |
-5.454 |
-2.763 |
-3.932 |
-2.21 |
-1.351 |
38.004 |
1.582 |
-1.237 |
29.686 |
1.277 |
-1.29 |
20.481 |
0.763 |
|
| 2022-06-16 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.197 |
30.823 |
4730300 |
2.318 |
2.589 |
-5.671 |
0.604 |
-0.341 |
1.682 |
-0.407 |
21.937 |
1.647 |
-0.285 |
19.845 |
0.952 |
-1.05 |
13.17 |
0.776 |
|
| 2022-06-15 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.011 |
13.051 |
4424500 |
1.718 |
2.927 |
-3.509 |
-0.974 |
-1.779 |
-0.67 |
-0.526 |
14.356 |
1.064 |
-1.249 |
8.799 |
0.914 |
-1.158 |
9.01 |
0.489 |
|
| 2022-06-14 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.041 |
15.66 |
3816700 |
1.77 |
2.883 |
-1.865 |
-0.683 |
-1.394 |
1.273 |
-1.369 |
6.672 |
1.82 |
-1.478 |
7.325 |
1.28 |
-0.752 |
11.462 |
0.77 |
|
| 2022-06-13 |
16:45 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.696 |
-2.315 |
4368800 |
2.763 |
-0.198 |
-10.079 |
-2.262 |
-2.85 |
-1.374 |
-2.197 |
3.158 |
1.574 |
-1.58 |
5.446 |
0.714 |
-0.688 |
20.084 |
0.626 |
|
| 2022-06-10 |
16:41 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.698 |
8.631 |
5396300 |
1.068 |
0.049 |
-3.117 |
-1.714 |
-2.536 |
-1.077 |
-1.022 |
9.327 |
0.6 |
-0.342 |
14.655 |
0.711 |
-0.083 |
17.713 |
0.71 |
|
| 2022-06-09 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.346 |
10.023 |
6210500 |
1.393 |
1.765 |
-3.252 |
-0.398 |
-0.92 |
0.544 |
0.336 |
17.667 |
1.151 |
0.318 |
31.368 |
0.967 |
0.273 |
17.927 |
0.801 |
|
| 2022-06-08 |
16:39 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.018 |
25.312 |
4825800 |
1.562 |
3.672 |
-1.478 |
1.059 |
0.108 |
1.804 |
0.651 |
42.04 |
1.104 |
0.542 |
23.304 |
1.003 |
0.202 |
11.958 |
0.678 |
|
| 2022-06-07 |
20:04 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.282 |
58.769 |
3834900 |
1.795 |
1.778 |
-4.394 |
0.832 |
-0.062 |
1.196 |
0.304 |
22.3 |
1.146 |
0.232 |
18.099 |
0.996 |
0.33 |
2.8 |
0.788 |
|
| 2022-06-06 |
21:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.325 |
-14.169 |
2514300 |
1.098 |
2.035 |
-1.959 |
0.339 |
-0.143 |
0.884 |
0.206 |
-2.235 |
1.165 |
-0.097 |
-8.098 |
0.65 |
0.083 |
-3.392 |
0.32 |
|
| 2022-06-03 |
21:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.087 |
9.698 |
3564000 |
1.674 |
2.395 |
-3.448 |
0.251 |
-0.853 |
1.17 |
-0.309 |
-5.062 |
0.755 |
0.348 |
-10.2 |
0.69 |
0.591 |
25.51 |
0.392 |
|
| 2022-06-02 |
17:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.704 |
-19.822 |
3772500 |
1.248 |
0.672 |
-2.946 |
-0.222 |
-1.736 |
0.261 |
0.479 |
-20.15 |
1.036 |
0.002 |
-4.162 |
0.689 |
0.989 |
30.53 |
0.52 |
|
| 2022-06-01 |
17:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.662 |
-20.477 |
5034200 |
1.344 |
4.384 |
0.112 |
1.392 |
0.642 |
2.45 |
0.355 |
3.667 |
0.541 |
1.191 |
45.891 |
0.551 |
1.157 |
33.901 |
0.633 |
|
| 2022-05-31 |
22:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.953 |
27.812 |
17940000 |
1.663 |
2.4 |
-3.094 |
-0.978 |
-2.171 |
-0.083 |
0.956 |
79.075 |
1.094 |
1.329 |
64.316 |
0.901 |
0.687 |
40.077 |
0.422 |
|
| 2022-05-30 |
16:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.864 |
130.339 |
6979500 |
1.599 |
5.311 |
-0.145 |
3.206 |
2.253 |
3.727 |
2.47 |
82.568 |
1.506 |
1.693 |
54.057 |
1.211 |
0.613 |
33.036 |
0.541 |
|
| 2022-05-27 |
22:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.075 |
34.798 |
6100900 |
2.552 |
9.163 |
0.583 |
1.266 |
0.879 |
1.894 |
1.107 |
15.916 |
1.625 |
0.508 |
14.078 |
0.837 |
0.027 |
4.605 |
0.645 |
|
| 2022-05-26 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.138 |
-2.965 |
4195500 |
1.189 |
2.002 |
-1.718 |
0.027 |
-0.735 |
0.941 |
-0.276 |
3.718 |
0.74 |
-0.624 |
0.014 |
0.814 |
-0.184 |
2.356 |
0.773 |
|
| 2022-05-25 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.691 |
10.4 |
5396600 |
1.686 |
1.936 |
-3.709 |
-0.024 |
-1.964 |
0.239 |
-1.006 |
1.503 |
1.324 |
-0.693 |
-2.936 |
1.108 |
-0.397 |
1.984 |
1.06 |
|
| 2022-05-24 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.32 |
-7.394 |
4304500 |
1.183 |
0.635 |
-2.747 |
-1.697 |
-2.192 |
-0.382 |
-0.694 |
-9.605 |
0.954 |
-0.123 |
1.448 |
0.966 |
-0.047 |
2.119 |
0.865 |
|
| 2022-05-23 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.067 |
-11.816 |
4715200 |
1.112 |
2.069 |
-2.019 |
0.042 |
-0.65 |
0.243 |
0.476 |
5.869 |
1.069 |
0.009 |
2.305 |
1.063 |
0.421 |
3.382 |
0.569 |
|
| 2022-05-20 |
18:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.018 |
23.553 |
6399500 |
1.782 |
3.524 |
-1.522 |
1.465 |
-0.176 |
2.195 |
0.047 |
9.366 |
1.451 |
0.383 |
9.935 |
1.098 |
0.098 |
14.54 |
1.517 |
|
| 2022-05-19 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.924 |
-4.821 |
5336000 |
2.137 |
1.441 |
-5.694 |
-0.378 |
-1.18 |
0.33 |
0.066 |
3.126 |
1.594 |
0.384 |
1.725 |
0.971 |
0.524 |
13.838 |
1.557 |
|
| 2022-05-18 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.056 |
11.074 |
5020400 |
1.881 |
5.263 |
-1.228 |
0.448 |
0.086 |
1.164 |
1.039 |
4.998 |
1.492 |
0.132 |
17.99 |
1.771 |
0.403 |
19.619 |
1.341 |
|
| 2022-05-17 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.021 |
-1.078 |
6103600 |
2.225 |
4.651 |
-2.837 |
0.84 |
-0.151 |
1.958 |
-0.33 |
21.448 |
2.383 |
0.83 |
20.98 |
1.902 |
0.404 |
14.017 |
1.287 |
|
| 2022-05-16 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.681 |
43.974 |
5197200 |
5.85 |
2.076 |
-17.9 |
0.064 |
-1.001 |
0.948 |
0.735 |
32.009 |
2.982 |
-0.021 |
29.366 |
2.058 |
0.109 |
18.734 |
1.52 |
|
| 2022-05-13 |
19:51 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
3.15 |
20.044 |
5951200 |
3.239 |
11.131 |
-0.15 |
3.444 |
1.112 |
3.669 |
0.809 |
22.062 |
1.523 |
0.893 |
9.063 |
1.3 |
-0.113 |
14.661 |
0.756 |
|
| 2022-05-12 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.533 |
24.08 |
6302400 |
0.936 |
0 |
-2.684 |
-1.864 |
-2.124 |
-0.719 |
-0.236 |
3.572 |
1.552 |
-0.308 |
9.883 |
1.156 |
-0.56 |
12.545 |
0.778 |
|
| 2022-05-11 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.06 |
-16.935 |
4846200 |
2.434 |
6.641 |
-1.439 |
0.617 |
-0.474 |
0.968 |
0.304 |
2.785 |
1.373 |
-0.727 |
9.727 |
0.771 |
-0.448 |
4.267 |
0.733 |
|
| 2022-05-10 |
16:39 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.453 |
22.505 |
4723100 |
0.671 |
0.25 |
-2.058 |
-0.389 |
-0.682 |
-0.005 |
-1.621 |
23.059 |
0.812 |
-0.776 |
18.527 |
0.797 |
-0.615 |
3.778 |
0.906 |
|
| 2022-05-09 |
21:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.789 |
23.612 |
4388500 |
1.53 |
-1.496 |
-6.581 |
-2.302 |
-3.304 |
-1.819 |
-0.938 |
16.538 |
1.025 |
-0.95 |
5.255 |
1.104 |
-0.449 |
15.825 |
0.89 |
|
| 2022-05-06 |
19:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.913 |
9.464 |
7233900 |
1.792 |
3.423 |
-1.691 |
0.548 |
0.191 |
2.452 |
-0.03 |
-3.924 |
1.455 |
0.056 |
-9.077 |
1.275 |
0.355 |
16.062 |
0.673 |
|
| 2022-05-02 |
19:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.974 |
-17.312 |
4916100 |
1.602 |
1.323 |
-3.796 |
-0.8 |
-2.025 |
0.102 |
-0.373 |
-18.347 |
1.632 |
-0.123 |
15.35 |
0.985 |
-0.36 |
32.446 |
0.527 |
|
| 2022-04-28 |
19:57 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.228 |
-19.381 |
6232600 |
2.402 |
4.016 |
-4.323 |
0.58 |
-0.586 |
1.538 |
0.303 |
31.68 |
1.1 |
0.612 |
29.387 |
0.692 |
-0.352 |
32.904 |
0.527 |
|
| 2022-04-27 |
20:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.377 |
82.742 |
5891300 |
1.645 |
2.663 |
-1.61 |
0.083 |
-1.086 |
1.972 |
0.804 |
53.771 |
1.593 |
-0.351 |
66.308 |
1.11 |
-0.024 |
35.916 |
0.754 |
|
| 2022-04-26 |
21:25 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.23 |
24.8 |
5624900 |
3.057 |
9.18 |
-0.958 |
0.056 |
-0.44 |
1.224 |
-0.716 |
58.091 |
1.601 |
-0.789 |
33.72 |
1.131 |
-0.157 |
17.854 |
0.647 |
|
| 2022-04-25 |
21:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.662 |
91.382 |
4115800 |
1.166 |
-0.302 |
-4.686 |
-2.826 |
-3.007 |
-2.204 |
-1.799 |
38.179 |
0.763 |
-0.576 |
24.013 |
0.397 |
0.161 |
19.44 |
0.365 |
|
| 2022-04-22 |
22:12 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.935 |
-15.023 |
3114400 |
0.835 |
0.955 |
-1.92 |
-1.016 |
-1.526 |
-0.566 |
0.466 |
-9.672 |
0.857 |
0.215 |
-8.97 |
0.898 |
0.274 |
-0.491 |
0.441 |
|
| 2022-04-21 |
22:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.868 |
-4.321 |
3860500 |
1.539 |
5.013 |
-0.399 |
1.72 |
1.076 |
2.546 |
0.79 |
-5.944 |
1.155 |
1.467 |
6.947 |
0.892 |
0.356 |
20.465 |
0.681 |
|
| 2022-04-20 |
22:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.288 |
-7.566 |
4235000 |
2.034 |
3.075 |
-3.911 |
0.226 |
-1.585 |
0.871 |
1.267 |
12.58 |
0.633 |
0.146 |
5.63 |
0.489 |
0.029 |
20.779 |
1.085 |
|
| 2022-04-19 |
22:46 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.821 |
32.727 |
3776700 |
2.47 |
7.508 |
-0.3 |
2.342 |
1.092 |
4.571 |
0.362 |
12.228 |
1.268 |
0.066 |
38.071 |
1.299 |
0.787 |
31.067 |
1.427 |
|
| 2022-04-18 |
17:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.097 |
-8.272 |
|
1.669 |
-0.347 |
-5.374 |
-1.777 |
-3.224 |
-0.713 |
-1.311 |
40.743 |
1.337 |
-0.796 |
26.245 |
1.802 |
0.142 |
27.884 |
1.166 |
|
| 2022-04-15 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.525 |
89.758 |
|
2.402 |
5.061 |
-4.058 |
-0.664 |
-1.655 |
0.097 |
-0.145 |
43.503 |
2.652 |
1.07 |
43.626 |
2.424 |
0.259 |
31.456 |
1.338 |
|
| 2022-04-14 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.235 |
-2.752 |
|
6.75 |
9.159 |
-16.835 |
0.976 |
0.245 |
1.878 |
1.867 |
20.561 |
4.051 |
1.11 |
19.311 |
2.248 |
0.397 |
12.334 |
1.443 |
|
| 2022-04-13 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
3.499 |
43.873 |
|
4.62 |
15.798 |
-0.747 |
2.117 |
1.242 |
3.808 |
1.548 |
30.342 |
2.241 |
0.529 |
23.425 |
1.346 |
-0.282 |
15.413 |
0.791 |
|
| 2022-04-12 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.403 |
16.812 |
|
1.802 |
3.473 |
-3.063 |
-0.43 |
-1.298 |
0.268 |
-0.956 |
13.202 |
1.16 |
-0.583 |
6.85 |
0.791 |
-1.408 |
10.713 |
0.598 |
|
| 2022-04-11 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.509 |
9.591 |
|
2.127 |
1.695 |
-4.704 |
-1.638 |
-3.041 |
-0.059 |
-0.673 |
1.868 |
0.804 |
-1.502 |
5.46 |
0.611 |
-1.441 |
17.831 |
0.464 |
|
| 2022-04-08 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.164 |
-5.855 |
|
1.43 |
3.237 |
-2.144 |
0.255 |
-0.412 |
0.615 |
-1.499 |
3.394 |
0.571 |
-1.709 |
9.054 |
0.559 |
-1.059 |
12.137 |
0.609 |
|
| 2022-04-07 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.161 |
12.643 |
|
1.25 |
-1.339 |
-5.281 |
-3.268 |
-3.943 |
-2.096 |
-2.646 |
16.508 |
0.917 |
-1.954 |
28.473 |
0.652 |
-1.366 |
10.055 |
0.756 |
|
| 2022-04-06 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.13 |
20.373 |
|
1.566 |
0.238 |
-5.511 |
-1.831 |
-2.923 |
-1.203 |
-1.35 |
36.388 |
1.017 |
-0.765 |
17.966 |
1.079 |
-0.88 |
6.267 |
0.945 |
|
| 2022-04-05 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.57 |
52.404 |
|
1.149 |
2.062 |
-2.251 |
-0.64 |
-1.243 |
-0.261 |
-0.083 |
16.763 |
0.999 |
-0.514 |
5.754 |
0.971 |
-0.124 |
5.515 |
0.797 |
|
| 2022-04-04 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.404 |
-18.878 |
|
1.666 |
2.336 |
-3.647 |
0.441 |
0.011 |
1.515 |
-0.485 |
-17.571 |
1.258 |
-0.567 |
-13.814 |
0.996 |
0.202 |
1.028 |
0.802 |
|
| 2022-04-01 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.375 |
-16.264 |
|
1.65 |
0.753 |
-3.34 |
-1.782 |
-2.83 |
0.275 |
-1.052 |
-11.282 |
1.175 |
-0.152 |
-1.983 |
1.311 |
-0.044 |
2.407 |
0.657 |
|
| 2022-03-31 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.73 |
-6.301 |
|
1.308 |
1.751 |
-2.759 |
-0.976 |
-1.468 |
-0.15 |
0.46 |
5.158 |
1.942 |
0.66 |
13.427 |
1.447 |
0.245 |
7.825 |
0.629 |
|
| 2022-03-30 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.649 |
16.617 |
|
3.487 |
9.81 |
-1.593 |
0.77 |
-0.378 |
1.28 |
1.355 |
23.291 |
1.963 |
0.628 |
11.533 |
0.778 |
0.522 |
5.521 |
0.634 |
|
| 2022-03-29 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.061 |
29.966 |
|
1.662 |
4.046 |
-1.916 |
0.786 |
0.527 |
2.15 |
0.118 |
8.992 |
1.438 |
0.102 |
9.602 |
0.974 |
0.654 |
5.758 |
1.123 |
|
| 2022-03-28 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.825 |
-11.983 |
|
2.745 |
4.444 |
-5.456 |
-0.282 |
-1.43 |
-0.03 |
-0.378 |
-0.58 |
1.524 |
-0.033 |
-6.327 |
1.341 |
0.434 |
-6.101 |
1.233 |
|
| 2022-03-25 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.069 |
10.824 |
|
1.219 |
1.286 |
-2.526 |
0.265 |
-0.15 |
0.945 |
0.363 |
-3.498 |
1.096 |
1.012 |
3.601 |
1.298 |
0.934 |
3.326 |
0.737 |
|
| 2022-03-24 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.657 |
-17.82 |
|
1.911 |
3.22 |
-3.741 |
0.786 |
-0.105 |
1.93 |
1.483 |
-0.01 |
1.831 |
0.975 |
-9.781 |
1.521 |
1.781 |
6.379 |
0.929 |
|
| 2022-03-23 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.309 |
17.801 |
|
1.961 |
4.554 |
-0.904 |
2.882 |
1.055 |
3.703 |
1.134 |
-5.762 |
1.417 |
1.315 |
7.875 |
0.777 |
2.068 |
14.75 |
1.165 |
|
| 2022-03-22 |
16:39 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.04 |
-29.324 |
|
1.601 |
2.521 |
-3.742 |
0.076 |
-0.503 |
0.786 |
0.818 |
2.912 |
1.035 |
1.98 |
10.639 |
1.293 |
1.794 |
18.335 |
0.972 |
|
| 2022-03-18 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.676 |
35.148 |
|
3.211 |
10.057 |
-1.843 |
0.914 |
0.156 |
1.56 |
2.99 |
30.62 |
2.565 |
2.69 |
28.425 |
2.061 |
1.996 |
17.682 |
1.435 |
|
| 2022-03-17 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
4.303 |
26.092 |
|
2.354 |
8.299 |
1.058 |
3.814 |
3.254 |
5.544 |
3.197 |
25.063 |
2.123 |
2.445 |
28.617 |
1.359 |
1.057 |
11.873 |
0.892 |
|
| 2022-03-16 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.09 |
24.034 |
|
2.827 |
7.838 |
0 |
0.851 |
0.281 |
2.083 |
1.516 |
29.879 |
1.398 |
1.334 |
9.057 |
1.025 |
1.18 |
7.217 |
1.062 |
|
| 2022-03-15 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.942 |
35.725 |
|
1.657 |
2.66 |
-2.762 |
1.554 |
0.188 |
1.991 |
0.956 |
1.569 |
1.395 |
-0.369 |
3.079 |
1.519 |
0.869 |
-0.917 |
1.324 |
|
| 2022-03-14 |
16:40 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.969 |
-32.586 |
|
1.853 |
5.667 |
-0.906 |
0.48 |
-0.117 |
1.488 |
-1.024 |
-13.244 |
2.048 |
0.956 |
-7.892 |
2.059 |
0.415 |
-10.142 |
0.87 |
|
| 2022-03-11 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.018 |
6.098 |
|
2.838 |
0.671 |
-9.238 |
-2.402 |
-4.21 |
-1.347 |
0.949 |
4.455 |
2.281 |
0.811 |
-2.574 |
1.553 |
-0.874 |
4.173 |
0.653 |
|
| 2022-03-10 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
4.916 |
2.812 |
|
2.783 |
12.03 |
1.966 |
4.601 |
3.252 |
5.121 |
2.726 |
-6.91 |
1.574 |
1.374 |
-8.074 |
0.664 |
-0.89 |
9.54 |
0.867 |
|
| 2022-03-09 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.536 |
-16.632 |
|
0.898 |
1.772 |
-0.732 |
0.578 |
-0.246 |
1.256 |
-0.397 |
-13.518 |
1.085 |
-2.089 |
3.984 |
1.954 |
-1.644 |
8.702 |
1.155 |
|
| 2022-03-08 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.33 |
-10.404 |
|
2.464 |
1.483 |
-7.092 |
-0.656 |
-2.209 |
-0.038 |
-3.401 |
14.292 |
3.106 |
-3.301 |
20.506 |
2.337 |
-2.112 |
25.616 |
1.085 |
|
| 2022-03-07 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-5.472 |
38.988 |
|
4.126 |
0 |
-14.804 |
-4.701 |
-6.748 |
-3.149 |
-4.287 |
35.961 |
2.582 |
-2.475 |
23.514 |
1.48 |
-1.491 |
23.984 |
1.038 |
|
| 2022-03-04 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.102 |
32.933 |
|
1.447 |
-0.727 |
-4.798 |
-3.031 |
-4.412 |
-2.593 |
-0.977 |
15.777 |
0.958 |
-1.253 |
33.166 |
0.969 |
-0.014 |
22.066 |
1.214 |
|
| 2022-03-03 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.149 |
-1.378 |
|
1.521 |
4.945 |
-0.304 |
0.8 |
0.28 |
1.299 |
-0.328 |
33.282 |
1.449 |
0.374 |
16 |
1.438 |
1.352 |
12.451 |
1.826 |
|
| 2022-03-02 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.805 |
67.943 |
|
1.965 |
2.06 |
-4.424 |
-1.81 |
-3.251 |
-1.115 |
-0.014 |
24.688 |
1.922 |
0.627 |
26.259 |
1.943 |
0.522 |
24.747 |
1.416 |
|
| 2022-03-01 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.777 |
-18.566 |
|
2.325 |
7.717 |
-0.296 |
1.034 |
0.557 |
2.366 |
1.844 |
5.417 |
2.077 |
2.472 |
-1.437 |
2.375 |
0.552 |
14.727 |
1.127 |
|
| 2022-02-28 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.91 |
29.4 |
|
2.333 |
6.78 |
-0.534 |
1.926 |
-0.052 |
2.323 |
2.82 |
7.128 |
2.702 |
0.88 |
24.786 |
1.386 |
0.058 |
19.019 |
0.723 |
|
| 2022-02-25 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
3.729 |
-15.145 |
|
3.336 |
9.453 |
-0.601 |
3.521 |
1.103 |
6.062 |
0.364 |
22.479 |
1.635 |
-0.31 |
20.934 |
1.118 |
-0.358 |
14.863 |
0.655 |
|
| 2022-02-24 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3 |
60.103 |
|
3.221 |
0.368 |
-10.076 |
-2.384 |
-4.329 |
-0.418 |
-2.329 |
38.974 |
1.915 |
-1.784 |
26.947 |
1.226 |
-1.261 |
17.422 |
0.708 |
|
| 2022-02-22 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.658 |
17.845 |
|
1.106 |
-0.123 |
-3.264 |
-1.405 |
-2.633 |
-0.756 |
-1.176 |
10.369 |
0.486 |
-0.839 |
9.786 |
0.379 |
-0.32 |
3.33 |
0.474 |
|
| 2022-02-21 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.693 |
2.893 |
|
0.537 |
0.211 |
-1.968 |
-0.644 |
-0.757 |
-0.532 |
-0.429 |
5.757 |
0.457 |
-0.549 |
3.054 |
0.817 |
-0.08 |
-2.058 |
0.574 |
|
| 2022-02-18 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.165 |
8.621 |
|
0.659 |
1.227 |
-1.089 |
-0.14 |
-0.635 |
0.136 |
-0.477 |
3.135 |
1.01 |
0.251 |
-1.362 |
0.809 |
-0.444 |
0.199 |
0.899 |
|
| 2022-02-17 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.788 |
-2.35 |
|
2.008 |
3.821 |
-3.233 |
-0.833 |
-2.056 |
-0.145 |
0.459 |
-6.354 |
1.2 |
0.152 |
-7.267 |
0.839 |
-0.319 |
8.763 |
1.368 |
|
| 2022-02-16 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.707 |
-10.357 |
|
1.492 |
4.219 |
0.243 |
1.19 |
0.426 |
2.743 |
0.622 |
-9.725 |
1.084 |
-0.422 |
-1.758 |
1.013 |
0.217 |
11.462 |
0.987 |
|
| 2022-02-15 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.463 |
-9.094 |
|
1.291 |
1.451 |
-2.888 |
-0.209 |
-1.195 |
-0.012 |
-1.486 |
2.542 |
1.372 |
-0.839 |
18.84 |
1.789 |
-0.082 |
16.642 |
0.944 |
|
| 2022-02-14 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.509 |
14.177 |
|
2.67 |
2.074 |
-7.849 |
-2.768 |
-3.566 |
-0.814 |
-1.027 |
32.807 |
2.678 |
-0.054 |
25.586 |
1.591 |
-0.274 |
15.673 |
1.094 |
|
| 2022-02-10 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.456 |
51.437 |
|
3.884 |
6.884 |
-8.908 |
0.696 |
0.115 |
1.314 |
1.174 |
31.291 |
1.759 |
0.855 |
26.042 |
1.135 |
0.397 |
16.772 |
0.775 |
|
| 2022-02-09 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.892 |
11.145 |
|
1.302 |
4.036 |
-0.048 |
1.408 |
1.121 |
2.525 |
1.054 |
13.345 |
0.877 |
0.229 |
4.25 |
0.881 |
-0.032 |
4.138 |
0.725 |
|
| 2022-02-08 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.216 |
15.545 |
|
1.559 |
2.627 |
-2.315 |
-0.124 |
-0.674 |
1.558 |
-0.603 |
0.802 |
1.493 |
-0.121 |
7.093 |
0.909 |
0.157 |
2.316 |
0.801 |
|
| 2022-02-07 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.423 |
-13.942 |
|
2.216 |
2.078 |
-5.556 |
-1.101 |
-1.777 |
-0.285 |
-0.289 |
2.867 |
0.95 |
-0.757 |
-1.999 |
1.12 |
0.253 |
1.108 |
0.537 |
|
| 2022-02-04 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.844 |
19.675 |
|
0.676 |
2.16 |
-0.042 |
0.69 |
0.474 |
1.314 |
-0.424 |
3.972 |
0.697 |
0.664 |
3.326 |
0.489 |
1.06 |
0.231 |
0.755 |
|
| 2022-02-03 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.692 |
-11.732 |
|
1.849 |
1.408 |
-4.846 |
-2.199 |
-2.655 |
-0.374 |
0.574 |
-4.849 |
0.803 |
0.614 |
-0.065 |
0.824 |
1.172 |
-10.881 |
0.7 |
|
| 2022-02-02 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.839 |
2.034 |
|
1.673 |
5.91 |
0.24 |
2.97 |
2.334 |
3.67 |
1.767 |
5.768 |
1.327 |
2.05 |
-2.263 |
1.519 |
0.639 |
27.805 |
0.636 |
|
| 2022-02-01 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.696 |
9.502 |
|
2.359 |
5.938 |
-2.576 |
0.399 |
-0.708 |
1.291 |
1.656 |
-4.411 |
1.908 |
1.57 |
-14.902 |
1.167 |
-0.074 |
28.125 |
1.044 |
|
| 2022-01-31 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.615 |
-18.324 |
|
2.038 |
6.074 |
-0.48 |
2.389 |
1.093 |
4.22 |
2.008 |
-27.103 |
1.144 |
-0.113 |
42.497 |
0.81 |
-0.845 |
31.787 |
0.829 |
|
| 2022-01-28 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.4 |
-35.883 |
|
1.08 |
3.273 |
-0.224 |
1.37 |
0.773 |
2.116 |
-1.476 |
72.907 |
1.571 |
-1.227 |
49.815 |
1.512 |
-1.258 |
35.641 |
1.034 |
|
| 2022-01-27 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-4.353 |
181.696 |
|
2.913 |
-0.096 |
-8.687 |
-4.558 |
-5.85 |
-2.576 |
-2.54 |
92.664 |
2.261 |
-2.746 |
71.048 |
1.835 |
-1.886 |
44.886 |
1.392 |
|
| 2022-01-26 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.728 |
3.632 |
|
2.874 |
3.885 |
-7.736 |
-0.2 |
-1.171 |
0 |
-1.943 |
15.723 |
1.744 |
-1.113 |
10.798 |
0.961 |
-0.8 |
3.144 |
0.886 |
|
| 2022-01-25 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.159 |
27.814 |
|
2.23 |
-0.123 |
-6.557 |
-3.064 |
-4.868 |
-1.799 |
-1.305 |
14.381 |
1.161 |
-1.45 |
13.034 |
1.235 |
-1.427 |
10.494 |
0.989 |
|
| 2022-01-24 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.548 |
0.947 |
|
1.198 |
2.326 |
-0.813 |
0.266 |
-0.406 |
1.588 |
-0.595 |
5.644 |
0.927 |
-0.038 |
-5.243 |
0.56 |
-0.855 |
13.072 |
0.494 |
|
| 2022-01-21 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.738 |
10.34 |
|
2.227 |
0.528 |
-6.162 |
-1.186 |
-2.792 |
-0.057 |
-0.331 |
-8.338 |
0.908 |
-1.509 |
7.903 |
1.153 |
-1.152 |
6.648 |
0.815 |
|
| 2022-01-20 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.076 |
-27.016 |
|
0.843 |
2.635 |
0 |
0.762 |
0.661 |
1.746 |
-1.394 |
6.684 |
0.811 |
-1.028 |
18.024 |
0.87 |
-1.452 |
15.407 |
1.162 |
|
| 2022-01-19 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.865 |
40.385 |
|
2.057 |
-0.123 |
-6.604 |
-4.49 |
-5.154 |
-2.867 |
-2.08 |
40.543 |
1.445 |
-1.699 |
16.639 |
1.062 |
-1.813 |
20.594 |
1.179 |
|
| 2022-01-18 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.296 |
40.702 |
|
2.265 |
5.224 |
-2.585 |
-0.687 |
-1.763 |
-0.112 |
-0.617 |
4.766 |
0.908 |
-1.491 |
21.223 |
1.502 |
-0.562 |
13.317 |
0.768 |
|
| 2022-01-17 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.938 |
-31.17 |
|
2.007 |
1.004 |
-5.965 |
-0.405 |
-1.615 |
0.339 |
-2.088 |
11.483 |
3.059 |
-1.635 |
7.294 |
2.067 |
-0.657 |
5.023 |
1.053 |
|
| 2022-01-14 |
16:39 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.238 |
54.136 |
|
4.313 |
0.739 |
-14.925 |
-2.272 |
-3.147 |
-1.615 |
-1.983 |
26.525 |
2.239 |
-0.525 |
19.018 |
1.287 |
-0.701 |
11.339 |
0.961 |
|
| 2022-01-13 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.728 |
-1.086 |
|
0.991 |
0.778 |
-2.429 |
-0.762 |
-0.936 |
-0.342 |
0.832 |
1.459 |
1.167 |
0.296 |
0.716 |
1.203 |
-0.591 |
5.339 |
0.799 |
|
| 2022-01-12 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.392 |
4.004 |
|
1.727 |
5.14 |
0.282 |
2.468 |
0.891 |
3.498 |
0.809 |
1.617 |
1.641 |
0.154 |
1.215 |
1.201 |
-0.699 |
6.92 |
1.072 |
|
| 2022-01-11 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.774 |
-0.77 |
|
2.315 |
2.392 |
-5.051 |
-0.578 |
-1.056 |
0.269 |
-0.965 |
-0.18 |
1.388 |
-1.539 |
7.925 |
1.281 |
-0.896 |
23.949 |
1.409 |
|
| 2022-01-07 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.156 |
0.41 |
|
1.341 |
0.401 |
-3.541 |
-0.844 |
-1.836 |
-0.156 |
-1.922 |
12.272 |
1.4 |
-1.705 |
10.454 |
1.784 |
-0.571 |
25.074 |
1.32 |
|
| 2022-01-06 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.687 |
24.134 |
|
2.131 |
0.187 |
-6.28 |
-2.775 |
-3.632 |
-0.914 |
-1.979 |
15.477 |
2.312 |
-0.85 |
40.034 |
2.039 |
-0.36 |
19.903 |
1.163 |
|
| 2022-01-05 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.271 |
6.819 |
|
2.837 |
3.574 |
-5.579 |
-0.269 |
-3.772 |
0.326 |
0.069 |
47.984 |
2.306 |
0.33 |
33.608 |
1.536 |
0.308 |
22.757 |
0.828 |
|
| 2022-01-04 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.409 |
89.15 |
|
2.179 |
5.435 |
-2.183 |
1.199 |
0.29 |
1.916 |
1.13 |
47.003 |
1.363 |
0.72 |
22.853 |
0.888 |
0.409 |
20.667 |
0.428 |
|
| 2021-12-30 |
17:24 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.852 |
4.856 |
|
1.262 |
3.054 |
-0.543 |
0.32 |
-0.087 |
1.475 |
0.375 |
-10.295 |
0.909 |
0.467 |
5.939 |
0.504 |
0.291 |
3.599 |
0.309 |
|
| 2021-12-29 |
22:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.101 |
-25.447 |
|
1.724 |
3.803 |
-2.915 |
-0.155 |
-0.398 |
0.124 |
0.275 |
6.48 |
1.073 |
-0.071 |
3.11 |
0.529 |
0.439 |
2.016 |
0.383 |
|
| 2021-12-28 |
23:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.65 |
38.407 |
|
1.807 |
3.963 |
-1.959 |
0.75 |
-0.423 |
1.726 |
-0.056 |
17.389 |
1.04 |
0.235 |
12.863 |
0.536 |
0.649 |
7.846 |
0.588 |
|
| 2021-12-27 |
22:39 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.763 |
-3.629 |
|
0.973 |
0.351 |
-3.19 |
-0.583 |
-0.981 |
-0.268 |
0.028 |
0.091 |
0.884 |
0.549 |
-0.959 |
0.925 |
0.577 |
0.937 |
0.756 |
|
| 2021-12-24 |
16:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.819 |
3.81 |
|
1.5 |
4.167 |
-1.202 |
0.482 |
-0.056 |
1.533 |
1.205 |
0.375 |
1.294 |
1.12 |
1.484 |
1.325 |
0.037 |
0.682 |
0.616 |
|
| 2021-12-23 |
16:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.592 |
-3.059 |
|
1.425 |
4.317 |
-0.719 |
1.82 |
0.579 |
2.058 |
1.27 |
0.321 |
1.347 |
0.944 |
1.502 |
0.954 |
-0.457 |
1.781 |
0.472 |
|
| 2021-12-22 |
20:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.948 |
3.701 |
|
2.265 |
5.14 |
-1.357 |
0.081 |
-0.3 |
2.088 |
0.62 |
3.782 |
1.139 |
-0.742 |
0.887 |
0.813 |
-0.456 |
4.285 |
0.428 |
|
| 2021-12-21 |
22:12 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.292 |
3.863 |
|
0.899 |
1.792 |
-1.276 |
0.312 |
-0.031 |
0.841 |
-1.587 |
-0.521 |
1.081 |
-1.608 |
2.755 |
0.927 |
-0.447 |
7.914 |
0.576 |
|
| 2021-12-20 |
17:48 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-3.465 |
-4.904 |
|
2.027 |
-0.471 |
-6.92 |
-3.49 |
-4.707 |
-1.899 |
-2.558 |
2.201 |
1.293 |
-1.173 |
4.621 |
0.89 |
-0.742 |
12.233 |
0.693 |
|
| 2021-12-17 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.652 |
9.306 |
|
1.164 |
-0.235 |
-3.033 |
-1.925 |
-2.72 |
-0.427 |
-0.026 |
9.383 |
0.88 |
0.313 |
13.537 |
0.956 |
-0.139 |
11.475 |
0.748 |
|
| 2021-12-16 |
17:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.598 |
9.461 |
|
2.37 |
5.556 |
-3.056 |
1.512 |
0.328 |
3.148 |
1.295 |
15.653 |
1.647 |
0.469 |
18.922 |
1.082 |
0.066 |
17.732 |
0.782 |
|
| 2021-12-15 |
22:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.991 |
21.845 |
|
2.249 |
6.122 |
-1.93 |
0.37 |
-0.141 |
1.405 |
-0.096 |
23.652 |
1.149 |
-0.215 |
12.87 |
1.267 |
-0.496 |
12.695 |
0.757 |
|
| 2021-12-14 |
16:58 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.183 |
25.46 |
|
1.71 |
2.525 |
-3.498 |
-1 |
-2.208 |
-0.55 |
-0.818 |
8.382 |
1.835 |
-0.753 |
19.119 |
1.348 |
-0.578 |
8.87 |
0.633 |
|
| 2021-12-13 |
16:08 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.452 |
-8.695 |
|
2.474 |
3.426 |
-6.266 |
-0.094 |
-1.026 |
0.102 |
-0.538 |
15.948 |
1.449 |
-0.763 |
5.389 |
0.885 |
-0.06 |
11.108 |
0.366 |
|
| 2021-12-10 |
19:22 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.624 |
40.591 |
|
1.352 |
2.349 |
-2.415 |
-0.986 |
-1.275 |
0.019 |
-0.918 |
12.431 |
1.073 |
-0.419 |
9.195 |
0.723 |
-0.078 |
8.652 |
0.736 |
|
| 2021-12-09 |
16:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.213 |
-15.729 |
|
1.613 |
0.809 |
-3.976 |
-1.088 |
-2.003 |
0.026 |
-0.316 |
-6.503 |
1.03 |
0.259 |
7.881 |
0.9 |
0.239 |
1 |
1.214 |
|
| 2021-12-08 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.581 |
2.722 |
|
1.094 |
2.829 |
-1.339 |
0.47 |
0.146 |
0.863 |
0.995 |
19.686 |
0.872 |
0.482 |
6.132 |
0.81 |
0.146 |
2.641 |
1.022 |
|
| 2021-12-07 |
16:38 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.41 |
36.649 |
|
1.279 |
3.626 |
-1.01 |
1.462 |
0.744 |
2.072 |
0.433 |
7.837 |
1.056 |
0.61 |
6.002 |
1.657 |
0.208 |
-1.649 |
1.15 |
|
| 2021-12-06 |
20:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.543 |
-20.974 |
|
1.316 |
0.34 |
-3.958 |
-0.056 |
-0.299 |
0.11 |
0.21 |
-9.322 |
1.984 |
-0.419 |
-8.722 |
1.465 |
-0.142 |
-1.641 |
0.852 |
|
| 2021-12-03 |
16:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.962 |
2.33 |
|
3.404 |
4.99 |
-7.875 |
1.561 |
0.607 |
2.448 |
-0.358 |
-2.596 |
1.706 |
0.058 |
-7.973 |
1.371 |
-0.438 |
12.82 |
0.547 |
|
| 2021-12-02 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.678 |
-7.523 |
|
2.131 |
1.149 |
-6.541 |
-1.342 |
-2.538 |
-0.294 |
-0.393 |
-13.124 |
1.052 |
-0.377 |
3.48 |
0.954 |
-0.953 |
24.632 |
0.878 |
|
| 2021-12-01 |
20:15 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.891 |
-18.726 |
|
1.449 |
3.994 |
-0.815 |
0.556 |
-0.112 |
1.423 |
0.274 |
8.982 |
1.088 |
-0.492 |
23.097 |
0.765 |
-0.665 |
20.36 |
0.593 |
|
| 2021-11-30 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.343 |
36.689 |
|
1.973 |
3.274 |
-3.623 |
-0.692 |
-0.99 |
0.255 |
-1.183 |
44.008 |
1.39 |
-1.326 |
49.803 |
1.396 |
-1.12 |
28.27 |
0.892 |
|
| 2021-11-29 |
16:37 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-2.023 |
51.327 |
|
1.467 |
0.281 |
-3.747 |
-2.525 |
-3.288 |
-0.682 |
-1.818 |
56.359 |
1.589 |
-1.292 |
27.946 |
0.949 |
-0.851 |
24.886 |
0.755 |
|
| 2021-11-26 |
16:35 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.612 |
61.392 |
|
1.826 |
1.524 |
-4.142 |
-1.515 |
-3.025 |
-0.383 |
-0.926 |
16.255 |
0.782 |
-1.078 |
17.779 |
0.891 |
-0.333 |
15.338 |
0.508 |
|
| 2021-11-25 |
19:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.24 |
-28.881 |
|
1.295 |
2.056 |
-2.292 |
-0.326 |
-1.166 |
0.594 |
-0.81 |
-4.028 |
0.976 |
-0.206 |
3.905 |
0.522 |
-0.125 |
9.365 |
0.776 |
|
| 2021-11-24 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.381 |
20.825 |
|
1.874 |
0.65 |
-4.821 |
-0.506 |
-2.99 |
-0.139 |
-0.19 |
20.297 |
0.987 |
0.062 |
14.727 |
0.771 |
-0.19 |
14.878 |
0.849 |
|
| 2021-11-22 |
16:27 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.001 |
19.77 |
|
2.53 |
7.519 |
-0.798 |
0.232 |
-0.647 |
1.71 |
0.784 |
11.678 |
1.587 |
0.331 |
18.294 |
1.308 |
0.267 |
7.198 |
0.687 |
|
| 2021-11-19 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.566 |
3.585 |
|
1.545 |
1.959 |
-3.467 |
0.97 |
0.394 |
1.404 |
-0.004 |
17.556 |
1.509 |
-0.191 |
11.265 |
1.491 |
0.045 |
17.279 |
1.007 |
|
| 2021-11-18 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.573 |
31.528 |
|
1.879 |
3.776 |
-3.095 |
-0.568 |
-1.694 |
0.023 |
-0.569 |
15.104 |
1.525 |
-0.078 |
4.212 |
0.537 |
0.548 |
29.437 |
0.922 |
|
| 2021-11-17 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.565 |
-1.319 |
|
2.423 |
2.746 |
-5.75 |
-0.361 |
-1.721 |
0.827 |
0.169 |
-9.446 |
1.068 |
0.078 |
17.095 |
1.264 |
0.812 |
25.532 |
1.094 |
|
| 2021-11-16 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.904 |
-17.574 |
|
3.304 |
9.79 |
-1.84 |
0.176 |
-0.659 |
1.12 |
0.4 |
26.302 |
1.449 |
1.292 |
38.992 |
1.441 |
0.722 |
29.211 |
1.166 |
|
| 2021-11-15 |
16:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.105 |
70.177 |
|
3.546 |
5.345 |
-8.151 |
-0.456 |
-0.637 |
0.767 |
1.486 |
67.275 |
2.266 |
1.24 |
48.852 |
1.847 |
0.514 |
32.717 |
1.267 |
|
| 2021-11-12 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
3.078 |
64.372 |
|
2.615 |
8.041 |
0.465 |
1.956 |
1.453 |
3.806 |
1.912 |
38.189 |
1.555 |
0.936 |
31.151 |
1.542 |
0.365 |
18.731 |
0.81 |
|
| 2021-11-11 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.747 |
12.005 |
|
2.508 |
5.101 |
-3.541 |
0.524 |
-0.097 |
1.075 |
-0.135 |
14.541 |
2.01 |
-0.135 |
9.679 |
1.088 |
-0.426 |
1.37 |
0.737 |
|
| 2021-11-10 |
20:51 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.016 |
17.076 |
|
4.045 |
2.805 |
-11.807 |
-0.396 |
-0.874 |
0.544 |
-0.576 |
8.515 |
1.768 |
-0.666 |
5.76 |
1.06 |
-0.155 |
9.873 |
0.566 |
|
| 2021-11-09 |
16:26 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.135 |
-0.045 |
|
1.513 |
3.051 |
-2.032 |
-0.192 |
-1.098 |
0.48 |
-0.491 |
0.102 |
0.806 |
-0.62 |
-7.41 |
0.491 |
-0.211 |
6.549 |
0.392 |
|
| 2021-11-08 |
16:28 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.847 |
0.249 |
|
1.183 |
0.983 |
-2.659 |
-1.069 |
-1.682 |
0 |
-0.863 |
-11.093 |
0.634 |
0.125 |
10.778 |
0.744 |
0.075 |
5.398 |
0.528 |
|
| 2021-11-05 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-0.879 |
-22.435 |
|
1.537 |
1.592 |
-3.095 |
-1.12 |
-1.976 |
-0.272 |
0.611 |
16.042 |
0.914 |
-0.025 |
10.848 |
0.596 |
0.258 |
4.282 |
0.574 |
|
| 2021-11-04 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
2.102 |
54.52 |
|
2.285 |
6.195 |
-0.668 |
1.694 |
0.395 |
3.646 |
0.403 |
27.489 |
1.192 |
0.7 |
16.392 |
0.888 |
0.358 |
29.544 |
0.791 |
|
| 2021-11-02 |
16:29 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
-1.297 |
0.459 |
|
0.889 |
-0.231 |
-3.221 |
-1.319 |
-1.638 |
-0.596 |
-0.001 |
-2.672 |
0.816 |
0.023 |
-3.558 |
1.024 |
-0.274 |
23.592 |
0.982 |
|
| 2021-11-01 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
1.296 |
-5.804 |
|
1.187 |
3.783 |
-0.743 |
1.086 |
1.031 |
1.57 |
0.683 |
-5.566 |
1.237 |
0.328 |
30.914 |
0.859 |
0.493 |
33.005 |
0.466 |
|
| 2021-10-29 |
23:59 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
10 |
0.07 |
-5.328 |
|
1.891 |
2.867 |
-3.085 |
0.177 |
-0.833 |
0.99 |
-0.156 |
49.272 |
1.012 |
-0.456 |
41.102 |
1.503 |
0.174 |
32.239 |
0.294 |
|
| 2021-10-28 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.837 |
110.085 |
|
1.516 |
1.391 |
-3.478 |
-0.132 |
-1.757 |
0.174 |
-0.741 |
64.13 |
1.774 |
0.212 |
57.709 |
0.762 |
0.095 |
32.628 |
0.639 |
|
| 2021-10-27 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.645 |
18.174 |
|
3.253 |
4.575 |
-10 |
-0.231 |
-1.494 |
0.966 |
0.737 |
31.521 |
0.894 |
0.345 |
17.247 |
0.64 |
0.017 |
12.303 |
0.608 |
|
| 2021-10-26 |
16:36 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
2.119 |
44.867 |
|
3.103 |
11.386 |
-0.692 |
1.282 |
0.093 |
2.892 |
0.839 |
16.784 |
2.06 |
0.653 |
11.627 |
1.616 |
0.003 |
7.876 |
1.023 |
|
| 2021-10-25 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.441 |
-11.299 |
|
1.451 |
3.59 |
-2.891 |
-0.512 |
-0.904 |
-0.149 |
-0.081 |
-4.993 |
1.241 |
-0.464 |
-0.509 |
0.976 |
-0.288 |
-1.365 |
0.906 |
|
| 2021-10-22 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.28 |
1.312 |
|
1.567 |
2.888 |
-2.642 |
0.113 |
-0.613 |
1.164 |
-0.475 |
4.887 |
1.044 |
-0.554 |
1.937 |
0.956 |
-0.262 |
-2.559 |
1.228 |
|
| 2021-10-21 |
16:30 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.229 |
8.461 |
|
1.217 |
0.698 |
-3.167 |
-1.353 |
-2.276 |
-0.323 |
-0.971 |
2.25 |
1.002 |
-0.426 |
1.054 |
0.879 |
0.517 |
12.903 |
1.341 |
|
| 2021-10-20 |
16:31 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.713 |
-3.961 |
|
1.085 |
0.92 |
-3.182 |
-0.64 |
-1.283 |
0 |
-0.024 |
-2.65 |
1.085 |
-0.12 |
-7.523 |
1.48 |
1.079 |
10.524 |
1.709 |
|
| 2021-10-19 |
16:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.664 |
-1.338 |
|
1.956 |
4.24 |
-1.299 |
-0.035 |
-0.946 |
1.988 |
0.177 |
-9.304 |
2.131 |
1.51 |
20.005 |
2.328 |
0.948 |
14.526 |
1.577 |
|
| 2021-10-18 |
16:33 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.31 |
-17.269 |
|
3.051 |
3.003 |
-9.798 |
0.347 |
-0.759 |
1.125 |
1.933 |
30.677 |
2.692 |
1.814 |
19.306 |
2.467 |
0.796 |
16.955 |
1.434 |
|
| 2021-10-15 |
16:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
4.176 |
78.624 |
|
4.024 |
14.62 |
0.34 |
2.681 |
1.767 |
5.068 |
2.876 |
37.594 |
3.123 |
1.462 |
30.413 |
1.633 |
1.063 |
16.993 |
1.182 |
|
| 2021-10-14 |
16:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.577 |
-3.436 |
|
2.487 |
7.733 |
-0.738 |
0.712 |
0.093 |
2.192 |
0.105 |
6.308 |
0.639 |
0.038 |
7.806 |
0.789 |
0.458 |
6.778 |
0.654 |
|
| 2021-10-13 |
16:11 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.368 |
16.052 |
|
2.079 |
1.307 |
-6.627 |
-1.006 |
-2.091 |
-0.273 |
-0.731 |
13.428 |
1.15 |
-0.146 |
3.259 |
0.932 |
0.262 |
3.578 |
0.85 |
|
| 2021-10-12 |
16:14 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.095 |
10.803 |
|
1.978 |
4.695 |
-3.937 |
-0.197 |
-1.161 |
0.902 |
0.465 |
-3.138 |
1.214 |
0.694 |
7.092 |
1.009 |
0.452 |
-2.139 |
0.817 |
|
| 2021-10-11 |
16:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.026 |
-17.078 |
|
1.246 |
3.746 |
-0.449 |
0.63 |
0.099 |
1.66 |
1.088 |
5.236 |
0.902 |
0.924 |
-2.989 |
0.918 |
0.29 |
1.075 |
0.743 |
|
| 2021-10-08 |
16:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.151 |
27.551 |
|
1.148 |
3.011 |
-0.492 |
0.863 |
0.313 |
1.924 |
0.874 |
4.055 |
1.32 |
0.443 |
-1.474 |
0.947 |
-0.427 |
5.496 |
1.047 |
|
| 2021-10-07 |
16:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.597 |
-19.44 |
|
1.781 |
4.932 |
-2.564 |
0.695 |
-0.361 |
1.138 |
0.089 |
-15.986 |
0.91 |
-0.242 |
-1.699 |
0.83 |
-1.022 |
0.905 |
0.803 |
|
| 2021-10-06 |
23:32 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.419 |
-12.532 |
|
1.296 |
1.194 |
-2.428 |
-0.232 |
-0.915 |
0.544 |
-0.662 |
7.172 |
1.256 |
-1.294 |
6.457 |
1.569 |
-1.358 |
5.323 |
1.023 |
|
| 2021-10-05 |
16:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.905 |
26.876 |
|
1.727 |
2.226 |
-4.205 |
-0.778 |
-1.347 |
-0.046 |
-1.732 |
15.952 |
1.968 |
-1.763 |
12.166 |
1.137 |
-1.613 |
9.826 |
1.009 |
|
| 2021-10-04 |
16:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-2.559 |
5.027 |
|
2.731 |
0.139 |
-10.649 |
-2.45 |
-3.045 |
-0.783 |
-2.192 |
4.81 |
1.358 |
-1.821 |
4.091 |
1.214 |
-1.363 |
11.019 |
0.668 |
|
| 2021-10-01 |
16:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.824 |
4.594 |
|
2.212 |
2.735 |
-5.969 |
-1.872 |
-2.472 |
-0.773 |
-1.453 |
3.623 |
1.097 |
-1.533 |
5.743 |
0.823 |
-0.833 |
6.215 |
0.517 |
|
| 2021-09-30 |
16:05 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.081 |
2.652 |
|
2.087 |
2.782 |
-4.801 |
-1.015 |
-1.773 |
-0.11 |
-1.387 |
6.318 |
1.239 |
-0.811 |
15.157 |
0.507 |
0.243 |
22.04 |
0.902 |
|
| 2021-09-29 |
16:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.693 |
9.983 |
|
1.132 |
0.78 |
-3.984 |
-1.745 |
-2.03 |
-1.494 |
-0.676 |
21.41 |
0.881 |
-0.419 |
7.943 |
0.738 |
0.167 |
18.003 |
1.137 |
|
| 2021-09-28 |
16:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.342 |
32.836 |
|
1.922 |
3.896 |
-1.941 |
0 |
-0.927 |
1.555 |
0.218 |
6.923 |
1.303 |
1.33 |
32.521 |
2.157 |
0.088 |
16.271 |
1.306 |
|
| 2021-09-27 |
16:00 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.093 |
-18.989 |
|
0.946 |
1.818 |
-1.821 |
0.109 |
-0.337 |
0.464 |
1.825 |
32.364 |
2.534 |
0.729 |
15.732 |
1.659 |
0.205 |
16.204 |
1.229 |
|
| 2021-09-24 |
21:21 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
3.556 |
83.717 |
|
4.571 |
18.395 |
0.233 |
2.599 |
1.774 |
3.305 |
1.046 |
33.093 |
2.241 |
0.002 |
22.503 |
1.59 |
0.003 |
22.604 |
1.007 |
|
| 2021-09-22 |
15:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.464 |
-17.532 |
|
0.897 |
-0.067 |
-3.111 |
-1.523 |
-2.083 |
-0.77 |
-1.775 |
-8.104 |
0.948 |
-0.874 |
5.43 |
0.705 |
-0.821 |
1.428 |
0.571 |
|
| 2021-09-21 |
16:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-2.086 |
1.323 |
|
1.238 |
0.331 |
-3.837 |
-2.387 |
-2.796 |
-1.515 |
-0.58 |
16.912 |
0.811 |
-0.692 |
15.611 |
0.674 |
-0.51 |
5.181 |
0.575 |
|
| 2021-09-17 |
16:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.926 |
32.5 |
|
1.378 |
4.039 |
-0.491 |
0.662 |
-0.033 |
1.554 |
0.004 |
22.755 |
0.803 |
-0.186 |
7.784 |
0.66 |
0.028 |
4.77 |
0.738 |
|
| 2021-09-16 |
21:18 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.918 |
13.011 |
|
1.6 |
1.173 |
-4.348 |
-0.282 |
-1.943 |
0 |
-0.741 |
-4.574 |
0.733 |
-0.463 |
-2.64 |
0.941 |
0.08 |
8.319 |
0.662 |
|
| 2021-09-15 |
23:34 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.565 |
-22.159 |
|
1.432 |
2.335 |
-2.913 |
-0.52 |
-1.798 |
0 |
-0.235 |
-10.465 |
0.739 |
0.045 |
-7.22 |
1.03 |
0.076 |
1.834 |
0.572 |
|
| 2021-09-14 |
16:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.094 |
1.229 |
|
2.356 |
3.138 |
-5.428 |
0.859 |
0.327 |
1.468 |
0.349 |
0.249 |
1.629 |
0.628 |
16.914 |
1.05 |
0.352 |
6.181 |
0.913 |
|
| 2021-09-13 |
16:44 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.604 |
-0.731 |
|
2.641 |
4.762 |
-6.119 |
0.14 |
-0.221 |
1.579 |
0.894 |
24.756 |
0.906 |
0.283 |
10.034 |
0.619 |
0.44 |
22.157 |
0.404 |
|
| 2021-09-10 |
16:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.184 |
50.243 |
|
1.927 |
5.181 |
-2.685 |
0.849 |
0.443 |
1.879 |
0.123 |
15.416 |
1.104 |
0.354 |
10.135 |
1.133 |
0.709 |
19.188 |
0.715 |
|
| 2021-09-09 |
16:09 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.939 |
-19.411 |
|
0.842 |
0.649 |
-2.89 |
-1.008 |
-1.28 |
-0.591 |
-0.061 |
-9.919 |
0.895 |
0.137 |
20.424 |
0.476 |
0.895 |
14.832 |
0.979 |
|
| 2021-09-08 |
16:03 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.817 |
-0.427 |
|
1.627 |
2.998 |
-3.866 |
0.998 |
0.543 |
1.805 |
0.675 |
40.342 |
0.761 |
1.1 |
21.703 |
0.712 |
1.09 |
23.95 |
0.907 |
|
| 2021-09-07 |
16:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.534 |
81.112 |
|
1.677 |
4.404 |
-2.232 |
0.111 |
-0.157 |
1.173 |
1.242 |
32.769 |
1.168 |
1.531 |
31.333 |
1.792 |
1.117 |
21.73 |
1.004 |
|
| 2021-09-06 |
23:17 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.951 |
-15.574 |
|
1.993 |
7.42 |
0.102 |
1.64 |
0.73 |
2.419 |
2.03 |
6.443 |
2.297 |
1.367 |
13.022 |
1.468 |
1.156 |
12.238 |
1.08 |
|
| 2021-09-03 |
16:01 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
2.11 |
28.461 |
|
3.321 |
10.537 |
-3.385 |
1.526 |
0.283 |
2.317 |
1.075 |
27.32 |
1.48 |
1.034 |
14.371 |
0.993 |
1.153 |
17.271 |
0.777 |
|
| 2021-09-02 |
16:10 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.04 |
26.18 |
|
1.75 |
2.964 |
-4.536 |
0.363 |
-0.338 |
0.562 |
0.496 |
7.327 |
1.185 |
0.573 |
16.101 |
0.768 |
0.828 |
18.734 |
0.663 |
|
| 2021-09-01 |
16:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.952 |
-11.527 |
|
1.613 |
4.797 |
-1.317 |
0.646 |
0 |
1.781 |
0.84 |
11.061 |
1.038 |
1.205 |
10.571 |
1.213 |
0.938 |
13.472 |
1.278 |
|
| 2021-08-31 |
16:02 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.729 |
33.648 |
|
1.283 |
4.218 |
-0.763 |
0.541 |
-0.188 |
1.326 |
1.331 |
21.62 |
1.167 |
1.049 |
26.338 |
1.081 |
0.556 |
12.677 |
1.035 |
|
| 2021-08-30 |
16:06 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.934 |
9.592 |
|
2.476 |
8.819 |
-0.864 |
2.121 |
0.235 |
2.402 |
1.21 |
22.683 |
1.241 |
1.003 |
15.079 |
1.669 |
0.779 |
10.518 |
1.048 |
|
| 2021-08-27 |
15:43 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.485 |
35.774 |
|
2.506 |
8.093 |
-2.607 |
-0.035 |
-0.408 |
0.378 |
0.538 |
17.822 |
2.25 |
0.039 |
6.715 |
1.28 |
0.923 |
3.801 |
1.387 |
|
| 2021-08-26 |
23:23 |
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.591 |
-0.129 |
|
2.7 |
6.999 |
-2.063 |
-0.021 |
-0.536 |
0.368 |
-0.183 |
-7.814 |
1.286 |
0.492 |
2.407 |
1.05 |
0.242 |
4.829 |
0.581 |
|
| 2021-08-25 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.957 |
-15.498 |
|
1.328 |
0.527 |
-4.53 |
-0.613 |
-1.435 |
-0.162 |
0.442 |
3.675 |
1.079 |
1.18 |
-5.547 |
1.339 |
-0.268 |
10.905 |
0.464 |
|
| 2021-08-24 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.841 |
22.849 |
|
2.624 |
6.386 |
-2.978 |
2.028 |
0.213 |
3.896 |
2.249 |
-0.571 |
2.443 |
0.526 |
13.258 |
1.385 |
0.174 |
13.632 |
0.707 |
|
| 2021-08-23 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
2.656 |
-23.991 |
|
2.604 |
8.497 |
-0.932 |
1.656 |
1.296 |
4.048 |
-0.131 |
8.462 |
1.56 |
-0.741 |
15.725 |
1.033 |
-0.454 |
74.39 |
0.917 |
|
| 2021-08-20 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-2.918 |
40.914 |
|
3.653 |
3.072 |
-12.069 |
-2.316 |
-4.874 |
-0.537 |
-2.439 |
35.582 |
2.351 |
-1.209 |
23.1 |
2.065 |
-0.972 |
79.634 |
1.52 |
|
| 2021-08-19 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.961 |
30.25 |
|
3.04 |
6.614 |
-6.398 |
-2.372 |
-2.873 |
-1.806 |
-0.355 |
14.193 |
3.026 |
-0.669 |
118.342 |
1.81 |
-0.614 |
75.739 |
1.788 |
|
| 2021-08-18 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.25 |
-1.865 |
|
3.304 |
11.014 |
-2.509 |
0.498 |
0.021 |
0.644 |
-0.023 |
162.388 |
1.32 |
0.007 |
109.002 |
2.622 |
-0.213 |
71.686 |
1.664 |
|
| 2021-08-17 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.297 |
326.641 |
|
1.843 |
0.897 |
-4.825 |
-0.957 |
-1.639 |
0.047 |
-0.615 |
164.436 |
3.447 |
-0.787 |
116.77 |
2.554 |
-0.634 |
74.875 |
1.778 |
|
| 2021-08-16 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.066 |
2.231 |
|
6.481 |
21.246 |
-3.85 |
-1.59 |
-2.092 |
-0.713 |
-0.532 |
11.834 |
3.434 |
-0.339 |
11.217 |
2.401 |
-0.03 |
12.317 |
1.523 |
|
| 2021-08-13 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.131 |
21.438 |
|
2.149 |
1.917 |
-6.383 |
-0.821 |
-1.259 |
0.295 |
-0.542 |
15.711 |
1.614 |
-0.647 |
15.167 |
1.55 |
-0.079 |
18.361 |
0.906 |
|
| 2021-08-12 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.047 |
9.983 |
|
1.841 |
2.874 |
-4.225 |
-0.119 |
-0.424 |
0.329 |
-0.405 |
12.032 |
1.701 |
0.305 |
12.638 |
1.005 |
0.168 |
8.628 |
0.908 |
|
| 2021-08-11 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.858 |
14.081 |
|
1.755 |
2.038 |
-3.5 |
-1.454 |
-1.77 |
-0.234 |
0.434 |
13.966 |
0.839 |
0.229 |
20.128 |
0.74 |
-0.107 |
20.626 |
0.699 |
|
| 2021-08-10 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.725 |
13.85 |
|
1.836 |
5.707 |
-0.211 |
1.238 |
0.339 |
2.743 |
0.773 |
23.152 |
1.358 |
0.55 |
6.359 |
1.534 |
0.092 |
15.569 |
1.061 |
|
| 2021-08-06 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.179 |
32.454 |
|
2.437 |
5.922 |
-5.66 |
-0.036 |
-0.814 |
0.212 |
-0.038 |
2.613 |
2.108 |
-0.467 |
25.066 |
1.291 |
0.008 |
13.383 |
0.993 |
|
| 2021-08-05 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.104 |
-27.228 |
|
2.635 |
6.136 |
-5.357 |
-0.106 |
-0.994 |
0.562 |
-0.611 |
21.372 |
1.399 |
-0.363 |
10.514 |
1.173 |
-0.28 |
7.973 |
0.865 |
|
| 2021-08-04 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.327 |
69.971 |
|
2.322 |
2.97 |
-5.715 |
-1.221 |
-2.046 |
0 |
-0.596 |
29.385 |
1.342 |
0.038 |
20.564 |
0.925 |
-0.09 |
15.231 |
0.669 |
|
| 2021-08-03 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.135 |
-11.201 |
|
1.104 |
2.76 |
-1.44 |
0 |
-0.512 |
0.783 |
0.72 |
-4.14 |
1.326 |
-0.059 |
-0.96 |
0.979 |
-0.09 |
1.495 |
0.861 |
|
| 2021-08-02 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.306 |
2.921 |
|
2.666 |
5.755 |
-4.255 |
0.903 |
-0.047 |
3.351 |
-0.156 |
4.16 |
1.501 |
0.248 |
5.795 |
1.081 |
-0.019 |
10.635 |
1.149 |
|
| 2021-07-30 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.618 |
5.399 |
|
0.867 |
-0.14 |
-3.713 |
-1.509 |
-1.793 |
-1.129 |
-0.281 |
7.233 |
0.896 |
-0.63 |
5.251 |
0.926 |
0.042 |
8.198 |
0.973 |
|
| 2021-07-29 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.056 |
9.066 |
|
1.413 |
3.361 |
-0.383 |
0.576 |
0 |
2.268 |
-0.136 |
5.177 |
1.139 |
0.073 |
14.952 |
1.257 |
0.491 |
9.645 |
1 |
|
| 2021-07-28 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.328 |
1.289 |
|
1.708 |
1.08 |
-4.611 |
-0.981 |
-2.28 |
-0.316 |
-0.418 |
17.895 |
1.647 |
0.257 |
8.842 |
1.399 |
0.023 |
9.051 |
0.851 |
|
| 2021-07-27 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.492 |
34.5 |
|
2.286 |
5.405 |
-3.337 |
0.127 |
-0.159 |
1.416 |
1.049 |
12.618 |
1.665 |
0.909 |
12.623 |
1.207 |
-0.095 |
11.471 |
0.786 |
|
| 2021-07-26 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.607 |
-9.264 |
|
1.927 |
5.402 |
-1.043 |
1.567 |
0.211 |
1.987 |
1.118 |
1.685 |
1.358 |
0.317 |
3.155 |
0.851 |
-0.193 |
10.876 |
1.253 |
|
| 2021-07-21 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.629 |
12.634 |
|
1.616 |
1.989 |
-3.643 |
1.281 |
0.141 |
1.832 |
-0.328 |
9.364 |
0.673 |
-0.858 |
10.707 |
0.947 |
-0.741 |
13.354 |
1.007 |
|
| 2021-07-20 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.284 |
6.094 |
|
1.405 |
0.126 |
-4.056 |
-0.954 |
-1.791 |
-0.147 |
-1.601 |
9.743 |
1.299 |
-1.067 |
17.003 |
1.398 |
-1 |
11.309 |
0.725 |
|
| 2021-07-19 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.918 |
13.393 |
|
2.112 |
0.768 |
-6.944 |
-1.562 |
-3.025 |
-0.634 |
-0.958 |
22.457 |
2.07 |
-1.016 |
16.013 |
1.355 |
-0.596 |
9.503 |
0.947 |
|
| 2021-07-16 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.002 |
31.522 |
|
3.249 |
6.84 |
-7.159 |
0 |
-0.833 |
0.393 |
-0.565 |
17.324 |
1.516 |
-0.599 |
12.352 |
0.932 |
0.315 |
6.221 |
1.044 |
|
| 2021-07-15 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.133 |
3.125 |
|
1.255 |
1.361 |
-3.587 |
-1.113 |
-1.739 |
-0.531 |
-0.899 |
2.768 |
0.996 |
-0.355 |
0.866 |
0.437 |
0.373 |
4.168 |
0.775 |
|
| 2021-07-14 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.266 |
-55.652 |
|
1.563 |
4.018 |
-2.407 |
-0.526 |
-1.05 |
-0.211 |
0.234 |
-29.294 |
0.593 |
1.036 |
-20.534 |
1.402 |
0.317 |
-5.095 |
0.892 |
|
| 2021-07-13 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.537 |
-55.902 |
|
1.192 |
2.45 |
-2.165 |
0.637 |
0.329 |
1.026 |
1.589 |
-29.458 |
1.932 |
1.155 |
-12.553 |
1.21 |
0.193 |
-12.459 |
0.814 |
|
| 2021-07-12 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
2.591 |
-47.157 |
|
2.935 |
10.759 |
-0.108 |
2.039 |
0.307 |
2.979 |
1.439 |
-12.95 |
1.628 |
0.355 |
-3.676 |
1.062 |
0.185 |
-11.163 |
0.752 |
|
| 2021-07-09 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.288 |
21.257 |
|
2.066 |
5.735 |
-2.257 |
0 |
-0.785 |
1.03 |
-0.763 |
18.064 |
0.797 |
-0.738 |
-1.127 |
0.695 |
-0.27 |
3.173 |
0.725 |
|
| 2021-07-08 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.813 |
14.871 |
|
1.666 |
0.171 |
-5.028 |
-1.484 |
-3.279 |
-0.157 |
-1.251 |
-12.319 |
0.854 |
-0.651 |
-9.971 |
0.614 |
-0.303 |
-0.953 |
0.774 |
|
| 2021-07-07 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.688 |
-39.508 |
|
1.371 |
2.378 |
-2.649 |
-0.548 |
-1.835 |
0.106 |
-0.07 |
-22.393 |
0.802 |
0.059 |
-6.754 |
0.973 |
-0.218 |
-5.904 |
0.571 |
|
| 2021-07-06 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.548 |
-5.277 |
|
0.993 |
2.241 |
-0.63 |
0.149 |
-0.344 |
1.426 |
0.433 |
9.623 |
1.322 |
0.329 |
6.625 |
0.966 |
0.08 |
7.806 |
0.93 |
|
| 2021-07-05 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.318 |
24.524 |
|
2.193 |
4.84 |
-2.171 |
-0.211 |
-1.356 |
2.137 |
0.219 |
12.575 |
1.188 |
-0.317 |
5.088 |
0.844 |
-0.212 |
11.716 |
0.788 |
|
| 2021-07-02 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.121 |
0.627 |
|
3.468 |
8.769 |
-5.97 |
0.14 |
0 |
0.597 |
-0.634 |
-4.63 |
1.974 |
-0.155 |
6.594 |
1.766 |
-0.03 |
14.308 |
0.847 |
|
| 2021-07-01 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.389 |
-9.887 |
|
1.746 |
0.28 |
-4.573 |
-0.509 |
-2.675 |
0 |
-0.293 |
9.577 |
1.098 |
-0.5 |
11.143 |
0.684 |
0.15 |
15.034 |
0.89 |
|
| 2021-06-30 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.804 |
29.041 |
|
2.371 |
7.434 |
-2.52 |
0 |
-0.149 |
1.376 |
-0.055 |
21.659 |
1.136 |
0.373 |
26.933 |
1.537 |
0.173 |
14.528 |
0.747 |
|
| 2021-06-29 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-0.913 |
14.276 |
|
1.489 |
2.168 |
-2.504 |
-1.042 |
-2.163 |
-0.211 |
0.157 |
25.879 |
2.195 |
0.445 |
18.672 |
1.612 |
0.165 |
12.791 |
1.275 |
|
| 2021-06-28 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.227 |
37.481 |
|
3.429 |
9.354 |
-1.457 |
0.047 |
-0.518 |
0.502 |
1.124 |
20.87 |
1.969 |
0.325 |
9.774 |
0.941 |
0.988 |
12.42 |
1.125 |
|
| 2021-06-25 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
1.02 |
4.259 |
|
1.017 |
2.707 |
-0.687 |
0.707 |
0.292 |
1.759 |
-0.126 |
-4.08 |
1.134 |
0.171 |
4.066 |
1.113 |
0.462 |
4.066 |
0.92 |
|
| 2021-06-24 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
-1.273 |
-12.418 |
|
2.594 |
1.512 |
-8.654 |
-0.206 |
-2.439 |
0.146 |
-0.253 |
3.969 |
1.59 |
0.897 |
3.969 |
0.903 |
0.069 |
3.969 |
0.984 |
|
| 2021-06-23 |
|
r2_GaNパワー半導体 C10 |
GaNパワー半導体 C10 |
|
13 |
0.766 |
20.357 |
|
3.731 |
11.765 |
-2.196 |
-0.17 |
-1.502 |
0.798 |
1.982 |
20.357 |
1.759 |
0.854 |
20.357 |
2.059 |
0.384 |
20.357 |
1.539 |
|